BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
MPN: BSC019N04NSGATMA1 ✓ Hoạt độngBSC019N04NSGATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled three-terminal semiconductor switch in which the drain-source channel conducts electrons when a positive gate-source voltage is applied above the threshold. MOSFETs occupy a key place in the discrete-semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. The 'N-channel' designation means majority carriers are electrons, yielding lower on-resistance and faster switching than equivalent P-channel parts. OptiMOS is Infineon's brand name for its 30V-300V trench power-MOSFET families, used in synchronous rectification, DC-DC conversion, and hot-swap circuits.
Key features of the BSC019N04NSGATMA1 include 1.9 mΩ typical RDS(on) at VGS = 10 V, 100 A continuous ID at TC = 25 °C, and a 40 V drain-source breakdown voltage suitable for 12 V and 24 V bus systems. The PG-TDSON-8-1 package features a large exposed drain pad that doubles as the electrical drain terminal and a thermal pathway, with RθJA in the 50 °C/W range for properly laid-out boards. Gate charge is optimized for high-frequency switching, typically under 100 nC total Qg, enabling compact, high-efficiency synchronous buck and buck-boost converters.
The part is particularly suited for OR-ing, hot-swap, and e-fuse roles on 12 V telecom and server rails where low conduction loss dominates thermal budget. Its 40 V rating also gives ample headroom for 19 V notebook adapters and 24 V industrial supplies. In synchronous rectification it replaces Schottky diodes in point-of-load converters above 30 A, cutting rectifier losses by roughly half. Designers should bias the gate at 10 V for lowest RDS(on) and derate to 6 V or 4.5 V curves when logic-level compatibility is required.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS family and approved cross-brand equivalents, and practical PCB/thermal design notes not found in the bare datasheet.
Bộ thay thế dễ dàng lắp đặt cho BSC019N04NSGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC019N04NSGATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Continuous Drain Current (ID) at Ta, MSL Level.
BSC014N04LSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC014N04LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC022N04LS6ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC0906NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0901NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N04NSGATMA1 Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | N-Channel MOSFET |
| Technology | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Continuous Drain Current (ID) at TA=25C | 30 A |
| RDS(on) max at VGS=10V | 2.5 mΩ |
| RDS(on) typ at VGS=10V | 1.9 mΩ |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| Power Dissipation (PD) at TC=25C | 125 W |
| Khoảng nhiệt độ hoạt động | -55C to +150C |
| Hộp | PG-TDSON-8-1 (TDSON-8 FL) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
Cấu hình chân BSC019N04NSGATMA1
| Chân 1 | Source — Source terminal (connected to exposed pad via lead frame) |
| Chân 2 | Source — Source terminal |
| Chân 3 | Source — Source terminal |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Source — Source terminal |
| Chân 6 | Source — Source terminal |
| Chân 7 | Source — Source terminal |
| Chân 8 | Source — Source terminal |
| Chân PAD | Drain — Drain terminal (exposed thermal pad on underside) |
Khu vực hoạt động an toàn - DC
Ứng dụng tiêu biểu
BSC019N04NSGATMA1 phù hợp cho 6 Áp dụngs: 12V Hot-Swap and E-Fuse, Synchronous Rectification in DC-DC Converters, OR-ing Diode Replacement in Redundant Power, Battery Protection and Load Switch in Power Tools, Motor Drive and H-Bridge (Low-Side Switch), Automotive 12V Load Switching.
12V Hot-Swap and E-Fuse
The BSC019N04NSGATMA1's 1.9 mΩ typical RDS(on) and 40 V VDS rating make it an ideal pass-element for 12 V hot-swap controllers in server backplanes and telecom equipment. With 100 A continuous ID at TC=25C, it can sustain steady-state loads of 60-80 A on a properly laid-out 4-layer PCB without exceeding thermal limits. The exposed drain pad provides a low thermal-impedance path (~50 °C/W on 1 oz copper) for inrush energy dissipation during hot-insertion events.
Được đề xuất
Synchronous Rectification in DC-DC Converters
Used as the low-side synchronous FET in 12 V-input buck converters above 30 A, the BSC019N04NSGATMA1 replaces Schottky diodes and roughly halves rectification loss because its 1.9 mΩ RDS(on) at VGS=10V produces less voltage drop than a 30 A Schottky at typical operating currents. The 40 V rating gives ample margin above 12 V plus transients, and the OptiMOS gate charge is tuned for sub-100 nC total Qg, enabling 300-500 kHz switching frequencies in point-of-load converters.
Được đề xuất
OR-ing Diode Replacement in Redundant Power
In redundant 12 V server and telecom power architectures, the BSC019N04NSGATMA1 replaces Schottky OR-ing diodes with a MOSFET that drops only ~190 mV at 100 A versus ~500 mV for a Schottky. This eliminates several watts of dissipation per feed and removes heatsinks. The part's 100 A continuous rating easily handles N+1 redundant load currents of 40-60 A per feed. Its low gate charge enables fast disconnect during fault events when driven by a dedicated OR-ing controller.
Được đề xuất
Battery Protection and Load Switch in Power Tools
Cordless power tools running on 18-20 V battery packs (10S Li-ion nominal 36 V max) require low-loss disconnect switches, and the BSC019N04NSGATMA1's 1.9 mΩ RDS(on) at VGS=10V provides the lowest conduction loss in its class. At 30 A continuous drain current on a 1 oz copper board, the part can handle peak motor currents of 80-100 A for short bursts. The PG-TDSON-8-1 package withstands the mechanical vibration typical of handheld tools when the drain pad is properly soldered to the board.
Được đề xuất
Motor Drive and H-Bridge (Low-Side Switch)
In 24 V brushed-DC motor H-bridges, the BSC019N04NSGATMA1 serves as the low-side switch, leveraging its 40 V VDS and 1.9 mΩ RDS(on) to minimize conduction loss during PWM operation. The 125 W power dissipation at TC=25C supports continuous currents up to 30 A on a small heatsink. The low gate charge permits 20-50 kHz PWM frequencies for smooth torque control without excessive switching loss.
Được đề xuất
Automotive 12V Load Switching
Automotive 12 V body controllers and ECU outputs need robust, low-loss switches. The BSC019N04NSGATMA1's 40 V VDS accommodates 12 V crank and load-dump transients up to ~35 V, and its 1.9 mΩ RDS(on) minimizes thermal rise when driving lamps, solenoids, or motor loads. Although not AEC-Q101 qualified, it is widely used in non-safety automotive applications; for AEC-Q101 drop-in parts see Infineon's automotive-grade OptiMOS siblings in the same PG-TDSON-8-1 footprint.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC019N04NSGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC014N04LSIATMA1 | BSC014N04LSATMA1 | BSC0906NSATMA1 | BSC022N04LS6ATMA1 | BSC0902NSIATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-1 | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 60 V | 40 V | 60 V |
| RDS(on) typ at VGS=10V | 1.9 mΩ | 1.4 mΩ | 1.4 mΩ | ~9 mΩ | 2.2 mΩ | ~10 mΩ |
| Power Dissipation (TC=25C) | 125 W | 125 W | 125 W | 125 W | 125 W | 125 W |
| Operating Temperature Range | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
| Unit Price (qty 1, USD) | 0.91 | 1.05 | 1.05 | 0.95 | 0.78 | 0.85 |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Lowest RDS(on) in 40V OptiMOS family (vsBSC022N04LS6ATMA1)
- 40 V rating suits 12 V / 19 V applications with adequate transient margin (vsBSC0906NSATMA1)
- Pin-compatible upgrade path within same family (vsBSC014N04LSIATMA1)
Ghi chú thiết kế
Estimated: at ID = 60 A continuous and RDS(on) = 2.5 mΩ max, the BSC019N04NSGATMA1 dissipates roughly 9 W (60² × 0.0025). With a 4-layer PCB and 1 sq-inch copper pour under the exposed pad, RθJA is approximately 50 °C/W, yielding a junction temperature rise of 70 °C above ambient. For full 100 A operation, mount the device to a heatsink or use at least 4 sq-inch of 2 oz copper on top and bottom layers.
The PG-TDSON-8-1 package's exposed pad is the primary drain connection AND the dominant thermal path. Use at least 8 thermal vias (0.3 mm drill, 1 oz copper plating) directly under the pad connecting top, inner, and bottom copper layers. Inadequate via count is the single most common cause of thermal failure in PG-TDSON designs, typically raising RθJA by 30-50% versus a properly via-stitched layout.
Do not drive the gate above the absolute maximum VGS of ±20 V - typical gate-source failure occurs at 25 V due to oxide rupture. Use a gate-source Zener (15-18 V) for protection if the gate driver can overshoot. Also, never operate in linear mode for sustained periods - the SOA curve drops to ~3 A at 40 V VDS, so PWM switching only. For inrush limiting, ramp VGS with an RC network to stay within SOA.
Keep the gate-drive loop (gate-driver output -> gate -> source -> gate-driver ground return) area under 1 sq-cm to minimize parasitic inductance and prevent oscillations. Place a 10 Ω gate resistor within 5 mm of the gate pin to damp ringing. The high-current source loop (drain -> load -> source -> input cap) should be a wide, short copper pour, ideally on the top layer to minimize stray inductance that would otherwise create VDS overshoot during turn-off.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, refer to Infineon automotive-grade OptiMOS siblings. Lead-free and halogen-free reflow-compatible per JEDEC J-STD-020.
