ISC019N08NM7ATMA1 - 80V 1.9mΩ OptiMOS 7 N-MOSFET | Infineon
부품 번호: ISC019N08NM7ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.89 | $189.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.41 | $1,410.00 |
| 5,000 | $1.18 | $5,900.00 |
ISC019N08NM7ATMA1 개요
An N-channel power MOSFET is a voltage-controlled majority-carrier switch whose conduction is modulated by the gate-to-source voltage, enabling fast switching and high current density. MOSFETs are the dominant switching element in modern DC-DC converters, motor drivers, and ORing circuits, and Infineon's OptiMOS 7 family is engineered for the next generation of telecom, server, and automotive power systems. The ISC019N08NM7ATMA1 inherits Infineon's latest 80 V platform, offering improved Figure of Merit (RDS(on) × QG) versus prior OptiMOS generations.
Key differentiating specifications include RDS(on) of 1.9 mΩ at VGS=10 V, avalanche-rated single-pulse robustness, a thermally enhanced PG-TDSON-8-43 package with exposed pad, and operating junction temperatures up to 175 °C. The 80 V drain-to-source rating gives ample headroom above 48 V telecom and 60 V solar-string rails. The device is fully RoHS compliant and uses halogen-free molding compound per IEC 61249-2-21.
Technically, the ISC019N08NM7ATMA1 leverages Infineon's advanced trench cell geometry to minimize both conduction and switching losses, making it well suited for high-frequency synchronous rectification. The SuperSO8 footprint delivers very low parasitic source inductance, which directly improves switching-edge cleanliness and reduces voltage overshoot during hard commutation. Designers benefit from this when operating at 200 kHz+ in LLC and buck-derived topologies.
Typical applications include 48 V telecom bus converters, server and data-center intermediate-bus synchronous rectification, solar micro-inverters and DC optimizers, eMobility auxiliary power, and hot-swap / ORing circuits on 48 V backplanes. The 209 A pulsed rating also supports short-duration inrush and fault-clearing events. Compared with planar MOSFETs of the same RDS(on), OptiMOS 7 typically cuts gate charge by 30%, simplifying gate-drive and timing budgets.
Design consideration: the SuperSO8 package dissipates most of its heat through the drain tab; use sufficient copper pour (>=6 cm² on FR4) and thermal vias to the opposite layer to realize the full 188 W TC rating. Designers should also keep gate-loop area minimal and place the gate resistor close to the device to prevent parasitic turn-on.
This page synthesizes Infineon datasheet values, distributor pricing as of 2026-09-15, and drop-in SuperSO8 alternatives - practical engineering context not found on a single manufacturer datasheet.
드롭인 대체품: ISC019N08NM7ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: ISC019N08NM7ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Continuous Drain Current (ID) at TA=25C, Drain-to-Source Voltage (VDS), Gate Threshold Voltage VGS(th) typ.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
ISC151N08NM6ATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →IQE050N08NM5CGATMA1
✅ 드롭인✓ 재고 있음
$1.75 / 개
데이터시트 보기 →ISC015N06NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →BSC019N08NS5ATMA1
✅ 드롭인✓ 재고 있음
$1.78 / 개
데이터시트 보기 →ISC019N08NM7ATMA1
✅ 드롭인✓ 재고 있음
$1.18 / 개
데이터시트 보기 →ISC019N08NM7ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| 트랜지스터 유형 | N-Channel MOSFET |
| Technology | Trench MOSFET (OptiMOS 7) |
| Drain-to-Source Voltage (VDS) | 80 V |
| Drain Current (ID), TC=25°C | 209 A |
| Drain Current (ID), TA=25°C | 26 A |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΩ |
| Power Dissipation (PD), TC=25°C | 188 W |
| Power Dissipation (PD), TA=25°C | 3 W (6 cm² FR4) |
| 동작 접합 온도 | -55 °C to +175 °C |
| 패키지 | PG-TDSON-8-43 (SuperSO8) |
| 실장 유형 | Surface Mount |
| 할로겐 프리 | Yes |
| RoHS 상태 | Compliant |
ISC019N08NM7ATMA1 핀 구성
| 핀 1 | Source — Source connection (internally connected to pin 2, pin 3 and the exposed pad tab in SuperSO8) |
| 핀 2 | Source — Source connection (internally tied to pin 1, pin 3) |
| 핀 3 | Source — Source connection (internally tied to pin 1, pin 2) |
| 핀 4 | Gate — Gate drive input |
| 핀 5 | Drain — Drain connection (internally tied to pin 6, pin 7, pin 8 and exposed pad) |
| 핀 6 | Drain — Drain connection (internally tied to pin 5, pin 7, pin 8) |
| 핀 7 | Drain — Drain connection (internally tied to pin 5, pin 6, pin 8) |
| 핀 8 | Drain — Drain connection (internally tied to pin 5, pin 6, pin 7) |
ISC019N08NM7ATMA1 안전 동작 영역 (DC)
일반적인 애플리케이션
ISC019N08NM7ATMA1 적합 용도: 6 애플리케이션s: 48V Telecom Bus Converter, Server / Data-Center Intermediate Bus, Solar Micro-Inverter / DC Optimizer, eMobility Auxiliary Power, Hot-Swap / ORing Controller, Industrial Synchronous Buck / Half-Bridge.
48V Telecom Bus Converter
The ISC019N08NM7ATMA1 is ideally suited as the synchronous-rectifier MOSFET in 48 V telecom bus converters feeding downstream 12 V or 5 V rails. Its 80 V VDS rating provides generous headroom above the 48 V nominal bus (including transients to 60 V), while the 1.9 mΩ typical RDS(on) at VGS=10 V minimizes conduction loss in the high-current secondary-side loop. The SuperSO8 package keeps the source inductance low, reducing switching-edge overshoot at 200 kHz+ switching frequencies typical of LLC and resonant topologies. Compared with planar MOSFETs of the same RDS(on), OptiMOS 7 reduces gate charge by ~30%, simplifying gate-drive and timing budgets in high-density converter designs.
추천
Server / Data-Center Intermediate Bus
In 48 V-to-PoL intermediate bus converters (IBC) for hyperscale servers, the ISC019N08NM7ATMA1 replaces older 80 V planar MOSFETs and immediately drops conduction losses by 30-50% due to its 1.9 mΩ RDS(on) in SuperSO8. The 209 A TC-rated silicon capability handles peak loads during GPU/CPU boost events, and the 175 °C TJ max supports dense PCB layouts with limited airflow. The OptiMOS 7 platform also enables higher switching frequencies (300-500 kHz) for smaller magnetics. For dual-stage IBC architectures this MOSFET pairs naturally with 25 V-rated parts on the secondary side for best overall efficiency.
추천
Solar Micro-Inverter / DC Optimizer
The ISC019N08NM7ATMA1 is a strong choice for the high-side and low-side switches in solar micro-inverters and module-level DC power optimizers operating from 30-60 V PV strings. Its 80 V VDS comfortably exceeds the maximum open-circuit voltage of a 60 V PV string at -10 °C, while the 1.9 mΩ RDS(on) ensures high conversion efficiency under partial-load conditions typical of residential solar. The SuperSO8 footprint allows compact power-dense layouts that fit within the module-level enclosure, and the halogen-free / RoHS-compliant molding compound meets IEC 61249-2-21 requirements for solar deployment.
추천
eMobility Auxiliary Power
In 48 V eMobility auxiliary converters (electric power steering, brake-by-wire, HVAC blowers), the ISC019N08NM7ATMA1 delivers the high-current switching capability required by 3-5 kW stages. Its 80 V VDS gives safety margin over 48 V bus transients to 60 V, and the 1.9 mΩ RDS(on) keeps dissipation under 20 W at 100 A continuous, simplifying thermal management on a vibration-loaded PCB. The SuperSO8 package is mechanically robust and supports conformal coating and under-body automotive environments when paired with the AEC-Q101 screening option.
추천
Hot-Swap / ORing Controller
For 48 V backplane ORing and hot-swap circuits in telecom and server PSUs, the ISC019N08NM7ATMA1 provides the low RDS(on) needed to minimize steady-state voltage drop and the 209 A TC rating to clear downstream faults. Its fast body-diode reverse recovery suits active ORing topologies where parallel supplies share a load, and the SuperSO8 footprint allows dense multi-channel PCB designs. Designers typically combine this MOSFET with a hot-swap controller such as ADM1073 or LT4351 to limit inrush and detect fault events.
추천
Industrial Synchronous Buck / Half-Bridge
In industrial 24-48 V input synchronous buck or half-bridge converters for motor drives and factory automation, the ISC019N08NM7ATMA1 provides the rugged switching element. Its 175 °C TJ max supports operation in sealed industrial enclosures with minimal airflow, and the OptiMOS 7 platform's low QG reduces gate-driver losses at high PWM frequencies (50-100 kHz typical for motor control). The PG-TDSON-8-43 footprint supports automated optical inspection and standard reflow profiles, easing high-volume manufacturing.
추천
추천 제품 요약
엔지니어링 참조 데이터: ISC019N08NM7ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | ISC151N08NM6ATMA1 | IQE050N08NM5CGATMA1 | ISC015N06NM5ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8-43 (SuperSO8) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS (V) | 80 V | 80 V | 80 V | 60 V | 80 V |
| RDS(on) typ @ VGS=10V (mΩ) | 1.9 mΩ | 2.2 mΩ (+16%) | 5.0 mΩ (+163%) | 1.5 mΩ (-21%) | 2.4 mΩ (+26%) |
| Generation / Process | OptiMOS 7 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Latest-generation OptiMOS 7 platform with optimized FOM (vs ISC151N08NM6ATMA1)
- 80V VDS rating for 48V telecom and 60V solar rails (vs ISC015N06NM5ATMA1)
- SuperSO8 footprint compatibility across generations (vs IQE050N08NM5CGATMA1)
설계 노트
The PG-TDSON-8-43 SuperSO8 package achieves 188 W TC-rated power dissipation only when the drain tab is soldered to a substantial copper area on the PCB. Per the Infineon datasheet footnote, the standard test board uses a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm² (one layer, 70 µm copper) drain-connected area. Designers should provide at least 6 cm² of continuous copper pour on the drain tab plus thermal vias to inner layers for typical designs. For high-current (>50 A continuous) applications, double-sided cooling with thermal vias is strongly recommended. The exposed pad MUST be soldered to the PCB for proper thermal and electrical performance.
Keep the gate-drive loop area (gate driver output → gate resistor → MOSFET gate → source-return → gate driver ground) to a minimum to avoid parasitic turn-on and gate-oscillation. Place the gate resistor (typically 10-33 Ω for OptiMOS 7) as close as possible to the MOSFET gate pin. Use a Kelvin-source connection if available on the gate driver to isolate the gate-drive return from the high-current source path. The SuperSO8 package has very low internal source inductance, but the PCB layout can easily add 5-10 nH of parasitic inductance if the source return path is not kept short and wide.
Do not exceed the datasheet VGS maximum rating (typically ±20 V for OptiMOS 7). Gate-drive voltages above 20 V can permanently damage the gate oxide. For 12 V gate-drive systems this is not an issue, but designers using bootstrap-derived 15-18 V supplies should add a gate-to-source Zener clamp. Also ensure the VDS transient during turn-off stays below 80 V; snubbers or RC damping may be required on the switching node to control voltage overshoot in high-current applications. Always de-rate per Diagram 2 of the datasheet for case temperatures above 25 °C.
Estimated: at VDS=48 V, ID=50 A, and 200 kHz switching frequency, conduction loss is approximately P_cond = ID² × RDS(on) × duty = 50² × 0.0019 × 0.5 ≈ 2.4 W per switch, and switching loss is approximately P_sw = 0.5 × VDS × ID × (tr + tf) × fsw = 0.5 × 48 × 50 × (20ns + 20ns) × 200k ≈ 4.8 W. Total ≈ 7.2 W per switch, requiring thermal management with adequate copper area or airflow.
규정 준수 정보
RoHS and halogen-free per Infineon datasheet. AEC-Q101 automotive screening is available on related OptiMOS 7 family parts - confirm variant suffix for automotive-grade requirements.
