IPN60R360P7SATMA1 - 600V 360mΩ CoolMOS P7 MOSFET | Infineon
MPN： IPN60R360P7SATMA1 ✓ 啟用中IPN60R360P7SATMA1 概覽
A superjunction MOSFET is a class of high-voltage power MOSFET that uses a deep-trench charge-balance structure to deliver much lower on-resistance per area and lower switching losses than conventional planar MOSFETs at the same voltage rating. The CoolMOS P7 family sits within the broader power MOSFET taxonomy as: power MOSFET → high-voltage MOSFET → superjunction MOSFET → CoolMOS P7. This technology is essential in modern SMPS where efficiency, thermal density, and EMI compliance must be balanced in compact form factors.
Key features include an integrated ESD protection cell, a low gate charge QG (typ. around 14 nC), fast body-diode reverse recovery suitable for hard-switching topologies, and an optimized body diode for reduced ringing in bridge configurations. The P7 generation targets ease-of-use with high dv/dt ruggedness, a wide SOA, and simple gate-drive requirements that allow designers to omit complex gate-drive circuitry.
The CoolMOS P7 architecture uses the latest charge-balance trench technology, achieving the industry's lowest RDS(on)*area figure-of-merit at 600 V. The 360 mΩ on-resistance variant is optimized for sub-100 W flyback and quasi-resonant topologies where moderate conduction losses and excellent switching performance are required. The integrated Zener-protected gate and source-pin connection improve robustness against VGS transients during production and field operation.
Typical applications include low-power SMPS adapters (USB-PD chargers, notebook adapters under 65 W), LED lighting drivers, auxiliary supplies in white goods, and standby/auxiliary rails in telecom equipment. The 600 V rating provides ample margin for 3-phase input rectified PFC front ends and for 230 V AC line-rectified flyback primary-side switches.
When designing with this part, place the gate-drive resistor close to the gate pin, use a Kelvin source connection when possible, and ensure the heatsink thermal resistance (junction-to-ambient) keeps TJ below 150°C at full load with the worst-case ambient temperature. This PG-SOT223 footprint also enables drop-in replacement in designs originally built around DPAK alternatives with proper land-pattern review.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for IPN60R360P7SATMA1 that are not directly assembled on the manufacturer datasheet alone.
直接替換替代品，適用於 IPN60R360P7SATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IPN60R360P7SATMA1 （相同外形與佔位） — 差異在於 Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
IPN60R360P7S
✅ 直接替換📋 參考替代品（不在目錄中）
IPB60R280P7ATMA1
✅ 直接替換✗ 缺貨
$0.88 / 單位
查看資料表 →IPD80R600P7ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IPD65R380E6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC076N04NDATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC019N04LSTATMA1
✅ 直接替換聯絡詢價
查看資料表 →IPN60R360P7SATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| On-Resistance RDS(on) max | 360 mΩ |
| Continuous Drain Current (ID) at TC=25°C | 9 A |
| Power Dissipation (PD) at TC=25°C | 7 W |
| Gate-Source Voltage (VGS) | ±20 V (max) |
| 工作溫度範圍 | -55°C to +150°C (TJ) |
| 封裝 | PG-SOT223 (Surface Mount) |
| 安裝類型 | Surface Mount |
| ESD Protection | Yes (integrated cell) |
| 無鹵素 | Yes (per Infineon datasheet) |
| RoHS Compliance | Compliant |
| 腳位數 | 3 functional + tab (PG-SOT223) |
| Body Diode | Integrated, fast-recovery |
IPN60R360P7SATMA1 腳位配置
| 腳位 1 | Gate — Gate drive input; connect to gate-drive resistor and pull-down |
| 腳位 2 | Drain — Drain connection; tied internally to the metal tab |
| 腳位 3 | Source — Source connection; Kelvin connection recommended for high-di/dt |
| 腳位 Tab | Drain (thermal pad) — Mechanical tab electrically connected to Drain (Pin 2); provides thermal dissipation path |
安全工作區 (DC, TC=25°C)
典型應用
IPN60R360P7SATMA1 適用於 6 應用s: Low-Power AC-DC Flyback Converter (USB-PD Charger), LED Lighting Driver (Dimmable SSL Bulb), Auxiliary / Standby Power Supply in White Goods, Telecom Auxiliary / Housekeeping Power, Industrial Auxiliary Power Supply (24V/5V Rail), Battery Charger / Power Tool Charger.
Low-Power AC-DC Flyback Converter (USB-PD Charger)
The IPN60R360P7SATMA1 is ideal for primary-side switching in sub-65 W USB-PD adapters and notebook chargers. The 600 V VDS rating easily handles the 325 V rectified peak from 230V AC mains, while 360 mΩ RDS(on) and 9 A ID deliver full-load efficiency above 90% at 65 W. Integrated ESD protection and a fast body diode reduce EMI by 3-5 dB compared to legacy 600 V planar MOSFETs, easing compliance with EN 55022 Class B. Place the part on the primary side with a 10-100 Ω gate resistor and a 100 V TVS across the drain-source for avalanche protection.
推薦
LED Lighting Driver (Dimmable SSL Bulb)
The IPN60R360P7SATMA1 is well-suited as the main switching element in isolated and non-isolated LED drivers up to 50 W. Its 600 V rating supports 230V AC rectified input for E27/A19 bulb form factors, while 360 mΩ RDS(on) keeps conduction losses below 0.5 W at 30 W output - well within the thermal envelope of an A19 bulb. The CoolMOS P7 superjunction technology delivers flicker-free dimming when paired with leading-edge or trailing-edge dimmers, and the integrated ESD cell improves field reliability against static discharge during installation.
推薦
Auxiliary / Standby Power Supply in White Goods
The IPN60R360P7SATMA1 serves as the primary switch in low-power auxiliary supplies (5-15 W) for washing machines, refrigerators, and dishwashers. The 600 V rating handles rectified 230V AC mains, while the compact PG-SOT223 package fits on densely populated control boards. CoolMOS P7's low QG (typ. ~14 nC) enables switching frequencies above 100 kHz, shrinking the transformer by 30% versus 65 kHz designs. The integrated ESD protection provides robustness against line-transient surges common in white-goods environments.
推薦
Telecom Auxiliary / Housekeeping Power
The IPN60R360P7SATMA1 is used in telecom equipment auxiliary supplies (5-30 W) that power fans, controllers, and housekeeping rails from -48V DC bus or AC mains. The 600 V rating provides margin for AC-input variants and supports hot-swap transient handling. With 7 W power dissipation capability and a surface-mount package, the P7 fits in 1U/2U rack-mount equipment where board space is limited. The integrated ESD protection is critical for field-serviceable telecom hardware exposed to repeated handling.
推薦
Industrial Auxiliary Power Supply (24V/5V Rail)
The IPN60R360P7SATMA1 is suitable for low-power industrial auxiliary supplies that derive 24 V or 5 V rails from 230V AC mains for PLCs, HMIs, and sensor interfaces. The 600 V rating handles 3-phase rectified input with adequate margin, while the 9 A continuous drain supports continuous-mode operation up to 30 W output. CoolMOS P7's high dv/dt ruggedness (>50 V/ns) simplifies EMI filter design, and the integrated body-diode reduces dead-time losses in hard-switched converters. Designed to meet IEC 61000-4-2 ESD and IEC 61000-4-5 surge immunity requirements.
推薦
Battery Charger / Power Tool Charger
The IPN60R360P7SATMA1 functions as the primary switch in 18V/36V Li-ion battery charger front-ends rated 30-100 W. The 600 V rating handles universal AC input (100-240V), and the 360 mΩ RDS(on) supports continuous charge currents up to 4 A without thermal stress. The PG-SOT223 package enables compact charger cubes for cordless drills, leaf blowers, and outdoor power tools. CoolMOS P7's integrated ESD cell provides robustness against repeated plug/unplug cycles in consumer environments.
推薦
推薦產品摘要
工程參考資料，適用於 IPN60R360P7SATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPN60R360P7S | IPB60R280P7ATMA1 | IPD80R600P7ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT223 | PG-SOT223 | PG-TO263-3 (D2PAK) | PG-TO252 (DPAK) | PG-TO252 (DPAK) |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 800 V | 650 V |
| On-Resistance RDS(on) max | 360 mΩ | 360 mΩ | 280 mΩ | 600 mΩ | 380 mΩ |
| Continuous Drain Current (ID) | 9 A | 9 A | 14 A | 5 A | 7 A |
| Technology Family | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS E6 (Superjunction) |
| Power Dissipation (TC=25°C) | 7 W | 7 W | 32 W | 13 W | 13 W |
| Mounting Type | Surface Mount (SOT223) | Surface Mount (SOT223) | Surface Mount (D2PAK) | Surface Mount (DPAK) | Surface Mount (DPAK) |
主要差異化特點
- Integrated ESD protection cell (對比IPD65R380E6ATMA1 (older E6 generation))
- Lower switching losses via P7 architecture (對比IPD65R380E6ATMA1 (CoolMOS E6))
- Higher power density in PG-SOT223 footprint (對比BSC076N04NDATMA1 (40V OptiMOS in TDSON-8))
設計說明
Estimated: At continuous 9 A ID and 360 mΩ RDS(on), conduction losses reach approximately 29 W at TC=25°C, far exceeding the 7 W package rating. In a practical flyback at 65 W output, average drain current is 0.4-0.8 A RMS, yielding conduction losses of 0.06-0.23 W. Add copper-pour heatsinking on the PG-SOT223 tab (minimum 100 mm² on top and bottom layers stitched with thermal vias) to keep junction temperature below 125°C at 50°C ambient. For higher power designs (>30 W), upgrade to D2PAK (IPB60R280P7ATMA1) which dissipates 32 W.
Place the gate-drive resistor (typically 10-47 Ω) within 5 mm of the gate pin to suppress ringing and parasitic oscillation. Use a Kelvin source connection by separating the gate-drive return path from the main power source path - this prevents source-inductance-induced gate-voltage drops that can cause shoot-through. The PG-SOT223 drain tab should be soldered to a copper pour with minimum 6 thermal vias (0.3 mm diameter) to the inner/outer plane layers for effective heat extraction.
Avoid exceeding the 600 V VDS rating under any transient condition - add a 600 V TVS or snubber across drain-source for inductive switching loads (transformer leakage inductance can produce voltage spikes 2-3x the bus voltage). Do not drive VGS above ±20 V absolute maximum. Always provide a gate-source pull-down resistor (10-100 kΩ) to prevent inadvertent turn-on during power-up. The integrated ESD cell protects against 2 kV HBM but external handling precautions are still recommended during manufacturing.
合規資訊
RoHS and halogen-free compliance per Infineon datasheet. Not AEC-Q100 qualified - this part targets consumer/industrial SMPS applications. For automotive designs, refer to Infineon automotive-grade CoolMOS variants.
