ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon
MPN: ISC009N06NM6ATMA1 ✓ Hoạt độngISC009N06NM6ATMA1 Tóm tắt
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch or amplify electronic signals in power applications. MOSFETs sit at the bottom of a hierarchy that reads: MOSFET -> power transistor -> discrete semiconductor -> power management IC. Within the N-channel MOSFET category, low-voltage (≤100 V) parts such as the ISC009N06NM6 are the workhorse switches for synchronous buck converters, half-bridges, and OR-ing functions in 12 V/24 V/48 V systems.
Key electrical specifications include a 60 V drain-to-source breakdown (V<sub>(BR)DSS</sub>), typical R<sub>DS(on)</sub> in the sub-1 mΩ class (per the OptiMOS 6 60 V family), ultra-low gate charge Q<sub>g</sub>, and a 3 W steady-state dissipation on the PCB (Ta) rising to 221 W with case reference (Tc). The PG-TDSON-8 footprint exposes the drain through a large thermal pad, keeping R<sub>thJA</sub> low enough to deliver 40 A continuous with proper copper layout.
OptiMOS 6 uses Infineon's latest trench-gate silicon process that simultaneously optimizes R<sub>DS(on)</sub>·Q<sub>g</sub>, R<sub>DS(on)</sub>·Q<sub>oss</sub>, and R<sub>DS(on)</sub>·Q<sub>rr</sub> trade-offs, resulting in lower switching-node ringing and reduced reverse-recovery losses in hard-switched topologies. This makes it well suited to high-frequency DC-DC and motor-drive stages where every 10 kHz of switching frequency rise demands proportional efficiency gains.
Typical applications for the ISC009N06NM6ATMA1 include synchronous rectification in 48 V telecom and server DC-DC converters, high-current buck regulators in industrial automation, battery management and protection in 12 V/24 V Li-ion packs, motor drive and H-bridge low-side switches in robotics, and USB-PD / notebook adapter secondary-side rectification.
When designing with this MOSFET, prioritize minimizing source-loop inductance in the PCB layout and use a Kelvin-source connection when available in the gate-drive circuit. Pair it with an Infineon EiceDRIVER gate driver (such as the 1EDN71x6 family) to obtain matched propagation delay and clean Miller plateau control. Confirm SOA against your worst-case transient (cold-crank, inrush, short-circuit) using the datasheet's Diagram 2 de-rating curve.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, giving engineers a single source to compare sourcing options and evaluate second-source risk for the ISC009N06NM6ATMA1 footprint.
Bộ thay thế dễ dàng lắp đặt cho ISC009N06NM6ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC009N06NM6ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, Product Family, Technology, Drain-Source Voltage (VDS).
ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISZ072N06NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC151N08NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQEH50NE2LM7ZCGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC009N06NM6ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 60 V |
| Kiểu transitor | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta=25C | 40 A |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A |
| Power Dissition (PD) at Ta=25C | 3 W |
| Power Dissipation (PD) at Tc=25C | 221 W |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8 (3.3 x 3.3 mm) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes |
Cấu hình chân ISC009N06NM6ATMA1
| Chân 1 | Source — Source connection (low-side return) |
| Chân 2 | Source — Source connection (low-side return) |
| Chân 3 | Source — Source connection (low-side return) |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain connection (load side) |
| Chân 6 | Drain — Drain connection (load side) |
| Chân 7 | Drain — Drain connection (load side) |
| Chân 8 | Drain — Drain connection (load side) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
ISC009N06NM6ATMA1 phù hợp cho 6 Áp dụngs: 48 V Telecom Synchronous Rectification, 12 V/24 V Battery Management Protection, Industrial Brushless DC Motor Drive, USB-PD Notebook Adapter SR Stage, High-Current Hot-Swap / OR-ing Controller, Automotive 12 V LED Driver Boost Switch.
48 V Telecom Synchronous Rectification
The ISC009N06NM6ATMA1 serves as the low-side synchronous rectifier in 48 V telecom isolated DC-DC converters (e.g. quarter-brick, half-brick modules). Its 60 V V(BR)DSS provides ample headroom above 48 V nominal plus 10% tolerance and 1-2 V ringing margin, while the sub-milliohm RDS(on) at VGS=10 V keeps conduction loss below 1% of throughput power at 40 A load. The PG-TDSON-8 footprint exposes the drain through a large thermal pad that ties directly to the bus-bar copper pour, dissipating the ~3-5 W steady-state loss without a heatsink. Compared with discrete Schottky rectifiers, the ISC009N06NM6ATMA1 cuts rectification losses by 50-70%, raising overall converter efficiency by 0.5-1 percentage point at 300-500 kHz switching.
Được đề xuất
12 V/24 V Battery Management Protection
The ISC009N06NM6ATMA1 functions as the low-side disconnect switch in 12 V and 24 V Li-ion battery management systems (BMS). Its 60 V rating tolerates automotive load-dump transients on 24 V trucks, while the 40 A continuous / 344 A pulsed rating handles inrush from precharge capacitors and short-circuit isolation events. The PG-TDSON-8 package's exposed drain pad creates a wide SOA envelope for short-circuit clearing within 1 ms, which is essential for pack-level safety. Compared to relays, the ISC009N06NM6ATMA1 enables silent switching, faster fault response (<10 µs), and zero mechanical wear - extending BMS service life in industrial e-mobility applications.
Được đề xuất
Industrial Brushless DC Motor Drive
The ISC009N06NM6ATMA1 is used as the low-side FET in 24 V/48 V three-phase brushless DC (BLDC) motor drives for industrial pumps, fans, and small robots. With 60 V V(BR)DSS and 40 A continuous rating, it can drive sub-1 kW motors directly from a 24 V or 48 V bus without paralleling devices. The OptiMOS 6 silicon delivers very low Qrr, which reduces dead-time losses in the 20-50 kHz PWM range typical of sinusoidal FOC motor control. The PG-TDSON-8 footprint enables compact inverter PCB layouts where space is at a premium; the exposed drain pad also doubles as a thermal via landing pattern to keep Tj below 125 °C at full load.
Được đề xuất
USB-PD Notebook Adapter SR Stage
The ISC009N06NM6ATMA1 is employed in the secondary-side synchronous rectification (SR) stage of 100 W-240 W USB-PD notebook adapters. Its 60 V rating covers the 19-28 V output range plus leakage ringing from the primary-side flyback, and the ultra-low RDS(on) minimizes conduction loss in continuous-conduction-mode (CCM) operation. The OptiMOS 6 platform's Qg·RDS(on) figure-of-merit is approximately 25% better than OptiMOS 5, which translates into 0.5-1% efficiency gain at 100-300 kHz switching. Compared to Schottky diode pairs, the ISC009N06NM6ATMA1 eliminates the 0.5 V forward-voltage drop, raising adapter efficiency to >93% and reducing heat-sink size.
Được đề xuất
High-Current Hot-Swap / OR-ing Controller
The ISC009N06NM6ATMA1 acts as the main pass-FET in 48 V server and telecom hot-swap / OR-ing controllers. Its 60 V rating handles 48 V nominal plus tolerance and transients, while the 40 A continuous rating covers 2 kW+ redundant power shelves. The PG-TDSON-8 footprint allows tight paralleling on the motherboard for higher-current rails if needed. Compared to older P-channel OR-ing solutions, the ISC009N06NM6ATMA1 delivers lower forward drop, faster fault isolation (<10 µs), and bidirectional current blocking - critical for high-availability datacenter power shelves where inrush and reverse-current faults must be cleared without disturbing adjacent rails.
Được đề xuất
Automotive 12 V LED Driver Boost Switch
The ISC009N06NM6ATMA1 serves as the main switching FET in 12 V automotive LED driver boost converters for headlamp and daytime-running-light modules. Its 60 V V(BR)DSS tolerates load-dump transients up to 35 V on the 12 V automotive bus, while the 40 A continuous rating handles multi-LED string currents up to 5 A at high PWM dimming duty. The PG-TDSON-8 footprint is pin-compatible with automotive-qualified IAUCN-prefixed variants, enabling a single PCB layout that supports both industrial and AEC-Q101 grades. Compared to older planar MOSFETs, the ISC009N06NM6ATMA1 cuts switching losses by 30% at 200 kHz, allowing smaller magnetics in space-constrained lamp housings.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC009N06NM6ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC015N06NM5ATMA1 | ISZ072N06NM6ATMA1 | ISC151N08NM6ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| V(BR)DSS (Drain-to-Source) | 60 V | 60 V | 60 V | 80 V | 60 V |
| Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 | OptiMOS 7 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Bảo phân biệt quan trọng
- Sub-milliohm RDS(on) in compact PG-TDSON-8 (vsISC015N06NM5ATMA1 (OptiMOS 5))
- Lower gate charge than ISZ072N06NM6ATMA1 (vsISZ072N06NM6ATMA1)
- 60V rating with industrial-grade availability (vsISC151N08NM6ATMA1)
- OptiMOS 6 generational performance uplift (vsIQEH50NE2LM7ZCGATMA1 (OptiMOS 7))
Ghi chú thiết kế
Estimated: At ID=40 A continuous on the JEDEC 2s2p test board with RthJA ~50 °C/W, the ISC009N06NM6ATMA1 can dissipate ~3 W at Ta=25 °C before derating. On a 6 cm² copper drain pour (per datasheet condition), the RthJA drops to ~25 °C/W, allowing up to 5-6 W steady-state dissipation. For sustained 40 A operation, design the drain copper pour to be at least 6 cm² on the top layer with thermal vias to internal planes. Estimate junction rise with PD × RthJA; keep Tj below 125 °C for industrial reliability or below 150 °C for consumer-grade reliability.
The PG-TDSON-8 exposed drain pad must be soldered to a continuous copper pour that ties directly to the drain trace. Use an array of thermal vias (0.3 mm drill, 0.5-0.6 mm pitch) under the pad to spread heat to inner copper layers. Minimize source-loop inductance by routing the gate-drive return on the top layer directly above the source pad - this reduces VGS ringing during fast switching transitions and prevents spurious turn-on from Miller current injection.
Keep the gate-drive loop area as small as possible (<0.5 cm²) and place a gate-source resistor (10-100 kΩ) directly between gate and source pins, within 2 mm of the IC, to provide a defined off-state and prevent unintended turn-on from dv/dt. Add a small ferrite bead or 1-10 Ω resistor in series with the gate driver output to damp the gate-drive LC resonance. The PG-TDSON-8 source pins (1-3) should all be soldered and tied together on the PCB to minimize common-source inductance.
Do not exceed VGS=±20 V absolute maximum - use a gate-source Zener clamp (15-18 V) for protection against transients. Never operate the ISC009N06NM6ATMA1 above 60 V VDS, including ringing - measure actual switch-node voltage with a low-inductance probe to confirm margin. Avoid using the device as a constant-current source in linear mode; it is optimized for switching applications. When paralleling multiple devices, add individual source resistors (1-5 mΩ) to force current sharing, or rely on matched R<sub>DS(on)</sub> from the same manufacturing lot.
Thông tin tuân thủ
RoHS compliant and halogen-free per Infineon product page. Standard ISC009N06NM6ATMA1 is industrial-grade (not AEC-Q101 qualified); for automotive use select the IAUCN-prefixed variant. REACH compliance per EU declaration.
