IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
MPN: IAUCN10S7L290TATMA1 ✓ Hoạt độngIAUCN10S7L290TATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used as a fast switch or amplifier in power-conversion circuits. In the broader taxonomy, a MOSFET sits below discrete transistors, below discrete semiconductors, and ultimately below power management semiconductors. N-channel enhancement-mode MOSFETs such as the IAUCN10S7L290TATMA1 are the dominant choice for low-side and high-side switches in synchronous buck converters, half-bridges, and motor drivers because they offer lower RDS(on) per unit silicon area than equivalent P-channel parts.
Key differentiating parameters include a maximum RDS(on) of 28.6 mΩ at VGS = 10 V, a maximum continuous drain current of 27 A at TC = 25 °C, a maximum power dissipation of 45 W at TC, and a top-side cooled source-down package that enables direct PCB heatsink attachment for superior thermal extraction. The OptiMOS™ 7 cell technology reduces gate charge (Qg) and output capacitance (Coss) versus the previous OptiMOS™ 5 generation, directly lowering switching losses in high-frequency DC-DC converters.
Architecturally, the device uses Infineon's latest trench MOSFET cell platform optimized for 100 V breakdown, with an integrated ESD-protected gate and an avalanche-rated body diode. The 100 V rating provides ample derating margin for 24 V automotive load-dump transients up to 35 V, while the low Qg supports fast switching at 100 kHz to 1 MHz in point-of-load converters. The PG-LHDSO-10-1 (also marketed as SSO10T 5x7) leadless package exposes the die on the top side for direct cooling.
Typical applications include 48 V mild-hybrid DC-DC converters, automotive HVAC blower and pump drivers, electronic power steering (EPS) controllers, battery management system (BMS) protection FETs, and on-board charger (OBC) auxiliary circuits. The combination of low RDS(on), automotive qualification, and top-side cooling makes it especially well-suited to space-constrained under-hood ECUs.
When designing with this part, calculate worst-case conduction loss as I²RDS(on) and switching loss as 0.5 × VDS × ID × (tr + tf) × fSW. At 20 A continuous in a sealed enclosure, a thermal review is mandatory because the SOA shrinks rapidly above 100 °C junction. The top-side cooled package allows a thermal interface material (TIM) plus heatsink for >2× the dissipation of comparable bottom-cooled parts.
This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Engineers can quickly evaluate whether the IAUCN10S7L290TATMA1 fits their AEC-Q100-qualified 100 V switching application, and where to source it with full traceability.
Bộ thay thế dễ dàng lắp đặt cho IAUCN10S7L290TATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN10S7L290TATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Automotive Qualification, Series.
IAUCN10S7L290T
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUC100N04S6N028ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN08S7N024ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUZ40N10S5N130ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUZ30N10S5L240ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6N015ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN10S7L290TATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™ 7 |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 27 A |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ |
| Power Dissipation (PD) at TC=25°C | 45 W |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | Compliant |
| Lead-Free | Yes |
| Avalanche Rated | Yes |
| ESD Protection | HBM Class 1C (per Infineon datasheet) |
Cấu hình chân IAUCN10S7L290TATMA1
| Chân 1 | G1 — Gate 1 - gate control for source-1 cell |
| Chân 2 | S1 — Source 1 - source connection for cell 1 |
| Chân 3 | S1 — Source 1 - source connection for cell 1 |
| Chân 4 | S1 — Source 1 - source connection for cell 1 |
| Chân 5 | S1 — Source 1 - source connection for cell 1 |
| Chân 6 | S2 — Source 2 - source connection for cell 2 |
| Chân 7 | S2 — Source 2 - source connection for cell 2 |
| Chân 8 | S2 — Source 2 - source connection for cell 2 |
| Chân 9 | S2 — Source 2 - source connection for cell 2 |
| Chân 10 | G2 — Gate 2 - gate control for source-2 cell |
Khu vực hoạt động an toàn - IAUCN10S7L290TATMA1 (DC)
Ứng dụng tiêu biểu
IAUCN10S7L290TATMA1 phù hợp cho 6 Áp dụngs: 48 V Mild-Hybrid DC-DC Converter, Automotive HVAC Blower & Pump Drivers, Electronic Power Steering (EPS) Controller, Battery Management System (BMS) Protection FET, On-Board Charger (OBC) Auxiliary Circuit, Industrial 24 V / 48 V Bus Switch.
48 V Mild-Hybrid DC-DC Converter
The IAUCN10S7L290TATMA1 is well suited to 48 V mild-hybrid DC-DC converters where 100 V VDS derating covers 48 V bus plus inductive overshoot to 70-80 V. Its 28.6 mΩ max RDS(on) at VGS = 10 V keeps conduction loss under 15 W at 25 A, while the OptiMOS™ 7 cell's reduced gate charge cuts switching loss enough to push fSW above 200 kHz. The top-side cooled PG-LHDSO-10-1 package accepts a thermal interface material plus heatsink for sustained 45 W dissipation in sealed under-hood enclosures. Compared with bottom-cooled DFN parts, the top-side cooling more than doubles sustained current capability at 100 °C ambient.
Được đề xuất
Automotive HVAC Blower & Pump Drivers
In HVAC blower and coolant-pump motor drives, the IAUCN10S7L290TATMA1 serves as the low-side or high-side switch in an H-bridge configuration. Its 27 A continuous drain current handles 8-15 A motor inrush without thermal shutdown, and the 100 V VDS rating tolerates the inductive flyback from motor windings when paired with a flyback Schottky clamp. The automotive AEC-Q100 qualification plus PPAP support meets OEM supplier requirements. The PG-LHDSO-10-1 (SSO10T) footprint is shared across the Infineon automotive MOSFET portfolio, enabling PCB layout reuse across 12 V and 48 V motor variants on the same ECU hardware.
Được đề xuất
Electronic Power Steering (EPS) Controller
The IAUCN10S7L290TATMA1 is suitable for EPS controller power stages where 100 V VDS supports the 12 V or 24 V battery rail plus reverse-battery and load-dump transients. Its 28.6 mΩ max RDS(on) at VGS = 10 V maintains high efficiency in 30-50 A peak torque-assist current pulses, and the top-side cooled PG-LHDSO-10-1 package extracts heat to a heatsink for sustained torque cycling. The AEC-Q100 grade and ISO 26262 process documentation support ASIL-rated steering ECUs. The reduced Qg of OptiMOS™ 7 versus OptiMOS™ 5 also lowers gate-drive losses at the high PWM frequencies used for fine torque control.
Được đề xuất
Battery Management System (BMS) Protection FET
In 12 V and 24 V automotive battery management systems, the IAUCN10S7L290TATMA1 can be deployed as a high-side or low-side protection FET in the battery disconnect path. Its 100 V VDS rating supports 48 V battery stacks in mild-hybrid packs, and the 28.6 mΩ max RDS(on) at VGS = 10 V keeps steady-state I²R loss below 5 W at 15 A continuous discharge. The avalanche-rated body diode and -55 °C to +175 °C junction temperature range ensure survival of cold-crank and load-dump events. The automotive qualification and top-side cooled package meet the high-reliability requirements of OEM battery pack designs.
Được đề xuất
On-Board Charger (OBC) Auxiliary Circuit
The IAUCN10S7L290TATMA1 fits on-board charger auxiliary circuits such as 12 V auxiliary outputs, cooling-fan drivers, and PFC bypass relays. The 100 V VDS rating and 27 A continuous drain current support auxiliary power stages up to roughly 1 kW, while the OptiMOS™ 7 low-Qg design reduces gate-drive stress on the auxiliary transformer-isolated driver. The top-side cooled PG-LHDSO-10-1 footprint simplifies heatsink integration in the cramped OBC enclosure, where PCB area is at a premium. AEC-Q100 qualification and PPAP support streamline OEM validation cycles.
Được đề xuất
Industrial 24 V / 48 V Bus Switch
Outside automotive, the IAUCN10S7L290TATMA1 suits industrial 24 V and 48 V bus switching applications such as PLC outputs, solenoid drivers, and solid-state relays. Its 100 V VDS comfortably tolerates 24 V and 48 V rail transients per IEC 61131-2, and the 28.6 mΩ max RDS(on) at VGS = 10 V keeps dissipation low enough for fan-less industrial enclosures. The wide -55 °C to +175 °C junction temperature range supports outdoor cabinet installations, and the top-side cooled PG-LHDSO-10-1 footprint simplifies thermal management on metal-core PCBs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN10S7L290TATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN10S7L290T | IAUC100N04S6N028ATMA1 | IAUCN08S7N024ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-LHDSO-10-1 (SSO10T 5x7) | PG-LHDSO-10-1 (SSO10T 5x7) - same | PG-LHDSO-10-1 (SSO10T 5x7) - same | PG-LHDSO-10-1 (SSO10T 5x7) - same |
| Drain-Source Voltage (VDS) max | 100 V | 100 V | 40 V | 80 V |
| Continuous Drain Current (ID) | 27 A | 27 A | 100 A | 40 A |
| RDS(on) max @ VGS=10V | 28.6 mΩ | 28.6 mΩ | 2.8 mΩ | 2.4 mΩ |
| Automotive Grade | Yes (AEC-Q100) | Yes (AEC-Q100) | Yes (AEC-Q100) | Yes (AEC-Q100) |
| OptiMOS Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 | OptiMOS 7 |
Bảo phân biệt quan trọng
- OptiMOS 7 generation with ~30% lower gate charge than OptiMOS 5 (vsIAUZ40N10S5N130ATMA1)
- Top-side cooled package for direct heatsink attachment (vsBSC014NE2LSIATMA1 (bottom-cooled DFN))
- 100 V VDS rating covers 48 V mild-hybrid bus plus margin (vsIAUC100N04S6N028ATMA1 (40 V))
Ghi chú thiết kế
Estimated: at ID=20 A continuous, TC=80 °C, RDS(on) rises to roughly 1.8× the 25 °C value (~52 mΩ) producing ~21 W of conduction loss. With a top-side cooled PG-LHDSO-10-1 package and a thermal interface material plus heatsink, junction-to-ambient thermal resistance drops below 5 °C/W, keeping TJ under 175 °C. Without the heatsink the part will exceed thermal limits within minutes. Always validate with a thermocouple on the package top surface during prototype bring-up.
The PG-LHDSO-10-1 (SSO10T 5x7) package has a top-side thermal pad that must be soldered (or thermal-interface-material bonded) to a copper heatsink or top-side spreader. Use 2 oz copper on both top and bottom layers with 9-12 thermal vias (0.3 mm drill, 0.5 mm pad) under the package. Minimize the gate-loop inductance by routing the gate-driver output directly over short, wide traces to pins 1 and 10 to prevent ringing at the Miller plateau.
Do not exceed VGS = ±20 V (per Infineon datasheet) - exceeding this destroys the gate oxide. Source pins must be Kelvin-sensed through a low-inductance path back to the gate driver to avoid gate-oscillation. For high-side (high-side switch) operation, ensure the bootstrap capacitor and gate-drive voltage track the source pin swing, and add a TVS clamp from drain to source to clip inductive flyback within the 100 V VDS rating during motor or solenoid turn-off events.
Thông tin tuân thủ
AEC-Q100 qualified per Infineon automotive-grade OptiMOS 7 product family. RoHS and REACH compliant. Halogen-free per IEC 61249-2-21. Conflict-mineral reporting per SEC Form SD.
