BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon
MPN: BSS127H6327XTSA2 ✓ Hoạt độngBSS127H6327XTSA2 Tóm tắt
A small-signal MOSFET is a metal-oxide-semiconductor field-effect transistor scaled for low-current switching and analog signal conditioning, occupying the boundary between discrete discrete semiconductors and power-management ICs. SIPMOS (Siemens/Infineon Power MOS) is Infineon's planar vertical-DMOS process family optimized for high breakdown voltage and fast switching in compact surface-mount packages. Within the broader taxonomy, the BSS127 sits at: N-channel MOSFET -> small-signal MOSFET -> discrete semiconductor -> power semiconductor, serving as a building block in low-current high-voltage analog front ends.
The BSS127's 600 V drain-source breakdown and 4.5 V VGS(th) make it ideal for direct microcontroller or 5 V logic interface in solid-state relay (SSR) front-ends, high-side bootstrap drivers, and line-side voltage clamps. Its SIPMOS construction provides a low Crss/Ciss ratio that simplifies gate-drive timing and minimizes shoot-through losses in half-bridge or totem-pole stages. The 21 mA continuous current rating suits signal-level loads such as optocouplers, low-power relays, and piezo transducers, while the 500 mW power rating limits pulsed dissipation to short-duration switching events.
Typical applications include solid-state relay (SSR) input/output stages, high-voltage signal multiplexing, line-voltage interface circuits in white goods and industrial controls, automotive sensor interfaces, and as a low-side switch in flyback or buck converter housekeeping blocks. The AEC-Q101 automotive qualification supports deployment under-the-hood and in body-electronics modules operating across -40 C to +150 C junction temperature.
When designing with the BSS127, gate-source protection with a 10 kohm pull-down resistor is recommended to prevent inadvertent turn-on from dv/dt coupling. Total gate charge Qg should be sourced from a sufficiently stiff driver to keep switching losses bounded; consult the manufacturer's datasheet for the typical application circuit and thermal derating curves.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho BSS127H6327XTSA2 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSS127H6327XTSA2 (cùng hình factor và footprint) — khác nhau ở Package, FET Type, Operating Temperature Range, Technology, MSL Level.
BSS127S-7
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSS87H6327FTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSS123IXTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSS192PH6327FTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSL308CH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSD235CH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSS127H6327XTSA2 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 21 mA (Ta) |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | 500 mW (Ta) |
| Nhiệt độ mối nối hoạt động | -55 C to +150 C |
| Hộp | SOT-23-3 (PG-SOT23) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 3 |
| dv/dt Rated | Yes |
| Automotive Qualification | AEC-Q101 |
| Trạng thái RoHS | Compliant (lead-free) |
| Đông trùng haogen | Yes, per IEC 61249-2-21 |
Cấu hình chân BSS127H6327XTSA2
| Chân 1 | GATE — Gate input (logic-level, 4.5 V threshold) |
| Chân 2 | SOURCE — Source terminal (connected to ground in low-side switch) |
| Chân 3 | DRAIN — Drain terminal (high-voltage node, up to 600 V) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSS127H6327XTSA2 phù hợp cho 6 Áp dụngs: Solid-State Relay (SSR) Front-End, High-Voltage Line-Side Interface, Automotive Sensor Interface Module, Piezo Transducer Driver, Household Appliance Control Board, Industrial Control Signal Multiplexer.
Solid-State Relay (SSR) Front-End
The BSS127H6327XTSA2's 600 V drain-source breakdown and 4.5 V logic-level gate threshold make it ideal for the input stage of solid-state relays switching rectified 230 V AC or 400 V DC loads. Its 21 mA continuous drain current drives optocoupler LED inputs or low-power trigger circuits without external current limiting, while the dv/dt ruggedness rating prevents false triggering from line transients. Place the BSS127 between the line voltage and the gate driver network; a 10 kohm gate-source pull-down resistor prevents inadvertent turn-on during MCU reset. Compared to a 600 V bipolar transistor front-end, the BSS127's near-zero input current simplifies the microcontroller side and removes the need for a base-current limiting resistor.
Được đề xuất
High-Voltage Line-Side Interface
The BSS127H6327XTSA2 serves as a robust interface between low-voltage microcontroller GPIO and line-voltage (110 V AC to 240 V AC) signal conditioning networks. Its 600 V VDS rating withstands rectified line transients, and the 4.5 V VGS(th) allows direct MCU drive without a level shifter. Use it as a high-side bleed switch to discharge X-capacitor safety bleeder resistors when AC is disconnected, or as a low-side clamp in zero-cross detection circuits. Compared to a discrete 600 V BJT front-end, the BSS127's voltage-controlled gate eliminates base-current draw and improves switching symmetry across the AC cycle.
Được đề xuất
Automotive Sensor Interface Module
The BSS127H6327XTSA2's AEC-Q101 qualification makes it suitable for automotive sensor interfaces, body-electronics modules, and HVAC controls operating across -40 C to +150 C junction temperature. Its 21 mA ID rating drives sensor excitation currents for thermistor or hall-effect signal conditioning, while the 600 V VDS provides ample margin for 12 V/24 V automotive load-dump transients. Pair the BSS127 with a 5 V MCU GPIO for direct gate drive in sensor multiplexing or low-side switch positions. Compared to non-automotive-qualified SOT-23 MOSFETs, the BSS127H6327XTSA2 delivers proven reliability under H3TRB and temperature-cycle stress per AEC-Q101.
Được đề xuất
Piezo Transducer Driver
The BSS127H6327XTSA2's high VDS rating and small SOT-23 package suit piezo transducer and buzzer driver circuits in industrial control panels and consumer appliances. Its 21 mA continuous current drives low-power piezo elements for audible feedback, while the 600 V breakdown supports piezo transformers in CCFL backlight or ozone-generator applications. Drive the gate from a 5 V logic output through a 1 kohm series resistor to limit ringing from piezo capacitance. Compared to a 600 V BJT driver, the BSS127's voltage-controlled gate enables cleaner switching edges and lower harmonic distortion in audio-frequency piezo applications.
Được đề xuất
Household Appliance Control Board
The BSS127H6327XTSA2 fits white-goods and household appliance control boards as a low-current signal switch for relay coil drivers, status LEDs, and user-interface sense lines. Its 600 V VDS withstands inductive kickback from 12 V or 24 V relay coils when properly clamped, while the logic-level gate drives directly from appliance microcontroller GPIO. Use it as a low-side switch for relay coils or as a high-side enable for optoisolated triac drivers. Compared to electromechanical relays in the same role, the BSS127 eliminates coil inrush current and provides silent, arc-free switching for appliance user-interface circuits.
Được đề xuất
Industrial Control Signal Multiplexer
The BSS127H6327XTSA2 acts as an analog signal multiplexer switch in industrial process-control and PLC input modules, where its 600 V VDS and 21 mA ID rating handle 4-20 mA current loops and 0-10 V analog signals with margin. Its low on-state resistance of 500 ohm typical introduces minimal insertion loss for low-level analog signals, while the small SOT-23 package enables high-channel-density multiplexer designs on compact PLC cards. Pair the BSS127 with a precision op-amp buffer to build a 4-channel or 8-channel analog input multiplexer. Compared to electromechanical reed relays, the BSS127 delivers faster switching, longer operational life, and lower power consumption in continuous-operation industrial applications.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSS127H6327XTSA2 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSS127S-7 | BSS87H6327FTSA1 | BSS123IXTSA1 |
|---|---|---|---|---|
| Brand | Infineon | Diodes Incorporated | Infineon | Infineon |
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
Bảo phân biệt quan trọng
- Highest VDS rating in SOT-23-3 logic-level class (vsBSS87H6327FTSA1)
- AEC-Q101 automotive qualification at lowest unit price (vsBSS127S-7)
- Logic-level VGS(th) compatible with 5V MCU direct drive (vsBSS123IXTSA1)
Ghi chú thiết kế
Mount the BSS127H6327XTSA2 with the SOT-23 tab connected to the drain (pin 3). For 600 V applications, maintain a minimum creepage distance of 1.5 mm between drain pad and any low-voltage trace to comply with IEC 60950 / IEC 62368 clearance requirements. The SOT-23 thermal pad should be soldered to a small copper pour (>= 25 mm^2) to limit junction temperature rise at the 21 mA continuous rating; at 500 mW Ptot and theta_JA of approximately 320 C/W on a 1 oz copper FR-4 board, the junction rises about 80 C above ambient at full load, leaving headroom to 150 C Tj max.
The BSS127H6327XTSA2 is a small-signal MOSFET rated at 21 mA, not a power MOSFET - do not use it as a load switch for currents above ~50 mA pulsed or 21 mA continuous. Exceeding the SOA curve causes thermal runaway and device failure. For load switching above 0.5 A, choose a dedicated power MOSFET such as the BSZ070N08LS5ATMA1 or BSC0906NSATMA1 instead. The 600 V VDS rating is intended for high-voltage signal conditioning, not power conversion - verify SOA at your specific VDS/ID combination before deployment.
Place a 10 kohm gate-source pull-down resistor as close as possible to the gate pin to prevent dv/dt-induced turn-on during fast drain-voltage transitions. Keep the gate trace short (< 5 mm) and route it away from the drain node to minimize parasitic feedback capacitance. For SSR applications, add a small ferrite bead or 100 ohm resistor in series with the gate to dampen ringing from the optocoupler capacitance. Refer to Infineon application note 'SIPMOS Small-Signal MOSFETs in SSR Circuits' for reference layout patterns.
Estimated: At a 600 V drain transition with 5 ns rise time, the Miller capacitance Crss of approximately 1.5 pF injects a gate-voltage spike of about VGS_spike = VDS_dvdt * Crss / Ciss. With Ciss around 30 pF and dv/dt of 120 V/ns, the spike reaches about 6 V - above the 4.5 V threshold and potentially causing shoot-through. Add a gate-source capacitor (1 nF ceramic) to slow the turn-on edge to > 50 ns, suppressing dv/dt-induced turn-on without significantly increasing switching loss.
Thông tin tuân thủ
100% lead-free per Infineon datasheet. Halogen-free per IEC 61249-2-21. AEC-Q101 automotive qualified (note: AEC-Q101, not AEC-Q100; both are automotive reliability standards for discrete semiconductors and ICs respectively). dv/dt rated. RoHS and REACH compliant.
