IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IQD063N15NM5SCATMA1 ✓ Hoạt độngIQD063N15NM5SCATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently commutate current in power-conversion topologies. N-channel MOSFETs conduct when the gate is pulled above the source by the gate-threshold voltage (VGS(th)). The OptiMOS™ 5 family from Infineon represents a 150 V generation that uses advanced trench technology to minimize RDS(on) and gate charge, targeting high-frequency switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages. The IQD063N15NM5SCATMA1 belongs to this family in the WHSON-8 dual-side-cooling package, a hierarchy of: N-channel MOSFET → power MOSFET → discrete semiconductor → power management.
Key features include a maximum drain-source voltage VDS of 150 V, a pulsed drain current capability supporting telecom-grade reliability, and a low gate charge QG of 48 nC at 10 V that minimizes driver losses. The device exhibits a thermal resistance from junction to case suitable for high-current handling, with a maximum power dissipation of 333 W at TC=25°C. The exposed top-side pad enables dual-side cooling, allowing either PCB copper or an attached heatsink to remove heat from both sides of the package.
Architecturally, the IQD063N15NM5SCATMA1 uses Infineon's latest-generation trench cell design, which places the gate deep in a vertical trench and shrinks the mesa width, increasing channel density per unit silicon area. This produces the headline 5.1 mΩ on-resistance and reduces the figure-of-merit (FOM = RDS(on) × QG), which directly determines switching-converter efficiency at high frequencies.
Typical applications include 48 V telecom point-of-load converters, server and data-center bus converters, synchronous rectification in isolated DC-DC bricks, battery protection and hot-swap circuits in industrial 24-72 V systems, and motor-drive half-bridges in e-mobility auxiliary loads. The 150 V rating provides ample margin above 48 V nominal buses and below standard telecom-surge profiles.
When designing with this device, prioritize minimizing parasitic source inductance to unlock the full switching-speed capability of the OptiMOS™ 5 cell. Use a gate-driver IC with at least 4 V gate-source headroom above VGS(th) for full enhancement, and pair it with a properly rated bootstrap or isolated supply for high-side use.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, giving engineers a faster BOM validation path for high-current 150 V switching stages.
Bộ thay thế dễ dàng lắp đặt cho IQD063N15NM5SCATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQD063N15NM5SCATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
IQE220N15NM5CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQDH35N03LM5SCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC151N08NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC037N12NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQD063N15NM5SCATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 151 A |
| Continuous Drain Current (ID) at TA=25°C | 14.4 A |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΩ (typ) |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) |
| Total Gate Charge (QG) at VGS=10V | 48 nC |
| Input Capacitance (Ciss) | 3.6 nF |
| Output Capacitance (Coss) | 900 pF |
| Reverse Transfer Capacitance (Crss) | 21 pF |
| Maximum Power Dissition (PD) at TC=25°C | 333 W |
| Maximum Power Dissition (PD) at TA=25°C | 3 W |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C |
| Hộp | PG-WHSON-8-U02 (WHSON-8 with exposed pad) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
Cấu hình chân IQD063N15NM5SCATMA1
| Chân 1 | Gate — Gate drive input |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Source — Source connection |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Drain — Drain connection (also exposed pad) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IQD063N15NM5SCATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom Point-of-Load Converter, Server and Data-Center Bus Converter, Synchronous Rectification in Isolated DC-DC Brick, Industrial 24-72V Battery Protection and Hot-Swap, Motor-Drive Half-Bridge for Auxiliary E-Mobility Loads, Solar Inverter and Energy Storage Power Stage.
48V Telecom Point-of-Load Converter
The IQD063N15NM5SCATMA1 fits 48V telecom point-of-load (POL) converters because its 150V VDS rating provides full surge margin above the 48V nominal bus (which can spike to 80-100V during hot-plug events), while its 5.1 mΩ RDS(on) minimizes conduction loss at the 14.4A ambient current typical of brick-style POL stages. Placed in the synchronous-rectifier position of a half-bridge or full-bridge topology, the part's 48 nC total gate charge keeps driver losses modest at 100-200 kHz switching frequencies, and the exposed WHSON-8 pad dissipates the 333W maximum case-rated power to the PCB copper with minimal thermal gradient.
Được đề xuất
Server and Data-Center Bus Converter
The IQD063N15NM5SCATMA1 is well suited for 48V-to-POL intermediate bus converters in server and hyperscale data-center power architectures, where the 150V rating covers 48V nominal plus full transient margin and the 5.1 mΩ RDS(on) supports 100-150A continuous current at the case-rated 151A. The exposed-pad WHSON-8 enables direct cold-plate or heatsink attachment for high-density rack power shelves where PCB area is at a premium. Compared with older 100V or 120V parts, the 150V VDS provides the headroom required for 80V telecom-style surge profiles without sacrificing conduction efficiency.
Được đề xuất
Synchronous Rectification in Isolated DC-DC Brick
In isolated 36-75V input telecom brick converters, the IQD063N15NM5SCATMA1 serves as the secondary-side synchronous rectifier MOSFET. Its 150V rating covers reflected-voltage transients from the primary-side switch node, while the 5.1 mΩ RDS(on) minimizes body-diode-replacement conduction loss at full 100W+ brick output power. The 48 nC QG enables 200 kHz+ switching frequencies with manageable driver loss, and the exposed WHSON-8 pad connects directly to the brick's copper output ground pour. The result is a 1-2% efficiency improvement over equivalent 100V parts in 48V-input bricks.
Được đề xuất
Industrial 24-72V Battery Protection and Hot-Swap
The IQD063N15NM5SCATMA1 fits industrial 24V, 48V, and 72V battery hot-swap and protection circuits thanks to its 150V VDS rating covering inrush transients on inductive battery buses and the 5.1 mΩ RDS(on) minimizing steady-state dissipation during normal operation. Placed as the main pass-MOSFET in an eFuse or hot-swap controller circuit, the part's 151A case-rated current handles the full battery short-circuit current limit window, while the WHSON-8 exposed pad dissipates the inrush energy into the PCB copper. Compared with smaller 40-80V hot-swap MOSFETs, the 150V rating removes the need for transient-voltage-suppression circuitry.
Được đề xuất
Motor-Drive Half-Bridge for Auxiliary E-Mobility Loads
The IQD063N15NM5SCATMA1 functions as the low-side or high-side switch in motor-drive half-bridges for auxiliary e-mobility loads such as 48V eSteering, eCooling pumps, and eTurbo actuators. The 150V VDS rating handles the 48V bus plus inductive kick-back spikes typical of brushed and brushless DC motors, while the 5.1 mΩ RDS(on) keeps I²R losses low in continuous 50-100A motor-current applications. The exposed-pad WHSON-8 enables direct attachment to chassis or motor housing for optimal thermal transfer in the high-vibration automotive underhood environment.
Được đề xuất
Solar Inverter and Energy Storage Power Stage
The IQD063N15NM5SCATMA1 supports 48-96V battery energy-storage and small-scale solar inverter power stages where the 150V VDS rating covers the battery open-circuit voltage plus full MPPT overshoot, while the 5.1 mΩ RDS(on) minimizes conduction loss during sustained grid-tie discharge cycles. Used in the buck or boost converter stage interfacing the battery to a 400V DC bus, the exposed-pad WHSON-8 dissipates the 333W maximum case-rated power into a copper spreader or attached heatsink. Compared with 100V MOSFETs that would require active clamping, the 150V VDS provides passive margin against 96V battery open-circuit overshoot.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQD063N15NM5SCATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQE220N15NM5CGSCATMA1 | IQDH35N03LM5SCATMA1 | ISC015N06NM5ATMA1 | ISC151N08NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHSON-8 | PG-WHSON-8 - same | PG-WHSON-8 - same | PG-WHSON-8 - same | PG-WHSON-8 - same | PG-WHSON-8 - same |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 30 V | 60 V | 80 V | 120 V |
| RDS(on) at VGS=10V | 5.1 mΩ | 22 mΩ | 3.5 mΩ | 1.5 mΩ | 15.1 mΩ | 3.7 mΩ |
| Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 |
Bảo phân biệt quan trọng
- Dual-side cooling exposed-pad WHSON-8 enables 333W case-rated power dissipation (vsISC015N06NM5ATMA1)
- 150V VDS provides 3x voltage margin above 48V telecom nominal (vsIQDH35N03LM5SCATMA1)
- Lower RDS(on) at higher VDS than OptiMOS 6 120V equivalent (vsISC037N12NM6ATMA1)
Ghi chú thiết kế
Estimated: At ID=14.4A continuous and RDS(on)=5.1 mΩ, conduction loss is approximately 1.06W. With 333W maximum case-rated power dissipation and the WHSON-8 exposed pad, ensure the PCB copper pour is at least 1 square inch connected to the drain pad. For continuous currents above 50A at TC=25°C, attach an additional heatsink or copper block to the top metal of the dual-side-cooling PG-WHSON-8 package to keep junction temperature below 150°C. The thermal resistance junction-to-case is typically 0.45 C/W for this outline.
The PG-WHSON-8 exposed pad must be soldered to a continuous copper pour on the drain side of the PCB, with thermal vias (typically 0.3mm diameter, 1mm pitch, 4x4 array minimum) connecting to inner-layer copper for heat spreading. Keep the source-return loop area minimal by placing the gate-driver return close to the source pins (2-7). A 6 cm² copper area on a 40 mm × 40 mm × 1.5 mm FR4 epoxy PCB is recommended per the Infineon datasheet test conditions for sustained full-power operation.
Do not exceed the 150V VDS rating - even brief overshoot during turn-off transients in inductive switching stages can cause avalanche breakdown. Use a gate-source resistor (typically 10 kΩ) to prevent accidental turn-on from Miller coupling, and ensure the gate-driver supply voltage stays below the 20V VGS absolute maximum. Never operate the gate below VGS(th)=3.8V or the part will operate in linear mode and dissipate excessive power.
Minimize parasitic source inductance by using Kelvin-source connection if the package supports it, or by routing the gate-drive return directly to the source pins rather than through the drain copper. Place the gate-drive resistor within 5mm of the gate pin and use a 10-100 Ω gate-series resistor to dampen ringing. The input capacitance Ciss of 3.6 nF requires a peak gate current of several amps during turn-on, so use a dedicated gate-driver IC (such as 2EDN7533RXTMA1 or similar) rather than a logic-level GPIO.
Thông tin tuân thủ
RoHS compliant per Infineon product page and JLCPCB listing (2026-09-15). REACH compliant per EU regulations. Not AEC-Q100 qualified - for automotive designs choose an AEC-Q100-qualified OptiMOS variant. Halogen-free status not explicitly stated in the verified data.
