IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IAUZ40N08S5N100ATMA1 ✓ Hoạt độngIAUZ40N08S5N100ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify electrical signals in power conversion. N-channel MOSFETs like the IAUZ40N08S5N100 conduct when a positive gate-source voltage is applied, and they sit in the power semiconductor hierarchy between signal-level transistors and high-current IGBT modules. The OptiMOS family specifically targets synchronous rectification, motor drive, and DC-DC conversion where switching loss and conduction loss must both be minimized.
Key specifications include a drain-source breakdown voltage of 80 V, a continuous drain current of 40 A at 25 °C case temperature, gate threshold voltage (VGS(th)) typically around 2.5 V to 3.5 V, and an input capacitance of approximately 1591 pF at 40 V. The PG-TDSON-8 package exposes the drain through the thermal pad, enabling direct PCB cooling with a very low junction-to-case thermal resistance and eliminating the need for an external heatsink in many applications.
Architecturally, the device uses a trench-gate cell structure that reduces on-state resistance per unit silicon area while keeping gate charge low. The combination of low RDS(on) (10 mΩ), moderate Qg (24.2 nC), and a small 3.3 × 3.3 mm footprint gives an excellent figure of merit (FOM = RDS(on) × Qg) for high-frequency switching converters up to several hundred kHz.
Typical applications include automotive LED lighting drivers, 12 V/48 V board-net converters, electric power steering (EPS), braking system pumps, and solenoid or relay drivers. The wide VDS rating also allows use as a protection switch in industrial 24 V systems and as the low-side switch in half-bridge motor drives.
When designing with this part, ensure the gate driver can supply the 24.2 nC gate charge with adequate rise/fall times, and observe strict PCB layout practices (minimized source-loop inductance) to avoid voltage spikes that could exceed the 80 V rating. A small RC snubber or gate-source resistor often improves EMI in PWM-driven applications.
This page synthesizes distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IAUZ40N08S5N100ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUZ40N08S5N100ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, MSL Level, Operating Junction Temperature, Operating Temperature Range.
BSC123N08NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC64N08S5L075ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ070N08LS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC052N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTMFS5C612NLT1G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUZ40N08S5N100ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS-5 N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 40 A |
| Power Dissipation (PD, Tc=25°C) | 68 W |
| On-Resistance RDS(on) max | 10 mΩ @ VGS=10 V, ID=20 A |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V |
| Gate-Source Voltage VGS max | ±20 V |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C (TJ) |
| Hộp | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Trạng thái RoHS | Compliant |
| Channel Type | N-Channel |
Cấu hình chân IAUZ40N08S5N100ATMA1
| Chân 1 | GATE — Gate drive input |
| Chân 2 | DRAIN — Drain connection (tied to thermal pad) |
| Chân 3 | DRAIN — Drain connection (tied to thermal pad) |
| Chân 4 | DRAIN — Drain connection (tied to thermal pad) |
| Chân 5 | DRAIN — Drain connection (tied to thermal pad) |
| Chân 6 | SOURCE — Source connection |
| Chân 7 | SOURCE — Source connection |
| Chân 8 | SOURCE — Source connection |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IAUZ40N08S5N100ATMA1 phù hợp cho 6 Áp dụngs: Automotive LED Lighting Driver, 48V Mild-Hybrid Board-Net DC-DC, Electric Power Steering (EPS) Motor Drive, Braking System Pump/Valve Driver, Solenoid and Relay Driver (24V Industrial), USB-PD and 12V Hot-Swap Protection.
Automotive LED Lighting Driver
The IAUZ40N08S5N100ATMA1 is ideal as the low-side PWM switch in automotive LED front-light and DRL modules. With 10 mΩ RDS(on) at 10 V VGS, conduction loss stays below 1 W at 10 A continuous LED current, and the 80 V VDS rating provides margin against automotive load-dump transients up to 35 V. The AEC-Q101 qualification ensures operation across -40 °C to +125 °C ambient headlight environments. OptiMOS-5 switching characteristics also help designers meet CISPR 25 EMI limits without heavy snubbing.
Được đề xuất
48V Mild-Hybrid Board-Net DC-DC
In 48V mild-hybrid automotive converters, the IAUZ40N08S5N100ATMA1 works as the synchronous rectifying MOSFET on the 12V output side of a buck or push-pull topology. Its 24.2 nC gate charge enables switching frequencies of 200-500 kHz, while 10 mΩ RDS(on) keeps synchronous-FET conduction loss manageable at 30-40 A peak currents. The 80 V rating covers 48V systems with standard transient headroom. The PG-TDSON-8 footprint supports the high-current density PCB layouts demanded by underhood converters.
Được đề xuất
Electric Power Steering (EPS) Motor Drive
The IAUZ40N08S5N100ATMA1 serves as the low-side switch in three-phase EPS inverter half-bridges where reliability is critical. AEC-Q101 qualification, 175 °C maximum junction temperature, and 68 W power dissipation in the small PG-TDSON-8 package give the thermal margin required for 30 A continuous EPS phase currents. Its low RDS(on) reduces I²R losses that directly impact steering-effort fuel economy. The OptiMOS-5 process also lowers switching loss at 20 kHz PWM, reducing inverter heating.
Được đề xuất
Braking System Pump/Valve Driver
In anti-lock braking (ABS) and electronic stability control (ESC) hydraulic pump drivers, the IAUZ40N08S5N100ATMA1 handles 15-25 A inductive load switching with reliable avalanche ruggedness. The 80 V VDS rating absorbs back-EMF spikes from DC motor windings, while the 10 mΩ RDS(on) limits steady-state heating during pump operation. AEC-Q101 qualification and the small 3.3 × 3.3 mm PCB footprint let designers fit multiple channels into compact ABS module enclosures. The OptiMOS-5 process also improves reverse-recovery behavior versus older MOSFETs.
Được đề xuất
Solenoid and Relay Driver (24V Industrial)
For industrial 24V solenoid and relay driver outputs on PLCs and I/O modules, the IAUZ40N08S5N100ATMA1 acts as a low-side driver with freewheeling-diode protection. The 80 V VDS rating tolerates the inductive kickback of 24 V solenoids when commutated, while 40 A peak current capability handles inrush on large valves and contactors. The PG-TDSON-8 package enables compact multi-channel driver cards with shared heatsinking. Designers can pair it with a small gate driver such as the 1EDN8511BXUSA1 for fast, repeatable turn-off.
Được đề xuất
USB-PD and 12V Hot-Swap Protection
The IAUZ40N08S5N100ATMA1 is well-suited as the hot-swap protection MOSFET on 12V automotive infotainment rails, including USB-PD and HDMI power outputs. Its 10 mΩ RDS(on) at 10 V VGS minimizes voltage drop across the protection FET, while 80 V VDS absorbs ringing on the 12V bus during load steps. AEC-Q101 qualification suits it for in-cabin automotive use. Pairing it with a hot-swap controller such as the ITS42K5DLDFXUMA1 gives designers a fast, self-protected power switch with current-limit behavior.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUZ40N08S5N100ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC123N08NS3GATMA1 | IAUC64N08S5L075ATMA1 | BSZ070N08LS5ATMA1 | BSC052N08NS5ATMA1 | NTMFS5C612NLT1G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8 (3.3×3.3 mm) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | SO-8FL (PowerTDFN-8) - same land pattern |
| Drain-Source Voltage VDS | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| RDS(on) at VGS=10 V | 10 mΩ | 12 mΩ (+20%) | 7.5 mΩ (-25%) | 7.0 mΩ (-30%) | 5.2 mΩ (-48%) | 10 mΩ (similar) |
| Continuous Drain Current ID (Tc=25°C) | 40 A | 38 A | 50 A | 60 A | 65 A | 44 A |
| Total Gate Charge Qg | 24.2 nC | 30 nC | 20 nC | 18 nC | 15 nC | 26 nC |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-5 | OptiMOS-3 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | Shielded Gate PowerTrench |
| Approx. Unit Price (1pc, as of 2026-09-13) | $1.50 | $1.20 | $1.80 | $1.95 | $2.20 | $1.65 |
Bảo phân biệt quan trọng
- Lower switching loss versus OptiMOS-3 generation (vsBSC123N08NS3GATMA1)
- Better RDS(on) at given die size (vsNTMFS5C612NLT1G)
- Lower cost than newer OptiMOS-5 7 mΩ variants (vsBSZ070N08LS5ATMA1)
- Higher current rating than 60V-class alternatives (vsIAUC60N04S6N044ATMA1)
Ghi chú thiết kế
Estimated: at VDS=24 V, ID=20 A, and 50% PWM duty cycle in a hot-loop application, the IAUZ40N08S5N100ATMA1 dissipates roughly 2.0 W from conduction loss alone (I²R = 20² × 0.010). With θJA of approximately 50 °C/W on a 1-square-inch copper pour, the junction rises 100 °C above ambient, so the case temperature must stay below 75 °C in underhood enclosures. A 4-layer PCB with 2 oz copper on the drain thermal pad keeps θJA near 40 °C/W and improves SOA margin.
Place the gate-drive loop (gate driver output, gate resistor, gate pin, source pin back to driver ground) over the smallest possible area to limit parasitic inductance. The drain-to-source switching loop must also be minimized - keep input bypass ceramic capacitors within 2 mm of the drain thermal pad and source pins. Source inductance shared between the power path and gate-drive path causes gate-oscillation and possible avalanche failure in hard-switched topologies.
Do not exceed VGS=±20 V (absolute maximum); exceeding ±20 V even briefly can destroy the gate oxide. Always add a 10 kΩ gate-source resistor to hold the MOSFET off during controller start-up. For PWM applications above 100 kHz, use a dedicated gate driver (1EDN8511BXUSA1 or IFX007TAUMA1) - driving 24.2 nC directly from a microcontroller GPIO will give unacceptably slow edges and high switching loss.
OptiMOS-5 switches in 20-50 ns rise times create high dV/dt on the 12V or 24V rail. Add a small RC snubber (10 Ω + 1 nF) across the MOSFET drain-source to dampen ringing, and place a ferrite bead on the supply rail to attenuate common-mode emissions. For CISPR 25 Class 5 compliance, consider a gate-source resistor of 10-47 Ω to slow the edge without significantly increasing switching loss.
Thông tin tuân thủ
AEC-Q101 qualified for automotive discrete semiconductors (note: AEC-Q101 is the correct standard for MOSFETs, not AEC-Q100 which applies to ICs). RoHS and REACH compliant per Infineon product page.
