IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
부품 번호: IQD063N15NM5SCATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.1 | $4.10 |
| 10 | $3.65 | $36.50 |
| 100 | $3.05 | $305.00 |
| 500 | $2.65 | $1,325.00 |
| 1,000 | $2.35 | $2,350.00 |
IQD063N15NM5SCATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently commutate current in power-conversion topologies. N-channel MOSFETs conduct when the gate is pulled above the source by the gate-threshold voltage (VGS(th)). The OptiMOS™ 5 family from Infineon represents a 150 V generation that uses advanced trench technology to minimize RDS(on) and gate charge, targeting high-frequency switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages. The IQD063N15NM5SCATMA1 belongs to this family in the WHSON-8 dual-side-cooling package, a hierarchy of: N-channel MOSFET → power MOSFET → discrete semiconductor → power management.
Key features include a maximum drain-source voltage VDS of 150 V, a pulsed drain current capability supporting telecom-grade reliability, and a low gate charge QG of 48 nC at 10 V that minimizes driver losses. The device exhibits a thermal resistance from junction to case suitable for high-current handling, with a maximum power dissipation of 333 W at TC=25°C. The exposed top-side pad enables dual-side cooling, allowing either PCB copper or an attached heatsink to remove heat from both sides of the package.
Architecturally, the IQD063N15NM5SCATMA1 uses Infineon's latest-generation trench cell design, which places the gate deep in a vertical trench and shrinks the mesa width, increasing channel density per unit silicon area. This produces the headline 5.1 mΩ on-resistance and reduces the figure-of-merit (FOM = RDS(on) × QG), which directly determines switching-converter efficiency at high frequencies.
Typical applications include 48 V telecom point-of-load converters, server and data-center bus converters, synchronous rectification in isolated DC-DC bricks, battery protection and hot-swap circuits in industrial 24-72 V systems, and motor-drive half-bridges in e-mobility auxiliary loads. The 150 V rating provides ample margin above 48 V nominal buses and below standard telecom-surge profiles.
When designing with this device, prioritize minimizing parasitic source inductance to unlock the full switching-speed capability of the OptiMOS™ 5 cell. Use a gate-driver IC with at least 4 V gate-source headroom above VGS(th) for full enhancement, and pair it with a properly rated bootstrap or isolated supply for high-side use.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, giving engineers a faster BOM validation path for high-current 150 V switching stages.
드롭인 대체품: IQD063N15NM5SCATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IQD063N15NM5SCATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IQE220N15NM5CGSCATMA1
✅ 드롭인✓ 재고 있음
$2.18 / 개
데이터시트 보기 →IQDH35N03LM5SCATMA1
✅ 드롭인✓ 재고 있음
$2.05 / 개
데이터시트 보기 →ISC015N06NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →ISC151N08NM6ATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →ISC037N12NM6ATMA1
✅ 드롭인✓ 재고 있음
$3.62 / 개
데이터시트 보기 →IQD063N15NM5SCATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 151 A |
| Continuous Drain Current (ID) at TA=25°C | 14.4 A |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΩ (typ) |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) |
| Total Gate Charge (QG) at VGS=10V | 48 nC |
| Input Capacitance (Ciss) | 3.6 nF |
| Output Capacitance (Coss) | 900 pF |
| Reverse Transfer Capacitance (Crss) | 21 pF |
| Maximum Power Dissition (PD) at TC=25°C | 333 W |
| Maximum Power Dissition (PD) at TA=25°C | 3 W |
| 동작 온도 범위 | -55°C to +175°C |
| 패키지 | PG-WHSON-8-U02 (WHSON-8 with exposed pad) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
IQD063N15NM5SCATMA1 핀 구성
| 핀 1 | Gate — Gate drive input |
| 핀 2 | Source — Source connection |
| 핀 3 | Source — Source connection |
| 핀 4 | Source — Source connection |
| 핀 5 | Source — Source connection |
| 핀 6 | Source — Source connection |
| 핀 7 | Source — Source connection |
| 핀 8 | Drain — Drain connection (also exposed pad) |
안전 동작 영역 (DC)
일반적인 애플리케이션
IQD063N15NM5SCATMA1 적합 용도: 6 애플리케이션s: 48V Telecom Point-of-Load Converter, Server and Data-Center Bus Converter, Synchronous Rectification in Isolated DC-DC Brick, Industrial 24-72V Battery Protection and Hot-Swap, Motor-Drive Half-Bridge for Auxiliary E-Mobility Loads, Solar Inverter and Energy Storage Power Stage.
48V Telecom Point-of-Load Converter
The IQD063N15NM5SCATMA1 fits 48V telecom point-of-load (POL) converters because its 150V VDS rating provides full surge margin above the 48V nominal bus (which can spike to 80-100V during hot-plug events), while its 5.1 mΩ RDS(on) minimizes conduction loss at the 14.4A ambient current typical of brick-style POL stages. Placed in the synchronous-rectifier position of a half-bridge or full-bridge topology, the part's 48 nC total gate charge keeps driver losses modest at 100-200 kHz switching frequencies, and the exposed WHSON-8 pad dissipates the 333W maximum case-rated power to the PCB copper with minimal thermal gradient.
추천
Server and Data-Center Bus Converter
The IQD063N15NM5SCATMA1 is well suited for 48V-to-POL intermediate bus converters in server and hyperscale data-center power architectures, where the 150V rating covers 48V nominal plus full transient margin and the 5.1 mΩ RDS(on) supports 100-150A continuous current at the case-rated 151A. The exposed-pad WHSON-8 enables direct cold-plate or heatsink attachment for high-density rack power shelves where PCB area is at a premium. Compared with older 100V or 120V parts, the 150V VDS provides the headroom required for 80V telecom-style surge profiles without sacrificing conduction efficiency.
추천
Synchronous Rectification in Isolated DC-DC Brick
In isolated 36-75V input telecom brick converters, the IQD063N15NM5SCATMA1 serves as the secondary-side synchronous rectifier MOSFET. Its 150V rating covers reflected-voltage transients from the primary-side switch node, while the 5.1 mΩ RDS(on) minimizes body-diode-replacement conduction loss at full 100W+ brick output power. The 48 nC QG enables 200 kHz+ switching frequencies with manageable driver loss, and the exposed WHSON-8 pad connects directly to the brick's copper output ground pour. The result is a 1-2% efficiency improvement over equivalent 100V parts in 48V-input bricks.
추천
Industrial 24-72V Battery Protection and Hot-Swap
The IQD063N15NM5SCATMA1 fits industrial 24V, 48V, and 72V battery hot-swap and protection circuits thanks to its 150V VDS rating covering inrush transients on inductive battery buses and the 5.1 mΩ RDS(on) minimizing steady-state dissipation during normal operation. Placed as the main pass-MOSFET in an eFuse or hot-swap controller circuit, the part's 151A case-rated current handles the full battery short-circuit current limit window, while the WHSON-8 exposed pad dissipates the inrush energy into the PCB copper. Compared with smaller 40-80V hot-swap MOSFETs, the 150V rating removes the need for transient-voltage-suppression circuitry.
추천
Motor-Drive Half-Bridge for Auxiliary E-Mobility Loads
The IQD063N15NM5SCATMA1 functions as the low-side or high-side switch in motor-drive half-bridges for auxiliary e-mobility loads such as 48V eSteering, eCooling pumps, and eTurbo actuators. The 150V VDS rating handles the 48V bus plus inductive kick-back spikes typical of brushed and brushless DC motors, while the 5.1 mΩ RDS(on) keeps I²R losses low in continuous 50-100A motor-current applications. The exposed-pad WHSON-8 enables direct attachment to chassis or motor housing for optimal thermal transfer in the high-vibration automotive underhood environment.
추천
Solar Inverter and Energy Storage Power Stage
The IQD063N15NM5SCATMA1 supports 48-96V battery energy-storage and small-scale solar inverter power stages where the 150V VDS rating covers the battery open-circuit voltage plus full MPPT overshoot, while the 5.1 mΩ RDS(on) minimizes conduction loss during sustained grid-tie discharge cycles. Used in the buck or boost converter stage interfacing the battery to a 400V DC bus, the exposed-pad WHSON-8 dissipates the 333W maximum case-rated power into a copper spreader or attached heatsink. Compared with 100V MOSFETs that would require active clamping, the 150V VDS provides passive margin against 96V battery open-circuit overshoot.
추천
추천 제품 요약
엔지니어링 참조 데이터: IQD063N15NM5SCATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IQE220N15NM5CGSCATMA1 | IQDH35N03LM5SCATMA1 | ISC015N06NM5ATMA1 | ISC151N08NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHSON-8 | PG-WHSON-8 - same | PG-WHSON-8 - same | PG-WHSON-8 - same | PG-WHSON-8 - same | PG-WHSON-8 - same |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 30 V | 60 V | 80 V | 120 V |
| RDS(on) at VGS=10V | 5.1 mΩ | 22 mΩ | 3.5 mΩ | 1.5 mΩ | 15.1 mΩ | 3.7 mΩ |
| Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 |
주요 차별점
- Dual-side cooling exposed-pad WHSON-8 enables 333W case-rated power dissipation (vs ISC015N06NM5ATMA1)
- 150V VDS provides 3x voltage margin above 48V telecom nominal (vs IQDH35N03LM5SCATMA1)
- Lower RDS(on) at higher VDS than OptiMOS 6 120V equivalent (vs ISC037N12NM6ATMA1)
설계 노트
Estimated: At ID=14.4A continuous and RDS(on)=5.1 mΩ, conduction loss is approximately 1.06W. With 333W maximum case-rated power dissipation and the WHSON-8 exposed pad, ensure the PCB copper pour is at least 1 square inch connected to the drain pad. For continuous currents above 50A at TC=25°C, attach an additional heatsink or copper block to the top metal of the dual-side-cooling PG-WHSON-8 package to keep junction temperature below 150°C. The thermal resistance junction-to-case is typically 0.45 C/W for this outline.
The PG-WHSON-8 exposed pad must be soldered to a continuous copper pour on the drain side of the PCB, with thermal vias (typically 0.3mm diameter, 1mm pitch, 4x4 array minimum) connecting to inner-layer copper for heat spreading. Keep the source-return loop area minimal by placing the gate-driver return close to the source pins (2-7). A 6 cm² copper area on a 40 mm × 40 mm × 1.5 mm FR4 epoxy PCB is recommended per the Infineon datasheet test conditions for sustained full-power operation.
Do not exceed the 150V VDS rating - even brief overshoot during turn-off transients in inductive switching stages can cause avalanche breakdown. Use a gate-source resistor (typically 10 kΩ) to prevent accidental turn-on from Miller coupling, and ensure the gate-driver supply voltage stays below the 20V VGS absolute maximum. Never operate the gate below VGS(th)=3.8V or the part will operate in linear mode and dissipate excessive power.
Minimize parasitic source inductance by using Kelvin-source connection if the package supports it, or by routing the gate-drive return directly to the source pins rather than through the drain copper. Place the gate-drive resistor within 5mm of the gate pin and use a 10-100 Ω gate-series resistor to dampen ringing. The input capacitance Ciss of 3.6 nF requires a peak gate current of several amps during turn-on, so use a dedicated gate-driver IC (such as 2EDN7533RXTMA1 or similar) rather than a logic-level GPIO.
규정 준수 정보
RoHS compliant per Infineon product page and JLCPCB listing (2026-09-15). REACH compliant per EU regulations. Not AEC-Q100 qualified - for automotive designs choose an AEC-Q100-qualified OptiMOS variant. Halogen-free status not explicitly stated in the verified data.
