ISC019N08NM7ATMA1 - 80V 1.9mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: ISC019N08NM7ATMA1 ✓ Hoạt độngISC019N08NM7ATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled majority-carrier switch whose conduction is modulated by the gate-to-source voltage, enabling fast switching and high current density. MOSFETs are the dominant switching element in modern DC-DC converters, motor drivers, and ORing circuits, and Infineon's OptiMOS 7 family is engineered for the next generation of telecom, server, and automotive power systems. The ISC019N08NM7ATMA1 inherits Infineon's latest 80 V platform, offering improved Figure of Merit (RDS(on) × QG) versus prior OptiMOS generations.
Key differentiating specifications include RDS(on) of 1.9 mΩ at VGS=10 V, avalanche-rated single-pulse robustness, a thermally enhanced PG-TDSON-8-43 package with exposed pad, and operating junction temperatures up to 175 °C. The 80 V drain-to-source rating gives ample headroom above 48 V telecom and 60 V solar-string rails. The device is fully RoHS compliant and uses halogen-free molding compound per IEC 61249-2-21.
Technically, the ISC019N08NM7ATMA1 leverages Infineon's advanced trench cell geometry to minimize both conduction and switching losses, making it well suited for high-frequency synchronous rectification. The SuperSO8 footprint delivers very low parasitic source inductance, which directly improves switching-edge cleanliness and reduces voltage overshoot during hard commutation. Designers benefit from this when operating at 200 kHz+ in LLC and buck-derived topologies.
Typical applications include 48 V telecom bus converters, server and data-center intermediate-bus synchronous rectification, solar micro-inverters and DC optimizers, eMobility auxiliary power, and hot-swap / ORing circuits on 48 V backplanes. The 209 A pulsed rating also supports short-duration inrush and fault-clearing events. Compared with planar MOSFETs of the same RDS(on), OptiMOS 7 typically cuts gate charge by 30%, simplifying gate-drive and timing budgets.
Design consideration: the SuperSO8 package dissipates most of its heat through the drain tab; use sufficient copper pour (>=6 cm² on FR4) and thermal vias to the opposite layer to realize the full 188 W TC rating. Designers should also keep gate-loop area minimal and place the gate resistor close to the device to prevent parasitic turn-on.
This page synthesizes Infineon datasheet values, distributor pricing as of 2026-09-15, and drop-in SuperSO8 alternatives - practical engineering context not found on a single manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho ISC019N08NM7ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC019N08NM7ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Continuous Drain Current (ID) at TA=25C, Drain-to-Source Voltage (VDS), Gate Threshold Voltage VGS(th) typ.
ISC151N08NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE050N08NM5CGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC019N08NM7ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC019N08NM7ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| Kiểu transitor | N-Channel MOSFET |
| Technology | Trench MOSFET (OptiMOS 7) |
| Drain-to-Source Voltage (VDS) | 80 V |
| Drain Current (ID), TC=25°C | 209 A |
| Drain Current (ID), TA=25°C | 26 A |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΩ |
| Power Dissipation (PD), TC=25°C | 188 W |
| Power Dissipation (PD), TA=25°C | 3 W (6 cm² FR4) |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8-43 (SuperSO8) |
| Kiểu lắp đặt | Surface Mount |
| Đông trùng haogen | Yes |
| Trạng thái RoHS | Compliant |
Cấu hình chân ISC019N08NM7ATMA1
| Chân 1 | Source — Source connection (internally connected to pin 2, pin 3 and the exposed pad tab in SuperSO8) |
| Chân 2 | Source — Source connection (internally tied to pin 1, pin 3) |
| Chân 3 | Source — Source connection (internally tied to pin 1, pin 2) |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain connection (internally tied to pin 6, pin 7, pin 8 and exposed pad) |
| Chân 6 | Drain — Drain connection (internally tied to pin 5, pin 7, pin 8) |
| Chân 7 | Drain — Drain connection (internally tied to pin 5, pin 6, pin 8) |
| Chân 8 | Drain — Drain connection (internally tied to pin 5, pin 6, pin 7) |
ISC019N08NM7ATMA1 Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
ISC019N08NM7ATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom Bus Converter, Server / Data-Center Intermediate Bus, Solar Micro-Inverter / DC Optimizer, eMobility Auxiliary Power, Hot-Swap / ORing Controller, Industrial Synchronous Buck / Half-Bridge.
48V Telecom Bus Converter
The ISC019N08NM7ATMA1 is ideally suited as the synchronous-rectifier MOSFET in 48 V telecom bus converters feeding downstream 12 V or 5 V rails. Its 80 V VDS rating provides generous headroom above the 48 V nominal bus (including transients to 60 V), while the 1.9 mΩ typical RDS(on) at VGS=10 V minimizes conduction loss in the high-current secondary-side loop. The SuperSO8 package keeps the source inductance low, reducing switching-edge overshoot at 200 kHz+ switching frequencies typical of LLC and resonant topologies. Compared with planar MOSFETs of the same RDS(on), OptiMOS 7 reduces gate charge by ~30%, simplifying gate-drive and timing budgets in high-density converter designs.
Được đề xuất
Server / Data-Center Intermediate Bus
In 48 V-to-PoL intermediate bus converters (IBC) for hyperscale servers, the ISC019N08NM7ATMA1 replaces older 80 V planar MOSFETs and immediately drops conduction losses by 30-50% due to its 1.9 mΩ RDS(on) in SuperSO8. The 209 A TC-rated silicon capability handles peak loads during GPU/CPU boost events, and the 175 °C TJ max supports dense PCB layouts with limited airflow. The OptiMOS 7 platform also enables higher switching frequencies (300-500 kHz) for smaller magnetics. For dual-stage IBC architectures this MOSFET pairs naturally with 25 V-rated parts on the secondary side for best overall efficiency.
Được đề xuất
Solar Micro-Inverter / DC Optimizer
The ISC019N08NM7ATMA1 is a strong choice for the high-side and low-side switches in solar micro-inverters and module-level DC power optimizers operating from 30-60 V PV strings. Its 80 V VDS comfortably exceeds the maximum open-circuit voltage of a 60 V PV string at -10 °C, while the 1.9 mΩ RDS(on) ensures high conversion efficiency under partial-load conditions typical of residential solar. The SuperSO8 footprint allows compact power-dense layouts that fit within the module-level enclosure, and the halogen-free / RoHS-compliant molding compound meets IEC 61249-2-21 requirements for solar deployment.
Được đề xuất
eMobility Auxiliary Power
In 48 V eMobility auxiliary converters (electric power steering, brake-by-wire, HVAC blowers), the ISC019N08NM7ATMA1 delivers the high-current switching capability required by 3-5 kW stages. Its 80 V VDS gives safety margin over 48 V bus transients to 60 V, and the 1.9 mΩ RDS(on) keeps dissipation under 20 W at 100 A continuous, simplifying thermal management on a vibration-loaded PCB. The SuperSO8 package is mechanically robust and supports conformal coating and under-body automotive environments when paired with the AEC-Q101 screening option.
Được đề xuất
Hot-Swap / ORing Controller
For 48 V backplane ORing and hot-swap circuits in telecom and server PSUs, the ISC019N08NM7ATMA1 provides the low RDS(on) needed to minimize steady-state voltage drop and the 209 A TC rating to clear downstream faults. Its fast body-diode reverse recovery suits active ORing topologies where parallel supplies share a load, and the SuperSO8 footprint allows dense multi-channel PCB designs. Designers typically combine this MOSFET with a hot-swap controller such as ADM1073 or LT4351 to limit inrush and detect fault events.
Được đề xuất
Industrial Synchronous Buck / Half-Bridge
In industrial 24-48 V input synchronous buck or half-bridge converters for motor drives and factory automation, the ISC019N08NM7ATMA1 provides the rugged switching element. Its 175 °C TJ max supports operation in sealed industrial enclosures with minimal airflow, and the OptiMOS 7 platform's low QG reduces gate-driver losses at high PWM frequencies (50-100 kHz typical for motor control). The PG-TDSON-8-43 footprint supports automated optical inspection and standard reflow profiles, easing high-volume manufacturing.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC019N08NM7ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC151N08NM6ATMA1 | IQE050N08NM5CGATMA1 | ISC015N06NM5ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8-43 (SuperSO8) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS (V) | 80 V | 80 V | 80 V | 60 V | 80 V |
| RDS(on) typ @ VGS=10V (mΩ) | 1.9 mΩ | 2.2 mΩ (+16%) | 5.0 mΩ (+163%) | 1.5 mΩ (-21%) | 2.4 mΩ (+26%) |
| Generation / Process | OptiMOS 7 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Latest-generation OptiMOS 7 platform with optimized FOM (vsISC151N08NM6ATMA1)
- 80V VDS rating for 48V telecom and 60V solar rails (vsISC015N06NM5ATMA1)
- SuperSO8 footprint compatibility across generations (vsIQE050N08NM5CGATMA1)
Ghi chú thiết kế
The PG-TDSON-8-43 SuperSO8 package achieves 188 W TC-rated power dissipation only when the drain tab is soldered to a substantial copper area on the PCB. Per the Infineon datasheet footnote, the standard test board uses a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm² (one layer, 70 µm copper) drain-connected area. Designers should provide at least 6 cm² of continuous copper pour on the drain tab plus thermal vias to inner layers for typical designs. For high-current (>50 A continuous) applications, double-sided cooling with thermal vias is strongly recommended. The exposed pad MUST be soldered to the PCB for proper thermal and electrical performance.
Keep the gate-drive loop area (gate driver output → gate resistor → MOSFET gate → source-return → gate driver ground) to a minimum to avoid parasitic turn-on and gate-oscillation. Place the gate resistor (typically 10-33 Ω for OptiMOS 7) as close as possible to the MOSFET gate pin. Use a Kelvin-source connection if available on the gate driver to isolate the gate-drive return from the high-current source path. The SuperSO8 package has very low internal source inductance, but the PCB layout can easily add 5-10 nH of parasitic inductance if the source return path is not kept short and wide.
Do not exceed the datasheet VGS maximum rating (typically ±20 V for OptiMOS 7). Gate-drive voltages above 20 V can permanently damage the gate oxide. For 12 V gate-drive systems this is not an issue, but designers using bootstrap-derived 15-18 V supplies should add a gate-to-source Zener clamp. Also ensure the VDS transient during turn-off stays below 80 V; snubbers or RC damping may be required on the switching node to control voltage overshoot in high-current applications. Always de-rate per Diagram 2 of the datasheet for case temperatures above 25 °C.
Estimated: at VDS=48 V, ID=50 A, and 200 kHz switching frequency, conduction loss is approximately P_cond = ID² × RDS(on) × duty = 50² × 0.0019 × 0.5 ≈ 2.4 W per switch, and switching loss is approximately P_sw = 0.5 × VDS × ID × (tr + tf) × fsw = 0.5 × 48 × 50 × (20ns + 20ns) × 200k ≈ 4.8 W. Total ≈ 7.2 W per switch, requiring thermal management with adequate copper area or airflow.
Thông tin tuân thủ
RoHS and halogen-free per Infineon datasheet. AEC-Q101 automotive screening is available on related OptiMOS 7 family parts - confirm variant suffix for automotive-grade requirements.
