ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon
Référence : ISC009N06NM6ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.28 | $128,00 |
| 500 | $1.05 | $525,00 |
| 1 000 | $0.86 | $860,00 |
| 5 000 | $0.68 | $3 400,00 |
ISC009N06NM6ATMA1 Présentation
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch or amplify electronic signals in power applications. MOSFETs sit at the bottom of a hierarchy that reads: MOSFET -> power transistor -> discrete semiconductor -> power management IC. Within the N-channel MOSFET category, low-voltage (≤100 V) parts such as the ISC009N06NM6 are the workhorse switches for synchronous buck converters, half-bridges, and OR-ing functions in 12 V/24 V/48 V systems.
Key electrical specifications include a 60 V drain-to-source breakdown (V<sub>(BR)DSS</sub>), typical R<sub>DS(on)</sub> in the sub-1 mΩ class (per the OptiMOS 6 60 V family), ultra-low gate charge Q<sub>g</sub>, and a 3 W steady-state dissipation on the PCB (Ta) rising to 221 W with case reference (Tc). The PG-TDSON-8 footprint exposes the drain through a large thermal pad, keeping R<sub>thJA</sub> low enough to deliver 40 A continuous with proper copper layout.
OptiMOS 6 uses Infineon's latest trench-gate silicon process that simultaneously optimizes R<sub>DS(on)</sub>·Q<sub>g</sub>, R<sub>DS(on)</sub>·Q<sub>oss</sub>, and R<sub>DS(on)</sub>·Q<sub>rr</sub> trade-offs, resulting in lower switching-node ringing and reduced reverse-recovery losses in hard-switched topologies. This makes it well suited to high-frequency DC-DC and motor-drive stages where every 10 kHz of switching frequency rise demands proportional efficiency gains.
Typical applications for the ISC009N06NM6ATMA1 include synchronous rectification in 48 V telecom and server DC-DC converters, high-current buck regulators in industrial automation, battery management and protection in 12 V/24 V Li-ion packs, motor drive and H-bridge low-side switches in robotics, and USB-PD / notebook adapter secondary-side rectification.
When designing with this MOSFET, prioritize minimizing source-loop inductance in the PCB layout and use a Kelvin-source connection when available in the gate-drive circuit. Pair it with an Infineon EiceDRIVER gate driver (such as the 1EDN71x6 family) to obtain matched propagation delay and clean Miller plateau control. Confirm SOA against your worst-case transient (cold-crank, inrush, short-circuit) using the datasheet's Diagram 2 de-rating curve.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, giving engineers a single source to compare sourcing options and evaluate second-source risk for the ISC009N06NM6ATMA1 footprint.
Alternatives de remplacement direct pour ISC009N06NM6ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec ISC009N06NM6ATMA1 (même facteur de forme et même empreinte) — différant par Package, Operating Temperature Range, Product Family, Technology, Drain-Source Voltage (VDS).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
ISC015N06NM5ATMA1
✅ Remplacement direct✓ En stock
$0.62 / unité
Voir la fiche technique →ISZ072N06NM6ATMA1
✅ Remplacement direct✓ En stock
$0.38 / unité
Voir la fiche technique →ISC151N08NM6ATMA1
✅ Remplacement direct✓ En stock
$0.78 / unité
Voir la fiche technique →IQEH50NE2LM7ZCGATMA1
✅ Remplacement direct✓ En stock
$1.42 / unité
Voir la fiche technique →ISC009N06NM6ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 60 V |
| Type de transistor | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta=25C | 40 A |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A |
| Power Dissition (PD) at Ta=25C | 3 W |
| Power Dissipation (PD) at Tc=25C | 221 W |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Plage de température de fonctionnement | -55 °C to +175 °C |
| Boîtier | PG-TDSON-8 (3.3 x 3.3 mm) |
| Type de montage | Surface Mount |
| Niveau MSL | MSL1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
Configuration des broches de ISC009N06NM6ATMA1
| Broche 1 | Source — Source connection (low-side return) |
| Broche 2 | Source — Source connection (low-side return) |
| Broche 3 | Source — Source connection (low-side return) |
| Broche 4 | Gate — Gate drive input |
| Broche 5 | Drain — Drain connection (load side) |
| Broche 6 | Drain — Drain connection (load side) |
| Broche 7 | Drain — Drain connection (load side) |
| Broche 8 | Drain — Drain connection (load side) |
Zone de fonctionnement sûr (DC)
Applications typiques
ISC009N06NM6ATMA1 convient pour 6 applications: 48 V Telecom Synchronous Rectification, 12 V/24 V Battery Management Protection, Industrial Brushless DC Motor Drive, USB-PD Notebook Adapter SR Stage, High-Current Hot-Swap / OR-ing Controller, Automotive 12 V LED Driver Boost Switch.
48 V Telecom Synchronous Rectification
The ISC009N06NM6ATMA1 serves as the low-side synchronous rectifier in 48 V telecom isolated DC-DC converters (e.g. quarter-brick, half-brick modules). Its 60 V V(BR)DSS provides ample headroom above 48 V nominal plus 10% tolerance and 1-2 V ringing margin, while the sub-milliohm RDS(on) at VGS=10 V keeps conduction loss below 1% of throughput power at 40 A load. The PG-TDSON-8 footprint exposes the drain through a large thermal pad that ties directly to the bus-bar copper pour, dissipating the ~3-5 W steady-state loss without a heatsink. Compared with discrete Schottky rectifiers, the ISC009N06NM6ATMA1 cuts rectification losses by 50-70%, raising overall converter efficiency by 0.5-1 percentage point at 300-500 kHz switching.
Recommandé
12 V/24 V Battery Management Protection
The ISC009N06NM6ATMA1 functions as the low-side disconnect switch in 12 V and 24 V Li-ion battery management systems (BMS). Its 60 V rating tolerates automotive load-dump transients on 24 V trucks, while the 40 A continuous / 344 A pulsed rating handles inrush from precharge capacitors and short-circuit isolation events. The PG-TDSON-8 package's exposed drain pad creates a wide SOA envelope for short-circuit clearing within 1 ms, which is essential for pack-level safety. Compared to relays, the ISC009N06NM6ATMA1 enables silent switching, faster fault response (<10 µs), and zero mechanical wear - extending BMS service life in industrial e-mobility applications.
Recommandé
Industrial Brushless DC Motor Drive
The ISC009N06NM6ATMA1 is used as the low-side FET in 24 V/48 V three-phase brushless DC (BLDC) motor drives for industrial pumps, fans, and small robots. With 60 V V(BR)DSS and 40 A continuous rating, it can drive sub-1 kW motors directly from a 24 V or 48 V bus without paralleling devices. The OptiMOS 6 silicon delivers very low Qrr, which reduces dead-time losses in the 20-50 kHz PWM range typical of sinusoidal FOC motor control. The PG-TDSON-8 footprint enables compact inverter PCB layouts where space is at a premium; the exposed drain pad also doubles as a thermal via landing pattern to keep Tj below 125 °C at full load.
Recommandé
USB-PD Notebook Adapter SR Stage
The ISC009N06NM6ATMA1 is employed in the secondary-side synchronous rectification (SR) stage of 100 W-240 W USB-PD notebook adapters. Its 60 V rating covers the 19-28 V output range plus leakage ringing from the primary-side flyback, and the ultra-low RDS(on) minimizes conduction loss in continuous-conduction-mode (CCM) operation. The OptiMOS 6 platform's Qg·RDS(on) figure-of-merit is approximately 25% better than OptiMOS 5, which translates into 0.5-1% efficiency gain at 100-300 kHz switching. Compared to Schottky diode pairs, the ISC009N06NM6ATMA1 eliminates the 0.5 V forward-voltage drop, raising adapter efficiency to >93% and reducing heat-sink size.
Recommandé
High-Current Hot-Swap / OR-ing Controller
The ISC009N06NM6ATMA1 acts as the main pass-FET in 48 V server and telecom hot-swap / OR-ing controllers. Its 60 V rating handles 48 V nominal plus tolerance and transients, while the 40 A continuous rating covers 2 kW+ redundant power shelves. The PG-TDSON-8 footprint allows tight paralleling on the motherboard for higher-current rails if needed. Compared to older P-channel OR-ing solutions, the ISC009N06NM6ATMA1 delivers lower forward drop, faster fault isolation (<10 µs), and bidirectional current blocking - critical for high-availability datacenter power shelves where inrush and reverse-current faults must be cleared without disturbing adjacent rails.
Recommandé
Automotive 12 V LED Driver Boost Switch
The ISC009N06NM6ATMA1 serves as the main switching FET in 12 V automotive LED driver boost converters for headlamp and daytime-running-light modules. Its 60 V V(BR)DSS tolerates load-dump transients up to 35 V on the 12 V automotive bus, while the 40 A continuous rating handles multi-LED string currents up to 5 A at high PWM dimming duty. The PG-TDSON-8 footprint is pin-compatible with automotive-qualified IAUCN-prefixed variants, enabling a single PCB layout that supports both industrial and AEC-Q101 grades. Compared to older planar MOSFETs, the ISC009N06NM6ATMA1 cuts switching losses by 30% at 200 kHz, allowing smaller magnetics in space-constrained lamp housings.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour ISC009N06NM6ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | ISC015N06NM5ATMA1 | ISZ072N06NM6ATMA1 | ISC151N08NM6ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| V(BR)DSS (Drain-to-Source) | 60 V | 60 V | 60 V | 80 V | 60 V |
| Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 | OptiMOS 7 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Principaux différenciateurs
- Sub-milliohm RDS(on) in compact PG-TDSON-8 (vs ISC015N06NM5ATMA1 (OptiMOS 5))
- Lower gate charge than ISZ072N06NM6ATMA1 (vs ISZ072N06NM6ATMA1)
- 60V rating with industrial-grade availability (vs ISC151N08NM6ATMA1)
- OptiMOS 6 generational performance uplift (vs IQEH50NE2LM7ZCGATMA1 (OptiMOS 7))
Notes de conception
Estimated: At ID=40 A continuous on the JEDEC 2s2p test board with RthJA ~50 °C/W, the ISC009N06NM6ATMA1 can dissipate ~3 W at Ta=25 °C before derating. On a 6 cm² copper drain pour (per datasheet condition), the RthJA drops to ~25 °C/W, allowing up to 5-6 W steady-state dissipation. For sustained 40 A operation, design the drain copper pour to be at least 6 cm² on the top layer with thermal vias to internal planes. Estimate junction rise with PD × RthJA; keep Tj below 125 °C for industrial reliability or below 150 °C for consumer-grade reliability.
The PG-TDSON-8 exposed drain pad must be soldered to a continuous copper pour that ties directly to the drain trace. Use an array of thermal vias (0.3 mm drill, 0.5-0.6 mm pitch) under the pad to spread heat to inner copper layers. Minimize source-loop inductance by routing the gate-drive return on the top layer directly above the source pad - this reduces VGS ringing during fast switching transitions and prevents spurious turn-on from Miller current injection.
Keep the gate-drive loop area as small as possible (<0.5 cm²) and place a gate-source resistor (10-100 kΩ) directly between gate and source pins, within 2 mm of the IC, to provide a defined off-state and prevent unintended turn-on from dv/dt. Add a small ferrite bead or 1-10 Ω resistor in series with the gate driver output to damp the gate-drive LC resonance. The PG-TDSON-8 source pins (1-3) should all be soldered and tied together on the PCB to minimize common-source inductance.
Do not exceed VGS=±20 V absolute maximum - use a gate-source Zener clamp (15-18 V) for protection against transients. Never operate the ISC009N06NM6ATMA1 above 60 V VDS, including ringing - measure actual switch-node voltage with a low-inductance probe to confirm margin. Avoid using the device as a constant-current source in linear mode; it is optimized for switching applications. When paralleling multiple devices, add individual source resistors (1-5 mΩ) to force current sharing, or rely on matched R<sub>DS(on)</sub> from the same manufacturing lot.
Informations de conformité
RoHS compliant and halogen-free per Infineon product page. Standard ISC009N06NM6ATMA1 is industrial-grade (not AEC-Q101 qualified); for automotive use select the IAUCN-prefixed variant. REACH compliance per EU declaration.
