BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
MPN: BSC014N04LSIATMA1 ✓ Hoạt độngBSC014N04LSIATMA1 Tóm tắt
An N-channel MOSFET is a voltage-controlled semiconductor switch in which majority carriers are electrons flowing through an n-type channel; turning the gate on allows current to flow from drain to source, while turning the gate off blocks it. The OptiMOS 5 platform is the current-generation Infineon trench MOSFET family for sub-100 V applications, sitting within the broader taxonomy of power MOSFETs -> discrete semiconductors -> power management switches. This part belongs to the synchronous-rectifier and OR-ing sub-categories where low RDS(on) and small gate charge directly translate into higher system efficiency.
Key features include a 1.4 mOhm max RDS(on) at VGS=10 V, 96 W continuous power dissipation at Tc, and an exposed-drain pad (FL) for direct thermal coupling to the PCB copper. The TDSON-8 FL footprint is footprint-compatible with industry-standard 5x6 mm Power-SO8/SO-8FL land patterns, simplifying second-source sourcing. Typical gate charge and Miller charge values are optimized for hard-switched and soft-switched topologies operating in the 100 kHz to 1 MHz range, and the part is rated for operation across industrial temperature grades. Infineon claims roughly 15% lower RDS(on) and 31% lower figure of merit compared with prior-generation alternatives at the same silicon area.
The architecture uses a shielded-gate trench cell that minimizes Miller capacitance and gate charge while preserving a high inrush SOA. Compared with planar MOSFETs of equivalent RDS(on), the part typically delivers faster switching edges and lower output charge (Qoss), which reduces resonant-tank circulating losses in LLC and totem-pole PFC stages. The thin-wafer approach also lowers the thermal resistance from junction to case, supporting the 96 W rating on a moderately sized PCB copper pad.
Typical applications include synchronous rectification in 12 V SMPS for server, telecom, and datacom rails, OR-ing FETs in redundant power architectures, motor-drive low-side switches in 24 V industrial systems, and high-current USB-PD / e-fuse paths. The combination of low RDS(on), small package, and high pulsed-current capability also makes it attractive for battery-protection and hot-swap circuits in 1- to 4-cell Li-ion packs. Designers using this part should follow Infineon's TDSON PCB layout guideline: stitch multiple thermal vias under the exposed pad, use wide copper planes on source, and keep the gate-loop loop area minimal to control switching ringing.
Bộ thay thế dễ dàng lắp đặt cho BSC014N04LSIATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC014N04LSIATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, MSL Level, Continuous Drain Current (ID) at Ta.
BSC014N04LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC016N04LSGATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC022N04LS6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTMFS4C013N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SiRA60DP
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC014N04LSIATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A |
| Continuous Drain Current (ID, Ta) | 31 A |
| RDS(on) max at VGS=10 V | 1.4 mOhm |
| Power Dissipation (PD, Tc) | 96 W |
| Power Dissipation (PD, Ta) | 2.5 W |
| Khoảng nhiệt độ hoạt động | -55 C to +150 C |
| Hộp | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Tradename | OptiMOS |
Cấu hình chân BSC014N04LSIATMA1
| Chân 1 | Source — Source (pin 1 of 8) |
| Chân 2 | Source — Source |
| Chân 3 | Source — Source |
| Chân 4 | Gate — Gate |
| Chân 5 | Drain — Drain |
| Chân 6 | Drain — Drain |
| Chân 7 | Drain — Drain |
| Chân 8 | Drain — Drain |
Ứng dụng tiêu biểu
BSC014N04LSIATMA1 phù hợp cho 6 Áp dụngs: 12 V Synchronous Rectification in SMPS, OR-ing FET in Redundant Power Architectures, 24 V Industrial Motor-Drive Low-Side Switch, USB-PD and High-Current Hot-Swap / e-Fuse, 1- to 4-Cell Li-Ion Battery Protection FET, Telecom / Server 12 V Point-of-Load Stage.
12 V Synchronous Rectification in SMPS
The BSC014N04LSIATMA1's 40 V VDS, 1.4 mOhm max RDS(on), and low Qg make it a strong choice for the synchronous-rectifier FET in 12 V SMPS, including buck, half-bridge, and full-bridge topologies. With 96 W power handling on the case and 100 A continuous drain current at Tc, it carries the full load of high-current server, telecom, and datacom rails while keeping conduction loss low. The exposed drain pad allows direct thermal coupling to a 1+ oz inner-plane copper pour with thermal vias, sustaining 60-80 A real loads on a 4-layer board. Compared with a Schottky diode, the synchronous stage recovers 5-8 percent system efficiency at full load, which directly translates into lower heatsink cost and higher power density.
Được đề xuất
OR-ing FET in Redundant Power Architectures
In N+1 redundant 12 V power shelves, the BSC014N04LSIATMA1 functions as an OR-ing switch between a power module and the shared load bus. Its 1.4 mOhm RDS(on) keeps conduction loss under 7 W at 70 A continuous, well within the thermal envelope of the TDSON-8 FL package on a 2-oz copper pad. The fast turn-off capability of OptiMOS 5 minimizes reverse-current let-through during fault isolation, protecting upstream converters from back-feed. The PG-TDSON-8 FL footprint is footprint-compatible with industry-standard Power-SO8 parts, simplifying second sourcing.
Được đề xuất
24 V Industrial Motor-Drive Low-Side Switch
The BSC014N04LSIATMA1 acts as the low-side switch in 24 V brushless-DC and stepper-driver half-bridges for industrial automation. The 40 V VDS rating provides 60 percent headroom over a 24 V nominal bus, tolerating load-dump transients without avalanche. Its 100 A pulsed-current capability supports motor in-rush and stall-current events, while the small TDSON footprint allows compact multi-axis driver layouts. The exposed drain pad ties directly to a copper heatsink plane, sustaining continuous 30-40 A switching with no airflow.
Được đề xuất
USB-PD and High-Current Hot-Swap / e-Fuse
The BSC014N04LSIATMA1 is well suited to USB-Power-Delivery and e-fuse roles that demand high inrush and low conduction loss. In a 20 V / 5 A Type-C port, the 40 V VDS rating covers PD's 20 V negotiated bus, and the 1.4 mOhm RDS(on) holds full-load dissipation under 0.5 W. The fast body-diode reverse recovery of OptiMOS 5 limits ringing during hot-insertion events, improving EMI margin and reducing the need for snubbers. The TDSON-8 FL land pattern fits inside a Type-C connector keep-out.
Được đề xuất
1- to 4-Cell Li-Ion Battery Protection FET
The BSC014N04LSIATMA1 can be paired back-to-back as the protection switch in 1- to 4-cell Li-ion battery packs. The 40 V VDS rating easily handles the 16.8 V maximum charge voltage of a 4S pack, and the 1.4 mOhm RDS(on) on each side keeps total discharge-path resistance under 3 mOhm. The TDSON-8 FL package accommodates two dice on a small footprint, saving PCB space in pack designs. The part's industrial temperature grade supports -40 C to +85 C operation typical of consumer and light-industrial packs.
Được đề xuất
Telecom / Server 12 V Point-of-Load Stage
In 48 V-to-12 V intermediate-bus converters feeding downstream POL regulators, the BSC014N04LSIATMA1 can serve as the secondary-side synchronous rectifier in isolated topologies like half-bridge and full-bridge converters. The 40 V VDS comfortably covers the 12 V rail plus reflected-reset transients, and the 1.4 mOhm RDS(on) combined with low Qg keeps peak efficiency above 96 percent at 200-300 kHz switching. The exposed drain pad enables direct heatsink attachment or copper-pour cooling on densely packed server boards.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC014N04LSIATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC014N04LSATMA1 | BSC016N04LSGATMA1 | BSC022N04LS6ATMA1 | NTMFS4C013N | SiRA60DP |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | SO-8FL / Power-SO8 (5x6 mm) - same land pattern | PowerPAK SO-8 (5x6 mm) - same land pattern |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 1.4 mOhm | 1.4 mOhm | 1.6 mOhm | 2.2 mOhm | 1.3 mOhm | 1.5 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi trench | Vishay TrenchFET |
Bảo phân biệt quan trọng
- Industry-leading RDS(on) x Qg figure of merit (vsBSC026N04LSATMA1)
- Lower RDS(on) than cross-brand Power-SO8 alternatives (vsSiRA60DP)
- Industrial temperature grade in the same family (vsBSC014N04LSATMA1)
Ghi chú thiết kế
Estimated: at continuous 60 A with RDS(on) = 1.4 mOhm (after Tj rise derate to ~1.7 mOhm at 100 C), conduction loss is roughly 6 W. On a 4-layer 1-oz inner copper pad with 12 thermal vias (0.3 mm drill, 1 oz plating), RthJA drops to ~30-40 C/W; this yields a Tj rise of 180-240 C above 25 C ambient, exceeding the 150 C rating. Reduce continuous load to 35-45 A or attach a small heatsink to the drain pad. Always derate against the manufacturer's RthJC and copper-pad recommendation rather than the datasheet Ta=25 C number.
Use a wide, uninterrupted source copper pour on the top layer to minimize common-source inductance, which otherwise couples di/dt into the gate loop and causes ringing/miller-induced shoot-through. Place the gate-driver within 5 mm of the gate pin and use a 10 ohm gate resistor to control edge rates. Stitch the exposed drain pad with an array of thermal vias (12-20 vias, 0.3 mm finished) connecting to a 2 oz inner copper plane; this provides both thermal relief and a low-impedance return for switching currents.
Do not drive the gate above the absolute-maximum VGS rating (typically +/-20 V for OptiMOS 5) without a gate-source Zener or TVS clamp - ringing from the gate-drive loop can otherwise punch through the oxide. Ensure VDS stays below the 40 V rating during turn-off spikes; a 50 V TVS or RC snubber across the drain-source is recommended when driving highly inductive loads. Confirm pulsed drain current (IDM) rating for inrush events before relying on the 100 A Tc continuous figure for short-duration peaks.
For switching frequencies above 200 kHz, the gate-loop parasitic resonance can excite miller-induced turn-on of the complementary FET in a half-bridge. Mitigate this by adding a 4.7 kohm gate-to-source resistor on each FET (placed close to the gate pin) and using a gate-drive supply that is well bypassed at the IC. For very high dV/dt applications, consider a Ferrite bead in series with the gate to damp the resonance without slowing switching too much.
Thông tin tuân thủ
RoHS and halogen-free per Infineon product page. Industrial temperature grade (-55 C to +150 C). Not AEC-Q100 qualified; for automotive, contact Infineon about the equivalent automotive OptiMOS 5 part.
