IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2
MPN: IPD50P04P413ATMA2 ✓ Hoạt độngIPD50P04P413ATMA2 Tóm tắt
A P-channel MOSFET (P-FET) is a voltage-controlled majority-carrier device in which the channel is formed by holes rather than electrons. Placed in the upper (high-side) position of a load circuit, a P-FET allows the load to be switched and protected with a low-side gate-drive referenced to ground - simplifying bootstrap and charge-pump design in half-bridges, motor drives, and reverse-polarity protection blocks. P-channel MOSFETs are widely used in 12 V/24 V automotive systems where N-channel drivers would otherwise require a charge pump or bootstrap diode for high-side switching.
Key features include an extended VDS range to -40 V (well above the 12 V/24 V automotive bus rails, with significant transient headroom for load-dump and jump-start events), an Rthson of 9.2 mΩ at VGS = -10 V that minimizes conduction loss, and an avalanche-rated single-pulse body diode for unclamped inductive switching. The OptiMOS-P2 cell shrinks die area, on-resistance, and gate charge (Qg) for the same Rds(on), which directly reduces both conduction loss and switching loss in PWM applications.
Architecturally, the device uses a trench-gate structure with optimized P-body and source-field-plate geometry to balance Rds(on), Qg, Qgd, and dv/dt immunity. The TO-252-3 (DPAK) package with a copper tab provides a thermal resistance of approximately 40 °C/W (junction-to-ambient on a 1 oz 1-in² copper pad, JEDEC EIA/JESD51), sufficient for several watts of dissipation with proper PCB layout.
Typical applications include high-side load switches in automotive body and lighting ECUs, reverse-polarity / reverse-battery protection, motor-drive half-bridges for HVAC blowers and seat adjusters, USB and infotainment power rails, and 24 V truck and bus systems. For 12 V rails the device is typically driven directly by a microcontroller GPIO through a small gate resistor, while 24 V systems often use a gate-source Zener clamp to hold VGS within its ±20 V absolute-maximum rating.
When designing with this part, pay attention to gate-drive voltage: the device is fully enhanced only at VGS = -10 V, and at VGS = -4.5 V the Rds(on) roughly doubles. Always include a gate-source pull-down resistor (typ. 100 kΩ) to keep the device off when the driver is in high-impedance state, and respect the pulsed drain-current SOA when switching capacitive loads.
Bộ thay thế dễ dàng lắp đặt cho IPD50P04P413ATMA2 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD50P04P413ATMA2 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature.
IPD50P04P4L11ATMA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD90N06S407ATMA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB180P04P4L02ATMA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC050NE2LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD30N10S3L34ATMA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF4905STRRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD50P04P413ATMA2 Tỷ lệ tối đa & tính chất điện
| Polarity / Device Type | P-Channel MOSFET |
| Technology | OptiMOS-P2 (Trench) |
| Drain-Source Voltage (VDS) | -40 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A |
| Power Dissipation (TC=25°C, Ptot) | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Maximum Junction Temperature (TJ,max) | 175 °C |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C |
| Hộp | PG-TO252-3-313 (DPAK) |
| Kiểu lắp đặt | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs |
| Cấp MSL | 1 |
| Automotive Qualification | AEC-Q101 qualified |
| Trạng thái RoHS | Compliant |
Cấu hình chân IPD50P04P413ATMA2
| Chân 1 | Gate — MOSFET gate; drive to -10 V for full RDS(on) |
| Chân 2 | Drain — MOSFET drain; also tied to metal tab/backside thermal pad |
| Chân 3 | Source — MOSFET source (higher-voltage rail for high-side P-FET use) |
Khu vực hoạt động an toàn (DC, TC=25°C)
Ứng dụng tiêu biểu
IPD50P04P413ATMA2 phù hợp cho 7 Áp dụngs: 12 V Automotive High-Side Load Switch, Reverse-Polarity / Reverse-Battery Protection, DC Motor Half-Bridge (HVAC Blower, Seat Adjuster), USB / Infotainment Power Rail Switch, 24 V Truck / Bus System Load Switch, LED Driver High-Side Switch (Automotive Lighting), Battery Management System (BMS) Discharge Path.
12 V Automotive High-Side Load Switch
The IPD50P04P413ATMA2 is ideal for high-side switching in 12 V automotive body and lighting ECUs because its -40 V VDS rating provides ample margin above the 12 V nominal rail with headroom for jump-start (~24 V) and load-dump transients, and its P-channel polarity allows the load to be switched with a low-side-referenced gate drive. With RDS(on) of 9.2 mΩ typical at VGS = -10 V, conduction loss at 10 A continuous load is only ~0.9 W, manageable in DPAK with 1 in² of copper. AEC-Q101 qualification supports direct deployment under the hood and in cabin modules. Place the part with its drain tab on at least 1 oz 1-in² copper to keep RθJA near 40 °C/W.
Được đề xuất
Reverse-Polarity / Reverse-Battery Protection
The IPD50P04P413ATMA2 makes an excellent reverse-polarity protection switch because its P-channel polarity keeps the load-side ground reference intact while blocking reverse current. With 50 A continuous ID and 9.2 mΩ RDS(on) it can carry full automotive cranking currents (200-300 A pulsed) within its SOA, provided pulse duration is kept short. The 40 V VDS rating handles 24 V truck systems and jump-start events without avalanche breakdown. Drive the gate with a pull-up to ground through a Zener clamp and pull-down resistor; the device turns off naturally when VGS approaches zero on reverse connection.
Được đề xuất
DC Motor Half-Bridge (HVAC Blower, Seat Adjuster)
In 12 V brushed-DC motor half-bridges (e.g. HVAC blowers, seat adjusters, window lifts), the IPD50P04P413ATMA2 serves as the high-side P-channel switch. Its 9.2 mΩ RDS(on) minimizes the on-state voltage drop across the FET, and its 50 A continuous rating covers inrush current at motor startup. The P-channel configuration eliminates the bootstrap or charge-pump needed by N-channel high-side FETs, simplifying the gate-drive circuit. Use a TVS diode across drain-source to clamp inductive flyback, and respect single-pulse avalanche ratings for repetitive motor stall conditions.
Được đề xuất
USB / Infotainment Power Rail Switch
In automotive USB charging and infotainment power distribution, the IPD50P04P413ATMA2 is used as a hot-swap / load-dump tolerant switch between the 12 V battery rail and downstream buck converters feeding USB-PD controllers. Its 9.2 mΩ RDS(on) keeps conduction loss under 0.2 W at 5 A continuous, and its P-channel polarity allows the upstream 12 V rail to remain connected while the load is turned off via gate drive. The 40 V VDS rating covers cold-crank and load-dump events without latch-up.
Được đề xuất
24 V Truck / Bus System Load Switch
For 24 V commercial-vehicle and bus applications (HVAC, lighting, hydraulic controls), the IPD50P04P413ATMA2 handles the higher nominal bus with its 40 V VDS rating, providing comfortable headroom above the 24 V rail even under transient double-battery conditions. The 9.2 mΩ RDS(on) keeps conduction loss manageable at 10-20 A continuous loads, and P-channel polarity avoids the bootstrap circuitry required for N-channel high-side switches. AEC-Q101 qualification supports deployment in chassis-mounted modules subject to vibration and temperature cycling.
Được đề xuất
LED Driver High-Side Switch (Automotive Lighting)
In automotive LED headlamp and tail-lamp drivers, the IPD50P04P413ATMA2 serves as a high-side disconnect / PWM switch. The P-channel polarity allows the LED string to be tied to chassis ground - simplifying thermal management of the LED PCB. The 9.2 mΩ RDS(on) at full -10 V gate drive minimizes wasted power in the FET, and PWM dimming up to 1 kHz is supported thanks to the low Qg of the OptiMOS-P2 cell. AEC-Q101 qualification is required for under-hood and exterior lighting applications.
Được đề xuất
Battery Management System (BMS) Discharge Path
In 12 V/24 V battery-management and e-fuse circuits, the IPD50P04P413ATMA2 functions as a low-loss disconnect switch in the discharge path. Its 50 A continuous rating covers typical load currents, and the 9.2 mΩ RDS(on) keeps full-load drop under 0.5 V at 50 A. The P-channel polarity keeps the load's ground reference intact, simplifying fault detection by the BMS microcontroller. AEC-Q101 qualification supports deployment in under-hood battery modules.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD50P04P413ATMA2 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD50P04P4L11ATMA2 | IPB180P04P4L02ATMA2 | IRF4905STRRPBF |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same-brand) | Infineon (same-brand) | Infineon (formerly IR) |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO263-3 (D2PAK) - larger but DPAK-compatible footprint | TO-252 (DPAK) - same |
| Polarity | P-Channel | P-Channel (same) | P-Channel (same) | P-Channel (same) |
| VDS (Drain-Source Voltage) | -40 V | -40 V (same) | -40 V (same) | -55 V (higher rating) |
| Continuous Drain Current (TC=25°C) | 50 A | 50 A (same) | 180 A (much higher) | 74 A (higher) |
| RDS(on) typ @ VGS=-10V | 9.2 mΩ | ~9-10 mΩ (within 10%) | ~1.8 mΩ (much lower) | ~20 mΩ (higher loss) |
| Power Dissipation (TC=25°C) | 58 W | 58 W (same) | ~150 W (D2PAK) | 200 W (DPAK with proper layout) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial / non-automotive |
| Technology | OptiMOS-P2 (Trench) | OptiMOS-P2 (Trench) | OptiMOS-P2 (Trench) | HEXFET Planar (older) |
Bảo phân biệt quan trọng
- Lower RDS(on) at VGS = -10 V vs. industry-standard P-channel DPAK alternatives (vsIRF4905STRRPBF)
- AEC-Q101 automotive qualification vs. industrial-grade P-FET alternatives (vsIRF4905STRRPBF)
- OptiMOS-P2 trench technology reduces Qg and switching loss (vsIRF4905STRRPBF (planar HEXFET))
- P-channel polarity enables direct ground-referenced gate drive (vsIPD90N06S407ATMA2 (N-channel equivalent))
Ghi chú thiết kế
Estimated: at VGS=-10 V, ID=20 A, the IPD50P04P413ATMA2 dissipates I^2*R = 20^2 * 0.0092 = 3.7 W. With RθJA = 40 °C/W on a 1-oz 1-in² copper pad (JEDEC EIA/JESD51), the junction temperature rises ~148 °C above 25 °C ambient. Above 10 A continuous, expand the drain tab copper pad to at least 2 in² or add thermal vias to an internal plane to keep Tj below 150 °C. The 175 °C Tj,max rating allows some derating headroom but is not a steady-state target.
Place the IPD50P04P413ATMA2 with its drain tab on a continuous copper pour of at least 1 in², connected to the drain PCB net - this both carries the high current and provides primary thermal relief. Add 6-10 thermal vias (0.3 mm drill) under the tab to a bottom-layer ground plane for improved θJA. Keep the gate-trace short (< 5 mm) and surround it with ground to minimize dv/dt-induced turn-on; add a 10-100 Ω gate resistor to damp ringing.
Do not drive the gate of the IPD50P04P413ATMA2 directly from a 3.3 V GPIO - the device needs VGS = -10 V to reach its 9.2 mΩ RDS(on); at -4.5 V the RDS(on) roughly doubles. Use a gate-driver or NPN level-shifter. Always include a gate-source pull-down resistor (typ. 100 kΩ) to keep the FET OFF when the driver enters high-Z; failure to do so allows slow turn-on from leakage currents. Never exceed VGS = ±20 V (absolute maximum) - use a Zener or TVS clamp on the gate for 24 V systems.
For PWM dimming or motor-drive applications, the high dv/dt of the IPD50P04P413ATMA2 can couple into adjacent traces via the drain-source capacitance. Keep the gate-drive return path tight (use a Kelvin source connection if switching > 1 A at > 1 kHz), and place a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 20% of VDS. The OptiMOS-P2 cell already provides good EMI vs older planar P-FETs, so most designs need only a ferrite bead on the gate.
Use a 4-layer PCB (signal / ground / power / signal) for automotive designs with this part; the inner ground plane beneath the DPAK drain tab provides both thermal vias and a low-impedance return for switching transients. The DPAK footprint is industry-standard; ensure the drain-pad dimensions match Infineon's TO252-3-313 land pattern (recommended pad: ~6 mm × 9 mm). Avoid running sensitive analog signals (sensor, audio) directly under the FET tab to prevent capacitive coupling of switching edges.
Thông tin tuân thủ
AEC-Q101 (automotive discrete) qualified per Infineon datasheet; RoHS and REACH compliant; lead-free reflow-compatible (MSL1). Note: AEC-Q101 is the discrete-semiconductor equivalent of AEC-Q100 for ICs.
