IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
부품 번호: IQDH35N03LM5CGATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.32 | $2.32 |
| 10 | $2.1 | $21.00 |
| 100 | $1.86 | $186.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.45 | $1,450.00 |
IQDH35N03LM5CGATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a sufficient gate-to-source voltage is applied. Within the discrete semiconductor hierarchy, MOSFETs sit beneath transistors, which belong to the broader class of active discrete components. The OptiMOS 5 technology employed here represents Infineon's fifth-generation trench MOSFET platform, delivering industry-leading figure-of-merit (FOM = RDS(on) × Qg) for switching power conversion applications.
Key differentiating features include ultra-low RDS(on) of 0.35 mΩ at 10 V VGS, monolithic integrated Schottky-like body diode for reduced reverse recovery losses, and an exposed-top metal pad for top-side cooling. The PG-TTFN-9-U02 package provides a low-profile, halogen-free footprint with gull-wing leads and a wide drain tab for vertical current flow and minimal package inductance.
The device is engineered using Infineon's OptiMOS 5 30V platform, which utilizes a deep-trench cell structure combined with a thin wafer backside metallization process. This architecture reduces both conduction and switching losses, making the part highly suitable for high-frequency synchronous rectification at frequencies above 500 kHz.
Typical applications include synchronous rectification in isolated DC-DC converters, point-of-load (POL) converters for servers and telecom, hot-swap and OR-ing functions in 12 V industrial bus systems, motor drive switching stages in battery-powered robotics, and high-current USB-PD power paths. The low gate charge supports fast switching transitions for high-frequency buck and buck-boost topologies.
When designing with this MOSFET, pay close attention to PCB layout - the drain tab and source pads must be connected to wide copper pours to achieve the rated thermal performance. Use Kelvin-source connection for the gate drive to suppress source-bounce and ringing at high di/dt.
This page synthesizes distributor pricing, drop-in alternatives, application-specific design considerations, and comparison data not found in the manufacturer datasheet alone.
드롭인 대체품: IQDH35N03LM5CGATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IQDH35N03LM5CGATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), Series.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IQDH35N03LM5CG
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSZ065N03LSATMA1
✅ 드롭인✓ 재고 있음
$0.38 / 개
데이터시트 보기 →ISC011N03L5SATMA1
✅ 드롭인✓ 재고 있음
$0.47 / 개
데이터시트 보기 →IRFH8318TRPBF
✅ 드롭인✓ 재고 있음
$0.48 / 개
데이터시트 보기 →BSC066N06NSATMA1
✅ 드롭인✓ 재고 있음
$0.49 / 개
데이터시트 보기 →BSC0902NSATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →IQDH35N03LM5CGATMA1 최대 정격 & 전기적 특성
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 66 A |
| Pulsed Drain Current (IDM) at Tc | 700 A |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.35 mΩ (typical at VGS=10 V) |
| Power Dissipation (PD) at Ta | 2.5 W |
| Power Dissipation (PD) at Tc | 278 W |
| 동작 온도 범위 | -55 °C to +175 °C |
| 패키지 | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 |
| RoHS 상태 | Compliant |
| 할로겐 프리 | Yes |
| Channel Type | N-Channel |
| Technology | OptiMOS 5 trench MOSFET |
IQDH35N03LM5CGATMA1 핀 구성
| 핀 1 | GND — Ground / thermal pad connection |
| 핀 2 | S — Source (Kelvin) |
| 핀 3 | S — Source (Kelvin) |
| 핀 4 | G — Gate |
| 핀 5 | NC — Not connected (per datasheet) |
| 핀 6 | S — Source (Kelvin) |
| 핀 7 | S — Source (Kelvin) |
| 핀 8 | D — Drain (exposed pad / top-side) |
| 핀 9 | D — Drain (exposed pad / top-side) |
안전 동작 영역 (DC)
일반적인 애플리케이션
IQDH35N03LM5CGATMA1 적합 용도: 7 애플리케이션s: Synchronous Rectification in DC-DC Converters, Point-of-Load (POL) Buck Converters, Hot-Swap and OR-ing Functions, Battery-Powered Motor Drive Switching, USB Power Delivery (USB-PD) High-Current Paths, Industrial 12 V / 24 V Bus Switching, Telecom and Server Power Conversion.
Synchronous Rectification in DC-DC Converters
The IQDH35N03LM5CGATMA1 is an excellent choice for the synchronous rectifier (low-side) position in 12 V input isolated and non-isolated DC-DC converters. Its 0.35 mΩ RDS(on) at VGS=10 V minimizes conduction loss even at 60 A continuous current, while the OptiMOS 5 low Qrr body diode reduces dead-time switching losses. Placed between the 12 V bus and the transformer/inductor secondary, the device enables >97% efficiency at switching frequencies of 300-500 kHz typical of telecom and server SMPS designs. The PG-TTFN-9-U02 footprint allows direct PCB layout reuse between 30 V and 40 V platform variants.
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Point-of-Load (POL) Buck Converters
For 12 V bus-to-1 V or lower POL conversion powering server CPUs, GPUs, and ASICs, the IQDH35N03LM5CGATMA1 serves as the low-side synchronous switch in multiphase buck topologies. Its 30 V rating provides ample margin for 12 V transients while the 0.35 mΩ RDS(on) keeps per-phase conduction loss under 1 W at 30 A. The PQFN 5x6 mm² footprint is the industry-standard for VRM power stages, allowing direct drop-in replacement across generations. Designers value the device's low Qgd/Qgs ratio which minimizes dead-time and body-diode conduction during load-step transients.
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Hot-Swap and OR-ing Functions
The IQDH35N03LM5CGATMA1's 700 A pulsed current capability and 30 V VDS rating make it well suited for 12 V hot-swap and OR-ing applications in enterprise server and telecom power shelves. Its 0.35 mΩ RDS(on) holds voltage drop and I²R dissipation below 1 W even at 50 A continuous load, minimizing heat-sinking requirements on the backplane. Placed in-line between the 12 V distribution bus and the load, with a gate-resistor controlled turn-on for inrush current limiting, the device provides fast fault isolation. The PQFN footprint supports the high-density PCB layouts typical of OR-ing controllers.
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Battery-Powered Motor Drive Switching
In battery-powered robotics, e-bike controllers, and 12-24 V cordless tools, the IQDH35N03LM5CGATMA1 functions as the low-side switch in three-phase half-bridge motor drivers. Its 66 A continuous rating covers motor currents up to ~40 A RMS with proper thermal design, while the OptiMOS 5 body diode reduces losses during recirculation events. The low Qg simplifies gate-driver selection, allowing direct MOSFET drive from 12 V gate-driver ICs. The PQFN 5x6 footprint enables compact motor-drive PCBAs for BLDC and PMSM motors used in industrial automation.
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USB Power Delivery (USB-PD) High-Current Paths
The IQDH35N03LM5CGATMA1 supports the high-current 20 V / 5 A (100 W) paths required for USB Power Delivery 3.1 Extended Power Range (EPR) applications. Its 30 V VDS handles the 20 V PD bus with adequate transient margin, while the 0.35 mΩ RDS(on) limits voltage drop on the Source/Sink power path to less than 35 mV at 100 W. Used in laptop chargers, docking stations, and USB-PD hubs, the device enables compact PCB designs in PQFN 5x6 mm². The OptiMOS 5 technology's low Qrr body diode improves efficiency during fast load-step transitions typical of USB-PD negotiated profile changes.
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Industrial 12 V / 24 V Bus Switching
Industrial PLCs, factory automation controllers, and rugged computing platforms benefit from the IQDH35N03LM5CGATMA1's robustness in 24 V nominal DC distribution systems where sustained voltages stay within 28 V. Its 30 V rating provides 2 V of margin above the 24 V bus transient envelope, while the PQFN 5x6 footprint simplifies integration with industrial-grade PCB stackups. The 66 A continuous rating supports high-power actuator and motor-driver stages. Designers appreciate the part's compatibility with the wide Infineon OptiMOS 5 ecosystem, allowing unified BOM across multiple industrial product variants.
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Telecom and Server Power Conversion
In -48 V telecom rectifier intermediate bus architectures (IBAs), the IQDH35N03LM5CGATMA1 is used at the 12 V intermediate bus converter (IBC) output stage where 30 V devices are appropriate. Its low RDS(on) and fast body-diode recovery deliver high efficiency at the 100-200 kHz switching frequencies typical of digital IBC topologies. The 5x6 PQFN footprint matches the industry-standard power-stage layout used by leading telecom OEM reference designs. Combined with Infineon's gate-driver and controller portfolio, this part supports design-in for hyperscale data center power delivery.
추천
추천 제품 요약
엔지니어링 참조 데이터: IQDH35N03LM5CGATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IQDH35N03LM5CG | BSZ065N03LSATMA1 | ISC011N03L5SATMA1 | IRFH8318TRPBF | BSC066N06NSATMA1 | BSC0902NSATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TTFN-9-U02 (PQFN 5x6 mm²) - same | PG-TTFN-9-U02 (PQFN 5x6 mm²) - same | PG-TTFN-9-U02 (PQFN 5x6 mm²) - same | PQFN 5x6 (8EP) - same footprint | PG-TTFN-9-U02 - same | PG-TTFN-9-U02 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-to-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 60 V | 30 V |
| On-Resistance RDS(on) at VGS=10V | 0.35 mΩ | 0.35 mΩ | 0.65 mΩ | 1.1 mΩ | 0.6 mΩ | 6.6 mΩ | 9.0 mΩ |
| Continuous Drain Current (ID) | 66 A (Ta) | 66 A | 40 A | 37 A | 50 A | 70 A | 31 A |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 5 | OptiMOS 5 | IR HEXFET | OptiMOS 2 | OptiMOS |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- Industry-lowest RDS(on) in PQFN 5x6 at 30V VDS (vs BSZ065N03LSATMA1)
- Higher continuous current rating at Ta (vs ISC011N03L5SATMA1)
- OptiMOS 5 generation with integrated Schottky-like body diode (vs IRFH8318TRPBF)
- 30 V rating matches 12 V application envelope with minimal margin (vs BSC066N06NSATMA1)
설계 노트
Estimated: at 50 A continuous drain current and RDS(on) of 0.35 mΩ, conduction loss equals I² × RDS(on) = 50² × 0.00035 = 0.875 W. Power dissipation of 2.5 W at Ta (25 °C ambient) is the absolute ceiling, so the part requires substantial copper area on the drain tab to spread heat. According to the Infineon datasheet, the PG-TTFN-9-U02 package thermal resistance from junction to ambient (θJA) with 1 sq inch of 2-oz copper is approximately 50 °C/W. With proper top-side cooling, the package can sustain 278 W at Tc - enabling operation at much higher drain currents in pulsed-mode switching regulators.
Layout for the PG-TTFN-9-U02 demands top-side cooling and an extensive copper pour on the drain pad. The exposed drain pad must be soldered to a thermal via array connecting to inner-layer copper heat-spreaders. Per Infineon's application note on PQFN layout, place at least 4 thermal vias in the drain pad with 0.3 mm drill / 0.5 mm pad, and minimize the source trace inductance to less than 1 nH by using a Kelvin-source connection at the gate-driver ground return. The 5x6 mm² footprint is small for the current rating, so PCB designers must use 2-oz copper or heavier on outer layers.
Do not operate the IQDH35N03LM5CGATMA1 above VGS = ±20 V - the thin gate oxide will rupture. At 12 V VCC gate-drive, add a 10 kΩ gate pull-down resistor to ensure the MOSFET stays off during controller startup. Avoid using the device on 24 V industrial buses where sustained transients can exceed 30 V; derate to a 24 V-rated part instead. The OptiMOS 5 monolithic body diode has improved reverse recovery but is not a true Schottky - in dead-time-critical synchronous rectification at >500 kHz, use an external Schottky or carefully tune the controller's adaptive dead-time to minimize body-diode conduction.
For high di/dt switching (>5 A/ns), the source inductance must be minimized. Use a Kelvin-source connection (pin 2/3/6/7) for the gate return, separating it from the power source current path. Place the gate-driver IC physically close to the gate pin (pin 4) with a 10 Ω gate resistor to dampen ringing. Per the Infineon OptiMOS application handbook, the maximum recommended loop inductance for a 30 V buck stage is <2 nH to keep voltage overshoot below 40 V during switching transients.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. Halogen-free per PG-TTFN-9-U02 package declaration. Not AEC-Q100 qualified - this is a commercial/industrial grade part; for automotive applications, choose an AEC-Q100 qualified Infineon OptiMOS variant.
