IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IAUC41N06S5L100ATMA1 ✓ Hoạt độngIAUC41N06S5L100ATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. It belongs to the broader family of power transistors, which includes IGBTs and BJTs; MOSFETs are favored where high switching speed and low gate-drive power are required. Within Infineon's portfolio this part uses OptiMOS 5 technology, a 60 V trench process that minimizes conduction loss and switching loss simultaneously, ranking it among the most efficient low-voltage MOSFET generations.
Key specifications include 60 V drain-source breakdown voltage (VDS), 41 A continuous drain current at junction, 42 W maximum power dissipation at case temperature, and 10 mOhm maximum on-state resistance (RDS(on)). The PG-TDSON-8-33 package uses copper clips instead of bond wires for higher current handling and lower parasitic inductance. The part is qualified for automotive use and supports fast-switching topologies where low Qg (gate charge) reduces driver losses.
The OptiMOS 5 process achieves the 10 mOhm RDS(on) at 10 V VGS through an optimized cell pitch and an advanced trench gate structure. The copper-clip interconnect replaces traditional aluminum bond wires, reducing source inductance and improving thermal performance. Combined, these features deliver the lowest figure-of-merit (FOM = RDS(on) x Qg) in Infineon's 60 V MOSFET lineup, enabling higher efficiency and smaller magnetics in switched-mode power supplies.
Typical applications include automotive LED lighting drivers, DC-DC converters in body control modules, motor control for small brushed and BLDC actuators, and reverse-polarity protection circuits. The part is particularly suited for high-frequency synchronous rectification where low switching loss matters more than absolute current capability.
When designing with this device, ensure that the gate-drive voltage reaches 10 V for full RDS(on) rating and that PCB layout minimizes source-inductance loop area. Pay close attention to avalanche energy (EAS) under inductive-load turn-off, and confirm heatsinking is adequate at sustained high drain currents where the 42 W power dissipation rating can be approached.
Bộ thay thế dễ dàng lắp đặt cho IAUC41N06S5L100ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC41N06S5L100ATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Operating Temperature Range, FET Type, Drain-Source Voltage (VDS).
IAUC41N06S5L100
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPG20N06S4L14AATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN10S7N021ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N04NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSP316PH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD90N06S407ATMA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC41N06S5L100ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tj) | 41 A |
| Power Dissipation (PD, TC) | 42 W |
| On-State Resistance (RDS(on)) max | 10 mOhm at VGS=10 V |
| Khoảng nhiệt độ hoạt động | -55C to +175C |
| Hộp | PG-TDSON-8-33 (TDSON-8, 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Channel Type | N-Channel |
| Automotive Qualified | Yes (AEC-Q101 automotive grade) |
| Trạng thái RoHS | Compliant |
| Interconnect | Copper clip (low-inductance) |
Cấu hình chân IAUC41N06S5L100ATMA1
| Chân 1 | Gate — MOSFET gate drive input |
| Chân 2 | Source — Source (connected to exposed pad) |
| Chân 3 | Source — Source (connected to exposed pad) |
| Chân 4 | Source — Source (connected to exposed pad) |
| Chân 5 | Source — Source (connected to exposed pad) |
| Chân 6 | Source — Source (connected to exposed pad) |
| Chân 7 | Source — Source (connected to exposed pad) |
| Chân 8 | Drain — MOSFET drain (connected to exposed pad on some variants) |
Khu vực hoạt động an toàn - IAUC41N06S5L100ATMA1
Ứng dụng tiêu biểu
IAUC41N06S5L100ATMA1 phù hợp cho 6 Áp dụngs: Automotive LED Headlight Drivers, 12V/24V DC-DC Buck Converters, Brushed DC Motor Drive (H-Bridge), Reverse-Battery / Load-Dump Protection, Battery Management System (BMS) Protection, Power OR-ing and Hot-Swap Controllers.
Automotive LED Headlight Drivers
The IAUC41N06S5L100ATMA1's 60 V VDS, 41 A continuous current, and 10 mOhm RDS(on) make it ideal as the high-side switch in automotive LED headlight drivers and daytime running light modules. Its AEC-Q101 qualification supports body electronics and exterior lighting at 12 V or 24 V battery rails. The OptiMOS 5 process delivers low switching loss at the 100 kHz+ PWM frequencies used for dimming, while the copper-clip TDSON-8-33 package handles the inrush current that occurs at cold-start LED turn-on. Place the MOSFET with its exposed pad soldered to at least 1 sq cm of 2 oz copper to keep Tj within safe limits at full duty cycle.
Được đề xuất
12V/24V DC-DC Buck Converters
In synchronous buck converters for automotive body control modules and infotainment supplies, the IAUC41N06S5L100ATMA1 serves as the low-side synchronous rectifier with its 10 mOhm RDS(on) and copper-clip TDSON-8-33 package. The 41 A rating comfortably supports 10-15 A continuous load currents typical of POL converters. OptiMOS 5's low Qg reduces gate-driver losses at 200-500 kHz switching frequencies, and the 60 V VDS rating tolerates 24 V truck-bus transients plus inductive ringing. Use the part with a dedicated gate-driver such as 1EDB7275FXUMA1 to control switching-node dV/dt and minimize EMI.
Được đề xuất
Brushed DC Motor Drive (H-Bridge)
The IAUC41N06S5L100ATMA1 is well-suited for the low-side switches in a 4-MOSFET H-bridge driving automotive brushed DC motors such as window lifts, seat adjusters, and door-lock actuators. The 41 A continuous current supports motor inrush without thermal shutdown, and the 10 mOhm RDS(on) keeps conduction loss low across the PWM duty cycle at 20-25 kHz. The copper-clip package's low source inductance reduces voltage spikes during commutation, easing snubber requirements. For reverse-battery protection, pair with a P-channel high-side switch in a similar TDSON-8 package.
Được đề xuất
Reverse-Battery / Load-Dump Protection
Use the IAUC41N06S5L100ATMA1 as the high-side switch in reverse-battery and load-dump protection circuits for automotive ECUs. Its 60 V VDS rating tolerates load-dump transients up to ISO 7637-2 pulse 5a, while the 10 mOhm RDS(on) minimizes voltage drop on the 12 V supply rail feeding sensitive downstream ICs. The AEC-Q101 qualification meets automotive reliability requirements for body and chassis ECUs. Drive the gate from a charge-pump or bootstrap circuit referenced to the source, and add a TVS diode at the drain for clamping severe inductive transients.
Được đề xuất
Battery Management System (BMS) Protection
In 12 V lead-acid and 48 V mild-hybrid BMS protection FETs, the IAUC41N06S5L100ATMA1 functions as the charge/discharge control MOSFET. Its 41 A current rating matches typical pack-level currents for auxiliary batteries, and the 60 V VDS supports 48 V bus architectures with adequate transient margin. The OptiMOS 5 10 mOhm RDS(on) reduces I2R losses during continuous charge balancing, improving overall pack efficiency. The copper-clip TDSON-8-33 package spreads heat across the BMS PCB, enabling compact module designs without external heatsinks.
Được đề xuất
Power OR-ing and Hot-Swap Controllers
The IAUC41N06S5L100ATMA1's fast body-diode reverse recovery and 10 mOhm RDS(on) make it suitable as the OR-ing MOSFET in redundant automotive power architectures such as dual-battery or backup-supply systems. Its 60 V VDS tolerates transients on either rail during switchover events. Place two IAUC41N06S5L100ATMA1 MOSFETs back-to-back (sources tied) to block reverse current flow, then drive the gates with a comparator that detects reverse-voltage conditions. The TDSON-8-33 footprint simplifies thermal coupling to chassis ground planes in ECU enclosures.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC41N06S5L100ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC41N06S5L100 | IPG20N06S4L14AATMA1 | IAUCN10S7N021ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 100 V | 40 V |
| On-State Resistance RDS(on) max | 10 mOhm | 10 mOhm | 14 mOhm | 10 mOhm | 1.5 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS 5 | OptiMOS 5 |
| Automotive Qualified (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Bảo phân biệt quan trọng
- Lowest RDS(on) in Infineon's 60 V OptiMOS 5 TDSON-8 family (vsIPG20N06S4L14AATMA1)
- Higher VDS rating than 40 V OptiMOS 5 alternatives (vsISC015N04NM5ATMA1)
- Drop-in compatible same-brand alternative without packaging suffix (vsIAUC41N06S5L100)
Ghi chú thiết kế
Estimated: At continuous 25 A load and 10 mOhm RDS(on), the IAUC41N06S5L100ATMA1 dissipates approximately 6.25 W (P = I^2 x R). With a TDSON-8-33 thermal resistance of roughly 50 C/W on a 2 oz copper 1 sq cm pad, junction temperature rises ~313 C above ambient - far above 175 C Tj max. Practical continuous current is therefore limited to roughly 15-20 A without forced cooling or larger copper area; verify against the manufacturer's thermal curve and derate per actual PCB layout.
Solder the TDSON-8-33 exposed thermal pad directly to a continuous copper pour of at least 1 sq cm on the top layer, with thermal vias to inner ground planes for improved heat spreading. Place the gate-drive loop (gate resistor, gate-source pull-down) as close to pins 1-7 as possible to minimize parasitic inductance. Keep the switching-node copper area small to limit radiated EMI, and route the drain (pin 8) directly to the load terminal with the widest practical trace.
Do not assume TDSON-8 packages from different vendors share the same pinout: Infineon places the gate on pin 1, but some competitors assign the gate to pin 4 or pin 8 in the same 5x6 mm outline. Always re-verify the pinout against the manufacturer's datasheet before substitution. Also confirm gate-drive voltage reaches 10 V; partial enhancement at VGS=4.5 V can increase RDS(on) by 2-3x and push the part into thermal runaway.
Thông tin tuân thủ
AEC-Q101 qualified (automotive MOSFET standard, distinct from AEC-Q100 IC standard). RoHS and lead-free per Infineon product page.
