1EDI20I12MFXUMA1 vs 1ED3124MC12HXUMA1 比較

詳細並排比較 1EDI20I12MFXUMA1 由 Infineon 與 1ED3124MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ 啟用中
Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 啟用中

規格比較

參數 1EDI20I12MFXUMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Isolated single-channel high-side gate driver —
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 —
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns —
Input Logic Inverting / Non-inverting —
輸出配置 Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
封裝 PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-8 (DSO-8)
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] -40 C to +125 C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
RoHS 狀態 Compliant Compliant
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
輸出數量 — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升時間 — 15 ns
下降時間 — 30 ns
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

資料表與資源

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