BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon
MPN: BSC066N06NSATMA1 ✓ Hoạt độngBSC066N06NSATMA1 Tóm tắt
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device (Gate, Drain, Source) that conducts current when a positive gate-to-source voltage exceeds the threshold. Power MOSFETs sit within the broader category of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs, and are the workhorse switching element in modern switched-mode power supplies (SMPS), motor drives, and battery protection circuits because they switch faster and dissipate less energy than bipolar transistors or relays.
Key features include an ultra-low RDS(on) of 6.6 mΩ at VGS=10 V, a logic-level compatible gate threshold (typ. 1.7 V, fully enhanced at 4.5 V), and a repetitive avalanche-rated body diode. The PG-TDSON-8-6 package exposes the drain pad for direct thermal coupling to a top-side copper pour, achieving a junction-to-case thermal resistance of 1.3 °C/W and supporting 46 W continuous dissipation at Tc=25°C.
The device is built on Infineon's OptiMOS 5 60 V process, which uses a trench-gate cell architecture combined with a low-resistance substrate. This yields both lower RDS(on) per unit area and superior switching FOM (RDS(on) × Qg) compared with planar MOSFETs of equivalent die size, making it suitable for high-frequency buck/boost converters where switching losses dominate.
Typical applications include synchronous rectification in 48 V telecom and server intermediate bus converters, high-current DC-DC point-of-load regulators, eBike and power tool motor drives, and battery management system (BMS) charge/discharge switches. The wide SOA also supports hot-swap and OR-ing functions in redundant power architectures.
When designing with this part, prioritize a top-side thermal copper pour tied to the exposed drain pad, and minimize the gate-drive loop inductance to prevent ringing above VGS(max)=±20 V. The device's logic-level threshold allows direct drive from 5 V PWM controllers, but a dedicated gate driver is recommended above 50 kHz switching frequency to achieve clean edges and minimize switching loss.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a one-stop reference for BOM qualification and second-source decisions.
Bộ thay thế dễ dàng lắp đặt cho BSC066N06NSATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC066N06NSATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
BSC0906NSATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC0901NSATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC0902NSIATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC016N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC076N06NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC052N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC066N06NSATMA1 Tỷ lệ tối đa & tính chất điện
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A |
| Continuous Drain Current (ID) at TC=100°C | 45 A |
| Pulsed Drain Current (IDM) | 256 A |
| Gate-Source Voltage (VGS) max | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) |
| Total Gate Charge (Qg) | 26 nC (typ) |
| Power Dissipation (PD) at TC=25°C | 46 W |
| Power Dissipation (PD) at TA=25°C | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W |
| Nhiệt độ mối nối hoạt động | -55°C to +150°C |
| Hộp | PG-TDSON-8-6 (TDSON EP) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 |
| Trạng thái RoHS | Compliant |
| Technology | OptiMOS 5 60 V trench-gate |
Cấu hình chân BSC066N06NSATMA1
| Chân 1 | Source — Source connection (kelvin) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Drain — Drain connection (also exposed pad) |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
BSC066N06NSATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom Intermediate Bus Converter, Server VRM Point-of-Load Converter, eBike and Power Tool Motor Drive, Battery Management System (BMS) Switch, Hot-Swap and OR-ing Controller, Solar Micro-Inverter and MPPT Stage.
48V Telecom Intermediate Bus Converter
The BSC066N06NSATMA1 fits 48 V telecom intermediate bus converters (IBC) because its 60 V VDS rating provides a 25% derating margin above the 48 V nominal, sufficient to absorb transient spikes during load steps and input surges. Its 6.6 mΩ RDS(on) at VGS=10 V keeps synchronous-rectifier conduction loss low - at 30 A the part dissipates about 6 W versus 8 W for a 9 mΩ alternative. The TDSON-8-6 exposed-pad package couples directly to a top-side copper pour, achieving RθJC of 1.3 °C/W and supporting 46 W continuous dissipation. Compared with planar MOSFETs, the OptiMOS 5 trench-gate process also delivers lower Qg, which reduces switching loss at 100-200 kHz switching frequencies typical in IBC designs.
Được đề xuất
Server VRM Point-of-Load Converter
The BSC066N06NSATMA1 is well-matched to server VRM point-of-load (POL) converters delivering 1.0 V to 3.3 V rails at 25-40 A from a 12 V intermediate bus. The 6.6 mΩ RDS(on) keeps high-side and low-side conduction loss around 50-80 mW per MOSFET at 30 A, supporting multi-phase VR topologies where efficiency at partial load is critical. The logic-level gate threshold (typ. 1.7 V) enables direct drive from multiphase PWM controllers such as IR35201 or ISL95808, eliminating dedicated gate drivers. The exposed-pad package also aids PCB-top thermal dissipation in compact server mezzanine cards where bottom-side cooling is unavailable.
Được đề xuất
eBike and Power Tool Motor Drive
In eBike controller and cordless power tool drives, the BSC066N06NSATMA1 serves as the low-side or high-side switch in a 3-phase bridge, leveraging its 64 A continuous rating at TC=25°C to handle peak motor currents of 30-40 A without thermal derating. The 60 V VDS rating is sufficient for 36 V and 48 V battery packs, leaving headroom for back-EMF spikes up to 2x battery voltage during regenerative braking. The 6.6 mΩ RDS(on) keeps conduction loss under 5 W per MOSFET at peak current, allowing air-cooled designs without a heatsink. The TDSON-8-6 package also withstands the vibration and thermal-cycling stresses of mobile applications, with an operating temperature range of -55°C to +150°C.
Được đề xuất
Battery Management System (BMS) Switch
The BSC066N06NSATMA1 is suitable as a charge/discharge MOSFET in lithium-ion battery management systems for 24 V-48 V packs, including e-mobility and stationary energy storage applications. Its 6.6 mΩ RDS(on) at full enhancement keeps full-load conduction loss below 8 W at 35 A continuous - critical for reducing total system heat in sealed enclosures. The 60 V VDS rating provides adequate margin above a fully-charged 48 V pack (54.6 V), while the ±20 V VGS rating tolerates the gate transients typical in half-bridge topologies. Bidirectional current capability also makes it useful as a reverse-polarity protection switch or a battery-isolation FET.
Được đề xuất
Hot-Swap and OR-ing Controller
In hot-swap and OR-ing applications for redundant -48 V or 12 V power architectures, the BSC066N06NSATMA1 functions as the series pass element, with its 60 V VDS comfortably derating 48 V rails and its 64 A continuous rating handling full load during input transients. The low RDS(on) reduces steady-state power dissipation during normal operation, while the wide SOA handles inrush current events when downstream bulk capacitors charge. The logic-level gate threshold allows direct drive from hot-swap controllers without level-shifting circuits. Compared with planar MOSFETs of equivalent die, the OptiMOS 5 process also provides faster switching, improving the speed of OR-ing turn-off to minimize reverse-current flow when a failed source is disconnected.
Được đề xuất
Solar Micro-Inverter and MPPT Stage
The BSC066N06NSATMA1 is appropriate for the synchronous-rectifier stage in solar micro-inverters and MPPT converters operating from 30-50 V PV input. The 60 V VDS gives adequate margin above the 50 V maximum-power-point range, including transient spikes from grid-side events. The 6.6 mΩ RDS(on) keeps conduction loss below 2% at 30 A, supporting peak efficiencies above 97% for the DC-DC stage. The TDSON-8-6 package handles the outdoor temperature swings of -40°C to +125°C at the inverter enclosure. The wide SOA also tolerates the body-diode conduction cycles during MPPT sweep operation, which is critical for converter reliability.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC066N06NSATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC0906NSATMA1 | BSC0901NSATMA1 | BSC0902NSIATMA1 | BSC016N06NSATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| RDS(on) at VGS=10V | 6.6 mΩ | 9 mΩ | 9 mΩ | 9 mΩ | 1.6 mΩ | 7.6 mΩ |
| Continuous Drain Current (TC=25°C) | 64 A | 70 A | 70 A | 70 A | 100 A | 50 A |
| Gate Threshold Voltage (typ) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| Technology / Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 |
Bảo phân biệt quan trọng
- Lower RDS(on) than direct alternative BSC0906NSATMA1 (vsBSC0906NSATMA1)
- Same package as higher-current BSC016N06NSATMA1 for design reuse (vsBSC016N06NSATMA1)
- OptiMOS 5 process improves switching FOM over older OptiMOS 3 (vsBSC076N06NS3GATMA1)
- Higher VDS margin than 40 V OptiMOS alternatives (vsBSC052N08NS5ATMA1 (80 V variant))
Ghi chú thiết kế
The PG-TDSON-8-6 package requires a top-side thermal copper pour tied to the exposed drain pad (pin 8). At 30 A continuous drain current and RDS(on)=6.6 mΩ, conduction loss is approximately 6 W. Estimated: assuming a 1 square-inch copper pour with thermal resistance of 30 °C/W and 25°C ambient, junction temperature rise is roughly 180°C - exceeding the 150°C rating. Derate to 20 A continuous or use a 2-3 square-inch pour plus forced airflow to maintain reliable operation.
Minimize the gate-drive loop inductance by routing the gate drive return path directly to the source pins (pins 1-3, 5-7) closest to the gate pin (pin 4). Place a 10 Ω gate resistor in series and a 10 kΩ pull-down on the gate to prevent inadvertent turn-on during supply transients. Keep the high-dV/dt drain node trace short and isolated from the gate trace to avoid Miller-induced turn-on.
Do not exceed the ±20 V VGS maximum. The BSC066N06NSATMA1 has a relatively low VGS(max) compared with some competitors (typically ±30 V). Verify that any 12 V gate drive transients from long gate-drive traces stay below ±20 V, and add a gate-source Zener clamp of 16-18 V if your driver has high dV/dt. Also confirm the drain tab is soldered to the PCB pour; an unsoldered exposed pad doubles the junction-to-ambient thermal resistance.
For best efficiency use 10 V gate drive, not 4.5 V logic-level drive. While the threshold is 1.7 V, RDS(on) at VGS=4.5 V is roughly 2-3× higher than at VGS=10 V due to incomplete channel formation in the trench. For synchronous-rectifier applications above 100 kHz, a dedicated gate driver such as IRS21271 or ISL2110 is recommended over direct microcontroller drive to achieve clean edges and reduce switching loss.
In half-bridge or synchronous buck topologies, the body diode of the low-side MOSFET conducts during dead-time intervals. The OptiMOS 5 process features a fast body diode with reverse-recovery time in the 30-50 ns range, but at high dV/dt the diode can still inject displacement current into the gate via the Miller capacitance Cgd. Use a minimum 20 ns dead-time and consider adding a Schottky diode in parallel with the low-side MOSFET for very high-frequency designs (>300 kHz).
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. The standard BSC066N06NSATMA1 is not AEC-Q100 qualified - for automotive applications, request the BSC066N06NSATMA1-Q1 variant from Infineon.
