1EBN1001AEXUMA1 vs 1ED3142MC12HXUMA1 比較

詳細並排比較 1EBN1001AEXUMA1 由 Infineon 與 1ED3142MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1EBN1001AEXUMA1 1ED3142MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) Inverting, Non-Inverting
輸出數量 2 (separate source and sink paths) 2 (separate source/sink)
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
封裝 PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-DSO-8 (PG-LDSO-8-1)
安裝類型 Surface Mount Surface Mount
工作溫度 -40 °C to +125 °C (automotive grade) —
Automotive Qualification AEC-Q100 qualified —
MSL 等級 [DATA_NEEDED: MSL level] —
RoHS 狀態 Compliant —
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Propagation Delay (typ.) — 40 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

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