BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
MPN: BSC010NE2LSIATMA1 ✓ Hoạt độngBSC010NE2LSIATMA1 Tóm tắt
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used as a low-side or high-side switch in DC-DC converters, motor drivers, and load protection circuits. The OptiMOS family is Infineon's optimized trench MOSFET platform for synchronous rectification, OR-ing, and hot-swap applications. As a discrete power semiconductor, it sits below MOSFET driver ICs and above protection/passive components in the power-tree hierarchy, making it a foundational block in synchronous buck, buck-boost, and half-bridge topologies.
Key features include very low on-state resistance, low gate charge, and a logic-level compatible VGS(th) that allows direct drive from 3.3 V or 5 V microcontrollers. The PG-TDSON-8-7 package combines a small footprint with a large exposed pad, reducing RthJA and enabling high continuous current handling in space-constrained designs. The TDSON-8 pinout (Gate, Drain, Source, Drain, Drain, Drain, Drain, Drain) is the de facto standard for low-voltage high-current MOSFETs, allowing layout reuse across generations.
In synchronous rectification in 12 V-input buck converters, the BSC010NE2LSIATMA1 acts as the low-side switch. Its low Rds(on) minimizes conduction loss, and the small Qg supports sub-ns switching transitions, raising light-load efficiency. The 25 V VDS rating provides adequate margin above nominal 12 V rails, accommodating transient spikes from inductive parasitics. This part is widely used as the synchronous FET in point-of-load regulators, GPU/CPU VRMs, hot-swap controllers, and battery management switching stages.
When designing with this MOSFET, place the gate-drive loop (gate driver to gate-to-source) as short as possible to limit ringing. Use 1-2 nF of gate-source pull-down to prevent unintended turn-on, and ensure the exposed pad is soldered to a sufficiently large copper pour to dissipate up to 96 W peak power. Following the manufacturer typical-application reference designs and gate-drive recommendations is critical to fully realize the efficiency advantage of OptiMOS technology.
Bộ thay thế dễ dàng lắp đặt cho BSC010NE2LSIATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC010NE2LSIATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Operating Temperature Range, MSL Level, Continuous Drain Current (ID) at Ta.
BSC0906NSATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC0901NSATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC0902NSIATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC014N04LSIATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC094N06LS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC047N08NS3GATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC010NE2LSIATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series / Family | OptiMOS 25V |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) at TA | 38 A |
| Continuous Drain Current (ID) at TC | 100 A |
| Power Dissipation (PD) at TA | 2.5 W |
| Power Dissipation (PD) at TC | 96 W |
| Hộp | PG-TDSON-8-7 (TDSON-8 EP) |
| Kiểu lắp đặt | Surface Mount |
| Configuration | Single N-Channel |
| Technology | OptiMOS (Trench) |
| Khoảng nhiệt độ hoạt động | -55C to +150C (TJ) |
| Số chân | 8 |
| Trạng thái RoHS | Compliant |
| Gate Drive | Logic-level compatible |
Cấu hình chân BSC010NE2LSIATMA1
| Chân 1 | Gate — MOSFET gate input |
| Chân 2 | Drain — Drain connection (also exposed pad) |
| Chân 3 | Drain — Drain connection |
| Chân 4 | Drain — Drain connection |
| Chân 5 | Drain (Exposed Pad) — Drain and thermal pad - solder to PCB copper pour |
| Chân 6 | Drain — Drain connection |
| Chân 7 | Drain — Drain connection |
| Chân 8 | Source — MOSFET source |
Khu vực hoạt động an toàn (DC, TC=25C)
Ứng dụng tiêu biểu
BSC010NE2LSIATMA1 phù hợp cho 6 Áp dụngs: 12V Point-of-Load (POL) Synchronous Rectification, Hot-Swap and OR-ing in 12V Power Distribution, CPU/GPU VRM Low-Side Switch, Battery Management System (BMS) Discharge Path, DC Motor Drive and Solenoid Switching, Automotive 12V Load Switching.
12V Point-of-Load (POL) Synchronous Rectification
The BSC010NE2LSIATMA1 is widely used as the low-side synchronous FET in 12 V-input buck converters for server, telecom, and computing point-of-load rails. Its 25 V VDS rating provides safe margin above a nominal 12 V bus with transients, and the very low Rds(on) minimizes conduction loss to keep efficiency above 95% at full load. Placed on the low side of a buck topology, it complements a high-side control FET; the TDSON-8 exposed pad allows high continuous current without external heatsinking when board copper is sized appropriately.
Được đề xuất
Hot-Swap and OR-ing in 12V Power Distribution
In hot-swap controllers and OR-ing FETs for redundant 12 V power distribution, the BSC010NE2LSIATMA1 acts as the in-line switch that connects or isolates a live bus. Its 100 A TC current rating handles inrush and short-circuit transients, and the 25 V VDS gives margin for inductive kickback during fault events. The TDSON-8 footprint allows compact PCB layouts in blade servers and telecom equipment where board area is at a premium.
Được đề xuất
CPU/GPU VRM Low-Side Switch
Motherboard voltage regulator modules (VRMs) for CPUs and GPUs use the BSC010NE2LSIATMA1 as the synchronous low-side MOSFET in multi-phase buck converters. The part's low Qg supports sub-50 ns switching transitions, enabling multi-MHz operation without excessive switching loss. The exposed thermal pad spreads heat from the die to inner copper layers, which is critical in space-constrained VRM layouts where forced-air cooling is limited.
Được đề xuất
Battery Management System (BMS) Discharge Path
In lithium-ion battery packs, the BSC010NE2LSIATMA1 can be used as the discharge-path FET in 12 V nominal battery systems, where its low Rds(on) minimizes I^2R loss during high-current discharge. The 25 V VDS comfortably exceeds the maximum pack voltage of a 3S or 4S Li-ion stack. Infineon's OptiMOS trench technology provides avalanche ruggedness, which protects the FET during abnormal load-dump events common in automotive and e-mobility battery systems.
Được đề xuất
DC Motor Drive and Solenoid Switching
Industrial DC motor drives, solenoid drivers, and relay replacements use the BSC010NE2LSIATMA1 as a low-side switch because its 100 A TC current capability handles motor inrush, and the 25 V VDS covers 12-24 V brushed-motor systems. The logic-level gate threshold enables direct drive from a 3.3 V or 5 V microcontroller GPIO, eliminating the need for a discrete gate driver in low-frequency switching applications.
Được đề xuất
Automotive 12V Load Switching
Body-electronics modules in automotive applications use the BSC010NE2LSIATMA1 for high-side or low-side switching of lamps, LEDs, motors, and resistive loads on the 12 V board net. While the standard part is not AEC-Q100 qualified, its electrical ruggedness and exposed-pad thermal performance make it a popular choice in non-safety automotive subsystems. For safety-critical automotive applications, AEC-Q100-qualified companions from Infineon's OptiMOS automotive line should be substituted.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC010NE2LSIATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC0906NSATMA1 | BSC0901NSATMA1 | BSC0902NSIATMA1 | BSC014N04LSIATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 | PG-TDSON-8-7 (same) | PG-TDSON-8-7 (same) | PG-TDSON-8-7 (same) | PG-TDSON-8-7 (same) |
| Drain-Source Voltage (VDS) | 25 V | 25 V (same) | 25 V (same) | 25 V (same) | 40 V (higher) |
| Technology | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 40V |
Bảo phân biệt quan trọng
- Lowest Rds(on) in Infineon's 25V OptiMOS TDSON-8 family (vsBSC0906NSATMA1)
- Optimized voltage class for 12 V bus rails (vsBSC014N04LSIATMA1)
- High continuous current capability in compact footprint (vsBSC0901NSATMA1)
Ghi chú thiết kế
Estimated: At TC=100C and PD=96 W maximum, the die-to-case thermal path is the limiting factor. Solder the exposed pad to a copper pour of at least 1 square inch on top and bottom layers stitched with thermal vias (12-16 vias, 0.3 mm drill). Without proper PCB thermal design, the part will derate significantly below the 100 A TC rating. Use 2 oz copper on outer layers for high-current applications.
Keep the gate-drive loop (gate-driver output to MOSFET gate-to-source) as small as possible - this loop should be no larger than 5-10 mm square to limit parasitic inductance. The high-current loop (input cap to high-side FET to low-side FET back to input cap) should be the smallest possible. Place the gate pull-down resistor (10-100 kOhm) directly between gate and source pins to prevent unintended turn-on during transient events.
Do not exceed 25 V VDS even briefly - avalanche breakdown will permanently damage the part. Add a TVS or snubber across drain-source if inductive kickback is expected. Verify VGS stays within +/-20 V absolute maximum; use a gate-source Zener clamp if the gate driver could overshoot. Confirm operating junction temperature stays below 150C for long-term reliability - derate by 25-30C for safety margin in continuous operation.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications choose an automotive-grade Infineon OptiMOS sibling.
