IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
MPN: IPC70N04S5L4R2ATMA1 ✓ Hoạt độngIPC70N04S5L4R2ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion circuits. N-channel MOSFETs, in particular, dominate high-current switching applications because electrons (the majority carrier) provide lower on-resistance than p-channel equivalents. OptiMOS 5 is Infineon's fifth-generation 40 V-300 V trench MOSFET platform, engineered to minimize switching and conduction losses simultaneously. This part sits in the broader power-management hierarchy: power MOSFET -> discrete semiconductor -> power electronics -> system-level power tree.
Key features that differentiate this part include its industry-leading figure of merit (R_DS(on) x Q_g) thanks to the OptiMOS 5 cell design, an integrated source-drain body diode optimized for low Q_rr, and a logic-level gate threshold that enables direct drive from 3.3 V-5 V microcontrollers without a gate-driver stage. The combination of 4.2 mΩ R_DS(on) and 70 A continuous current in the compact TDSON-8-34 footprint delivers high power density, suitable for space-constrained automotive ECU boards.
The IPC70N04S5L4R2ATMA1 is AEC-Q101 qualified, MSL1, and 100% avalanche-tested, indicating it has been validated for harsh automotive electrical environments including load-dump, jump-start, and reverse-battery transients. The 175°C junction temperature rating provides a wide thermal envelope for under-hood or near-engine placement.
Typical applications include automotive 12 V/24 V high-current switching (e.g., ECU power distribution, motor drive H-bridges, LED matrix drivers, and battery-management OR-ing switches), industrial buck/boost converter high-side switches, and high-current USB-PD load switches. The 4.2 mΩ R_DS(on) keeps conduction losses below 1% even at 50 A load.
When designing with this MOSFET, ensure Vgs is held above 6 V for full enhancement under all conditions (logic-level is for turn-on only; full R_DS(on) is specified at Vgs = 10 V). The exposed drain pad must be soldered to a sufficiently large copper pour to keep thermal resistance (R_theta_JA) within design budgets. Use a gate-resistor to dampen parasitic ringing, especially in motor-drive circuits where dV/dt can couple back through C_gd.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IPC70N04S5L4R2ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPC70N04S5L4R2ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, MSL Level, Avalanche Tested, Technology, Operating Temperature Range.
IPC100N04S5L1R5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB100N04S4H2ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD50N04S4L08ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD90N04S403ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ0901NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC70N04S5L4R2ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | 50 W |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V |
| Hộp | PG-TDSON-8-34 (Surface Mount) |
| Operating Temperature (Tj) | -55°C to +175°C |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Tested | 100% (60 A production test) |
| Trạng thái RoHS | Compliant (Green Product) |
| Configuration | Single with Built-in Diode |
| Case Connection | DRAIN |
Cấu hình chân IPC70N04S5L4R2ATMA1
| Chân 1 | GATE — Gate input (logic-level compatible) |
| Chân 2 | DRAIN — Drain (internally connected to exposed pad) |
| Chân 3 | DRAIN — Drain (internally connected to exposed pad) |
| Chân 4 | DRAIN — Drain (internally connected to exposed pad) |
| Chân 5 | DRAIN — Drain (internally connected to exposed pad) |
| Chân 6 | DRAIN — Drain (internally connected to exposed pad) |
| Chân 7 | DRAIN — Drain (internally connected to exposed pad) |
| Chân 8 | SOURCE — Source (return path) |
Khu vực hoạt động an toàn (DC, Tc=25°C)
Ứng dụng tiêu biểu
IPC70N04S5L4R2ATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V ECU Power Distribution, BLDC Motor Drive H-Bridge, Battery Management OR-ing / Load Switch, High-Current LED Matrix Driver, Industrial 24V Solenoid / Relay Driver, USB-PD / High-Current Load Switch.
Automotive 12V ECU Power Distribution
The IPC70N04S5L4R2ATMA1 suits 12 V automotive ECU high-side switching thanks to its 40 V Vdss rating that absorbs 24 V jump-start and load-dump transients, 4.2 mΩ R_DS(on) that keeps conduction loss at 30 A below 4 W, and AEC-Q101 qualification. Placed between battery rail and ECU supply, it provides solid-state load switching with logic-level gate drive directly from a 5 V microcontroller GPIO. The TDSON-8-34 footprint simplifies PCB layout, and the 175°C Tj rating enables placement near engine compartments. Compared to mechanical relays, this MOSFET enables PWM-based soft-start, diagnostics, and faster switching. Designers should still add a TVS for ISO 7637-2 compliance.
Được đề xuất
BLDC Motor Drive H-Bridge
The IPC70N04S5L4R2ATMA1 fits 12 V/24 V brushless DC motor H-bridge high-side and low-side positions because its 4.2 mΩ R_DS(on) minimizes conduction loss during PWM at 20-50 kHz, 70 A continuous current handles motor inrush, and logic-level gate drive is compatible with 3.3 V microcontrollers via gate-driver ICs. The 100% avalanche-tested rating and 175°C Tj provide headroom for hard switching transients. Used in HVAC blowers, water pumps, and electric power steering auxiliary motors. Design tip: keep gate-loop inductance below 5 nH by minimizing gate-driver-to-MOSFET trace length to suppress ringing.
Được đề xuất
Battery Management OR-ing / Load Switch
The IPC70N04S5L4R2ATMA1 functions as an ideal-diode OR-ing switch in redundant battery or e-fuse topologies, leveraging its 4.2 mΩ R_DS(on) to drop less than 0.3 V at 70 A versus Schottky diode alternatives. Its logic-level gate drive enables microcontroller-controlled reverse-current blocking, while the 40 V Vdss tolerates 24 V industrial bus transients. The AEC-Q101 qualification suits automotive BMS modules. Place source-side body diode parallel with a Schottky for dead-time conduction; the integrated body diode handles 70 A avalanche events safely per the production test rating.
Được đề xuất
High-Current LED Matrix Driver
The IPC70N04S5L4R2ATMA1 drives automotive LED matrix headlamp strings because its 70 A continuous current handles multiple parallel LED strings, 40 V Vdss tolerates load-dump, and 4.2 mΩ R_DS(on) keeps conduction loss manageable even at 10 A per channel. Logic-level gate drive integrates with LED driver ICs that use 3.3 V or 5 V PWM dimming. The exposed drain pad simplifies thermal management on aluminum-core PCBs. Designers can switch up to 1 MHz with proper gate-driver selection, enabling high-resolution matrix-beam dimming patterns.
Được đề xuất
Industrial 24V Solenoid / Relay Driver
The IPC70N04S5L4R2ATMA1 drives 24 V industrial solenoids and relay coils because its 40 V Vdss comfortably tolerates 24 V nominal plus flyback transients clamped to 36 V, 70 A continuous handles solenoid inrush, and 4.2 mΩ R_DS(on) keeps dissipation below 5 W at typical 20 A loads. Logic-level gate drive interfaces directly with PLC 24 V output modules. The 100% avalanche-tested rating protects against unclamped inductive turn-off events. For free-wheeling, use an external TVS or Schottky diode rated for the peak current.
Được đề xuất
USB-PD / High-Current Load Switch
The IPC70N04S5L4R2ATMA1 enables 5 V/12 V/20 V USB-PD load switching where its 4.2 mΩ R_DS(on) drops only 0.21 V at 5 A and 70 A continuous current supports 100 W+ power profiles. Logic-level gate drive from USB-PD controller GPIOs eliminates driver stages. The 40 V Vdss tolerates 20 V PD plus inductive ringing. Used in automotive USB charging ports, industrial docking stations, and high-current eFuse circuits. The exposed drain pad enables compact layouts with minimal copper area for thermal relief.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPC70N04S5L4R2ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPC100N04S5L1R5ATMA1 | IPB100N04S4H2ATMA1 | IPD50N04S4L08ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vdss (V) | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Id @ Tc=25°C (A) | 70 A | 100 A | 100 A | 50 A | 90 A |
| R_DS(on) typ @ Vgs=10V (mΩ) | 4.2 mΩ | 1.5 mΩ | 1.2 mΩ | 8 mΩ | 4 mΩ |
| Gate Drive Voltage (V) | 4.5 V (logic level) | 4.5 V (logic level) | 10 V (standard) | 4.5 V (logic level) | 10 V (standard) |
| Power Dissipation (W) | 50 W | 100 W | 115 W | 50 W | 75 W |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Lowest R_DS(on) at logic-level Vgs in 40V OptiMOS 5 family (vsIPD50N04S4L08ATMA1)
- Higher continuous current rating than lower-R_DS(on) alternatives (vsBSZ0901NSIATMA1)
- Automotive-grade qualification at competitive price (vsIPB100N04S4H2ATMA1)
Ghi chú thiết kế
Estimated: at Id=30A and R_DS(on)=4.2mΩ, conduction loss is approximately 3.8W. The TDSON-8-34 package has typical R_theta_JA around 50°C/W on 1oz copper 1sq-inch pad, giving a 190°C junction temperature rise above 25°C ambient. Use at least 2sq-inch of 2oz copper on the drain pad for thermal relief, or place multiple thermal vias to inner planes. For sustained 50A+ operation, an external heatsink or top-side cooling is required.
Minimize the gate-loop inductance by placing the gate-driver as close as possible to pin 1 (GATE), keeping the gate-trace short and wide. Use a 10Ω-100Ω gate resistor to dampen ringing caused by parasitic L-C resonance between gate inductance and C_iss. Place a 100kΩ pull-down resistor from gate to source to ensure the MOSFET stays off during MCU reset or floating-GP conditions. Source: Infineon OptiMOS 5 application note on gate-drive layout.
Do not operate the gate below the Vgs(th) minimum of approximately 1.0 V - the MOSFET may partially turn on, causing shoot-through in half-bridge configurations. Do not exceed Vgs=±20V absolute maximum; use a Zener clamp or gate-driver with built-in protection. The body diode has a limited reverse-recovery rating; for hard-switched bridge topologies add an external Schottky anti-parallel diode rated for the application current. Source: Infineon datasheet absolute maximum ratings.
Thông tin tuân thủ
AEC-Q101 (not AEC-Q100) qualified for automotive applications. MSL1 rated to 260°C peak reflow. 175°C maximum operating junction temperature. Green Product (RoHS compliant) per Infineon product designation.
