IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
MPN: IAUC64N08S5L075ATMA1 ✓ Hoạt độngIAUC64N08S5L075ATMA1 Tóm tắt
What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled three-terminal discrete semiconductor that uses an insulated gate to modulate conduction between source and drain. Power MOSFETs of this type belong to the broader hierarchy of discrete semiconductors → transistors → MOSFETs → power MOSFETs → N-channel MOSFETs, and they serve as the fundamental switching element in modern DC-DC converters, motor drives, and load switches.
Key features include a 7.5 mΩ maximum on-resistance at VGS = 10 V, a low gate charge (Qg) optimized for high-frequency switching, and an avalanche-rated single-pulse body diode. The device supports operation up to VDS = 80 V and offers a thermally efficient exposed-pad package that minimizes junction-to-case thermal resistance, enabling high-current handling in automotive and industrial environments.
The OptiMOS™ 5 technology uses an advanced trench structure that reduces conduction losses by up to 30% compared to previous OptiMOS generations while improving switching performance. The combination of low RDS(on), low Qg, and small package footprint makes the IAUC64N08S5L075ATMA1 particularly well suited to high-density synchronous rectifiers and ORing FET applications.
Typical applications include automotive 48 V systems, electric power steering (EPS), brushless DC (BLDC) motor drives, LED lighting drivers, and high-current load switches. The AEC-Q101 qualification makes it suitable for under-hood automotive environments where reliability over wide temperature ranges is critical.
When designing with this MOSFET, ensure the gate-drive voltage reaches the full 10 V enhancement level to achieve the specified RDS(on) and consider using a gate-driver IC with sufficient peak current to switch Qg quickly. The exposed pad must be soldered to a sufficient copper area to keep the junction temperature within safe limits.
This page synthesizes distributor pricing, drop-in alternatives sourced from manufacturer cross-reference data, and practical design notes not found in the manufacturer datasheet — including parametric comparisons and PCB layout guidance specific to the PG-TDSON-8-33 footprint.
Bộ thay thế dễ dàng lắp đặt cho IAUC64N08S5L075ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC64N08S5L075ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, MSL Level, Operating Junction Temperature, Operating Temperature Range.
IAUC80N08S5L070ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUC45N08S5L150ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUC100N04S6L014ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NVMFS7N08CT1G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC123N08NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC64N08S5L075ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 |
| Kiểu transitor | N-Channel MOSFET |
| Technology | OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ |
| Power Dissipation (PD) at TC=25°C | 75 W |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8-33 (5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Compliant |
| Cấp MSL | MSL1 (per JEDEC J-STD-020) |
| Số lượng chân | 8 |
Cấu hình chân IAUC64N08S5L075ATMA1
| Chân 1 | S — Source (connected to exposed pad) |
| Chân 2 | S — Source (connected to exposed pad) |
| Chân 3 | S — Source (connected to exposed pad) |
| Chân 4 | G — Gate |
| Chân 5 | D — Drain |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | D — Drain |
Khu vực hoạt động an toàn (DC, TC=25°C)
Ứng dụng tiêu biểu
IAUC64N08S5L075ATMA1 phù hợp cho 6 Áp dụngs: 48V Mild-Hybrid Automotive Systems, Electric Power Steering (EPS) Motor Drive, BLDC Motor Drive (Automotive and Industrial), High-Current LED Lighting Drivers (Automotive Headlamps), High-Current Load Switch / ORing FET, Synchronous Rectifier in Isolated DC-DC Converters.
48V Mild-Hybrid Automotive Systems
The IAUC64N08S5L075ATMA1 fits 48V mild-hybrid power architectures thanks to its 80V VDS rating (66% headroom over a 48V nominal rail) and 7.5 mΩ max RDS(on). The low on-resistance reduces conduction losses in high-current 48V bus switches and DC-DC converters interfacing between 48V and 12V domains. The AEC-Q101 qualification and 175°C junction temperature rating ensure reliable operation in under-hood environments. Compared with discrete silicon MOSFETs of earlier generations, the OptiMOS 5 process cuts switching losses by ~30%, enabling higher switching frequencies and smaller magnetics in 48V-to-12V buck converters up to several kW.
Được đề xuất
Electric Power Steering (EPS) Motor Drive
In EPS applications the IAUC64N08S5L075ATMA1 serves as the synchronous-rectifier low-side FET in a three-phase BLDC inverter steering the assist motor. The 64A continuous drain current easily handles the 30-50A peak currents typical of column-assist EPS systems, while the 7.5 mΩ RDS(on) keeps conduction losses below 5W at peak torque. The PG-TDSON-8-33 footprint enables compact PCB integration next to the motor control MCU, and AEC-Q101 qualification satisfies the strict automotive reliability requirements for safety-critical steering subsystems.
Được đề xuất
BLDC Motor Drive (Automotive and Industrial)
The IAUC64N08S5L075ATMA1 is well matched to three-phase BLDC motor drives up to ~3 kW thanks to its 80V rating (covers 24V and 48V bus systems) and 7.5 mΩ RDS(on). Used as the low-side synchronous-rectifier FET in each phase leg, it minimizes body-diode conduction losses during commutation. The low gate charge of the OptiMOS 5 family supports PWM frequencies up to 50 kHz without excessive driver losses. The exposed thermal pad of the PG-TDSON-8-33 package allows direct PCB heatsinking to keep junction temperature below 150°C at full motor stall current.
Được đề xuất
High-Current LED Lighting Drivers (Automotive Headlamps)
The IAUC64N08S5L075ATMA1 works as the main switching FET in automotive LED headlamp driver stages where load currents reach 5-15A per string. Its 80V rating handles the inductive kick from the buck-converter power stage, while 7.5 mΩ RDS(on) keeps switch conduction loss below 1W even at the upper end of the current range. The OptiMOS 5 process enables switching frequencies above 200 kHz, allowing smaller inductors and a more compact driver PCB that fits inside the headlamp housing. AEC-Q101 qualification and operation to +175°C TJ support under-hood mounting.
Được đề xuất
High-Current Load Switch / ORing FET
In redundant power-supply ORing and load-disconnect applications the IAUC64N08S5L075ATMA1 acts as the main pass-FET. Its 7.5 mΩ RDS(on) minimizes voltage drop in the powered path — at 30A continuous the drop is only 225 mV — reducing dissipation and eliminating the need for paralleled devices. The 80V VDS rating provides margin against load-dump transients on 12V/24V automotive buses. The PG-TDSON-8-33 footprint simplifies PCB layout, and the part's low Qg allows fast turn-off for inrush-current limiting during hot-plug events.
Được đề xuất
Synchronous Rectifier in Isolated DC-DC Converters
The IAUC64N08S5L075ATMA1 serves as the synchronous rectifier FET on the secondary side of isolated 24V/48V-to-low-voltage DC-DC converters. Its 80V VDS rating covers rectified 24V or 48V rails with substantial safety margin, while 7.5 mΩ RDS(on) reduces secondary-side conduction loss and improves overall converter efficiency by 1-2% versus higher-RDS(on) alternatives. The OptiMOS 5 low Qrr body diode reduces dead-time losses, allowing higher switching frequencies (100-300 kHz) and smaller magnetic components. The PG-TDSON-8-33 package fits on the secondary-side PCB alongside the output inductor.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC64N08S5L075ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC80N08S5L070ATMA1 | IAUC45N08S5L150ATMA1 | IAUC100N04S6L014ATMA1 | NVMFS7N08CT1G | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same | SO-8FL (5x6 mm) - same footprint class | PG-TDSON-8-33 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 40 V | 80 V | 80 V |
| On-Resistance (RDS(on)) max | 7.5 mΩ | 7.0 mΩ | 15 mΩ | 1.4 mΩ | 7.0 mΩ | 12.3 mΩ |
| Continuous Drain Current (ID) | 64 A | 80 A | 45 A | 100 A | 60 A | 50 A |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | onsemi Trench | OptiMOS 3 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Approx. Unit Price (qty 1000) | $0.65 | $0.78 | $0.45 | $1.10 | $0.72 | $0.42 |
Bảo phân biệt quan trọng
- Lowest RDS(on) in 80V N-channel OptiMOS 5 family (vsIAUC45N08S5L150ATMA1)
- Higher VDS rating for 48V automotive systems (vsIAUC100N04S6L014ATMA1)
- OptiMOS 5 process for 30% lower switching loss vs older generations (vsBSC123N08NS3GATMA1)
- Infineon OEM support and long-term automotive supply (vsNVMFS7N08CT1G (onsemi))
Ghi chú thiết kế
Estimated: at ID=30A continuous and RDS(on)=7.5 mΩ (at TJ=25°C), conduction loss is P=I²R=6.75 W. Using the published thermal resistance of the PG-TDSON-8-33 on a 4-layer 2s2p FR4 PCB (JEDEC JESD51-5-7), the junction-to-ambient thermal resistance is approximately 50°C/W. Without a heatsink, this produces a 50×6.75 ≈ 338°C temperature rise, far exceeding the 175°C limit. Either derate current to ~15A or mount on a copper-pour area of at least 1 sq inch (6 cm²) on the top and bottom layers to bring θJA down to 35-40°C/W, keeping Tj well within safe limits at 30A.
The exposed thermal pad (EP) of the PG-TDSON-8-33 must be soldered directly to a copper pour on the top layer and connected via multiple thermal vias to inner/outer copper planes to maximize heat spreading. Source pins 1-3 should be tied to a small copper island that connects to the EP for best switching performance; gate pin 4 should have a Kelvin-source connection if used at high dV/dt. Place the gate-driver IC within 5 mm of the gate pin to minimize gate-loop inductance and prevent parasitic ringing that could exceed VGS ratings.
Do not drive the gate with less than 10V — at VGS=4.5V the RDS(on) can be 2-3× higher than spec, dramatically increasing conduction loss and potentially causing thermal runaway. Use a dedicated gate-driver IC (not a logic GPIO) capable of sourcing/sinking at least 1A peak gate current to switch the gate charge quickly. Do not exceed the avalanche energy rating during turn-off of inductive loads; add a TVS diode or RC snubber if the application involves relays or motors. Finally, verify the part is sourced from authorized distributors to avoid counterfeit parts that may lack AEC-Q101 screening.
Thông tin tuân thủ
AEC-Q101 qualified (automotive MOSFET standard). RoHS and REACH compliant per Infineon product page. Lead-free (Pb-free) reflow soldering compatible. MSL1 per JEDEC J-STD-020. Halogen-free. Conflict-minerals compliant per Infineon CMRT filings.
