IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon
MPN: IPC50N04S55R8ATMA1 ✓ Hoạt độngIPC50N04S55R8ATMA1 Tóm tắt
What is an N-channel power MOSFET? An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switch that uses an N-type conducting channel between drain and source. Power MOSFETs like the OptiMOS 5 family sit in the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. They are the workhorse switching elements in DC-DC converters, motor drives, and load switches where high efficiency, low conduction loss, and fast switching are required. The 40 V rating positions this part in the low-voltage synchronous-rectification tier commonly used in 12 V automotive and 24 V industrial rails.
Key features of the IPC50N04S55R8ATMA1 include an ultra-low typical R_DS(on) of 5.8 mΩ at 10 V VGS, a logic-level compatible gate threshold, and a 305 pF output capacitance figure that allows fast switching transitions. The TDSON-8-33 package exposes the drain through a large thermal pad, giving a junction-to-case thermal resistance well below standard SO-8 equivalents and enabling continuous high-current operation without a separate heatsink.
Architecturally, the OptiMOS 5 platform uses Infineon's latest trench-technology cell design, balancing on-resistance, gate charge, and figure-of-merit (FOM = R_DS(on) × Qg) for synchronous-rectification and hot-swap applications. The result is a part that drops less power than its predecessors while accepting the same gate-drive rails.
Typical applications include automotive 12 V ECU switching, eMobility load management, OR-ing and hot-swap controllers, and high-current DC-DC converter synchronous-rectifier stages. The AEC-Q101 qualification makes it directly suitable for under-hood and chassis electronics where automotive reliability is mandatory.
When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V for full enhancement, and place the gate-driver as close to the gate pin as possible to minimize the parasitic loop inductance that limits switching speed.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IPC50N04S55R8ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPC50N04S55R8ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, MSL Level, Avalanche Tested, Technology, Operating Temperature Range.
IPC50N04S5L5R5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC70N04S5L4R2ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC100N04S51R7ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N04NM7VATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD50N04S408ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC50N04S55R8ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) at Tc | 50 A |
| Power Dissipation (P_D) at Tc | 42 W |
| R_DS(on) Max (V_GS=10V) | 5.8 mΩ |
| Output Capacitance (C_oss) | 305 pF |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8-33 (TDSON EP) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested |
| RoHS / Green | RoHS compliant, Green Product |
| Polarity | Enhancement Mode |
Cấu hình chân IPC50N04S55R8ATMA1
| Chân 1 | Source — Source connection (pins 1-3, 5-8 are source) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Source — Source connection |
| Chân EP | Drain — Exposed pad - drain connection, also thermal pad |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
IPC50N04S55R8ATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V ECU Switching, Synchronous Rectifier in DC-DC Converters, Hot-Swap and OR-ing Controllers, eMobility BMS Load Switching, Industrial 24V Solenoid and Relay Drivers, USB PD and High-Current Load Switches.
Automotive 12V ECU Switching
The IPC50N04S55R8ATMA1's 40 V V_DS rating, 50 A continuous current and AEC-Q101 qualification make it a primary high-side or low-side switch for 12 V automotive ECU power distribution. With 5.8 mΩ R_DS(on) at 10 V V_GS, conduction loss at 20 A is only 2.3 W, allowing compact designs without external heatsinks. The TDSON-8-33 exposed pad provides thermal resistance low enough for sustained ECU load operation under the hood. The part's 100% avalanche rating also tolerates the inductive transients from relay coils and solenoids common in body-electronics modules.
Được đề xuất
Synchronous Rectifier in DC-DC Converters
In 12 V-to-1 V buck converters for server and telecom POL rails, the IPC50N04S55R8ATMA1 serves as the synchronous rectifier (low-side) MOSFET. Its 305 pF output capacitance supports multi-MHz switching transitions, and the 5.8 mΩ R_DS(on) minimizes I²R losses at high duty cycles. Compared to using the part as the high-side switch, low-side operation does not require bootstrap-rail headroom, simplifying the gate-drive design. Efficiency improvements over standard 40 V MOSFETs at 20-30 A loads typically reach 1.5-2%.
Được đề xuất
Hot-Swap and OR-ing Controllers
The IPC50N04S55R8ATMA1 is well suited for 12 V redundant power OR-ing and hot-swap insertion control in telecom and server backplanes. With 40 V V_DS headroom, the device absorbs transient inrush without avalanche breakdown. The 50 A continuous rating exceeds typical 30 A OR-ing diode currents, allowing direct board replacement of Schottky OR-ing solutions with a 2× efficiency improvement. AEC-Q101 qualification also suits industrial-grade telecom equipment that follows automotive reliability conventions.
Được đề xuất
eMobility BMS Load Switching
Battery management systems in light electric vehicles and e-scooters use 40 V MOSFETs for pack-discharge switching and pre-charge circuits. The IPC50N04S55R8ATMA1's 5.8 mΩ R_DS(on) at 50 A keeps discharge conduction loss below 15 W, and the AEC-Q101 qualification satisfies eMobility OEM quality requirements. The 175 °C junction rating provides thermal margin during pre-charge transients when I²R losses peak briefly at 70-80 A. The TDSON-8-33 package's small footprint supports compact BMS PCB layouts adjacent to cell-monitoring ICs.
Được đề xuất
Industrial 24V Solenoid and Relay Drivers
Industrial automation PLCs frequently switch 24 V solenoid and relay coils at 1-10 A. The IPC50N04S55R8ATMA1's 40 V V_DS rating covers the 24 V rail plus inductive transient overshoot from flyback spikes. Its low R_DS(on) and AEC-Q101 qualification suit harsh industrial environments where temperature cycling and vibration would otherwise degrade standard commercial MOSFETs. The exposed-pad TDSON-8-33 package is compatible with automated optical inspection (AOI) on high-volume SMT lines.
Được đề xuất
USB PD and High-Current Load Switches
USB Power Delivery 3.1 EPR systems deliver up to 28 V at 5 A (140 W) over standard Type-C cables, requiring a 40 V load switch on the source side. The IPC50N04S55R8ATMA1 fits this role with 5.8 mΩ R_DS(on) limiting conduction loss to ~1.5 W at 5 A. The exposed-pad package dissipates this heat without a heatsink. Compared to 30 V parts, the 40 V rating adds 25% margin against USB PD voltage transients during fast role-swap events, improving system robustness.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPC50N04S55R8ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPC50N04S5L5R5ATMA1 | IPC70N04S5L4R2ATMA1 | IPC100N04S51R7ATMA1 | ISC011N04NM7VATMA1 | IPD50N04S408ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-33 | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same |
| V_DS Max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R_DS(on) Typ @ 10V | 5.8 mΩ | 5.5 mΩ | 4.2 mΩ | 1.7 mΩ | 7 mΩ | 8 mΩ |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 |
Bảo phân biệt quan trọng
- Lowest-cost drop-in in TDSON-8-33 with 5.8 mΩ R_DS(on) (vsIPC50N04S5L5R5ATMA1)
- Balanced figure-of-merit (R_DS(on) × Qg) for high-frequency sync-rectifier use (vsIPC100N04S51R7ATMA1)
- AEC-Q101 qualified at MSL1 for direct automotive use (vsISC011N04NM7VATMA1)
Ghi chú thiết kế
Estimated: at 30 A continuous conduction, P_loss = I²×R_DS(on) = 30²×0.0058 = 5.22 W. The TDSON-8-33 package has a typical R_theta_JC of ~1.5 °C/W, giving a junction-to-case temperature rise of ~7.8 °C above the case. PCB layout is critical: at least 1 square inch of 2 oz copper on the drain pad keeps R_theta_JA below 50 °C/W. Without a thermal via array, the part can easily exceed 150 °C junction at full current - violating the 175 °C max with no margin for transient overshoot.
The gate-driver loop (driver output, gate resistor, gate pin, source return) must be minimized to <5 mm total loop length to control ringing. Place a 10 Ω gate resistor in series to damp the LC resonance from gate-source capacitance and source-lead inductance. For switching frequencies above 500 kHz, add a ferrite bead on the gate-drive path to suppress common-mode noise injection back into the controller. The exposed pad (drain) MUST be soldered - both for thermal performance and for the 50 A current capability rating.
Never operate the IPC50N04S55R8ATMA1 at V_GS below 4.5 V - the part is specified at 10 V V_GS for the R_DS(on) figure, and partial enhancement dramatically increases conduction loss. A common error is driving the gate from a 3.3 V logic output through a charge pump that fails at cold temperatures; always verify gate-drive amplitude over the full -40 °C to +125 °C automotive range. Also avoid exceeding the 40 V V_DS during flyback transients - add a TVS clamp or RC snubber if the load is inductive (relay coils, solenoids, transformers).
Recommended land pattern uses 6 thermal vias (0.3 mm diameter) in the exposed pad to the inner-layer copper plane. For double-sided PCBs, use 1 oz copper on top and 2 oz on bottom; for 4-layer boards, dedicate layer 2 as a thermal/ground plane stitched directly under the part. Source-pin copper pours (pins 1-3 and 5-8) carry the full 50 A and must be at least 5 mm wide on the top layer. Keep the high-current loop (drain-switch-source-load) physically small to minimize parasitic inductance.
Thông tin tuân thủ
AEC-Q101 (automotive discrete semiconductor standard) qualified per alldatasheet.com listing. RoHS compliant Green Product per Infineon. MSL1 rated for direct reflow at 260 °C peak.
