2N7002LT1G vs FDV301N 比較
詳細並排比較 2N7002LT1G 由 onsemi 與 FDV301N 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2N7002LT1G | FDV301N |
|---|---|---|
| 品牌 | onsemi | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| 封裝 | SOT-23-3 (TO-236) | SOT-23-3 |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| 類別 | Small Signal MOSFET | — |
| Technology | MOSFET | High cell density DMOS |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Packaging | [DATA_NEEDED: packaging type] | — |
| 電晶體類型 | — | N-Channel Enhancement Mode MOSFET (Digital FET) |
| Drain-Source Voltage (Vdss) | — | 25 V |
| Continuous Drain Current (Id) | — | 220 mA (Ta) |
| Peak Drain Current | — | 0.5 A |
| RDS(on) at VGS = 2.7 V | — | 5 ohm (typical) |
| RDS(on) typical | — | 4 ohm |
| Power Dissipation (Pd) | — | 350 mW (Ta) |
| Gate Drive Type | — | Logic level (no bias resistors required) |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| Gate-Source Voltage (Vgs) Max | — | [DATA_NEEDED: maximum gate-source voltage] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Thermal Resistance (RthJA) | — | [DATA_NEEDED: thermal resistance junction to ambient] |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS compliance status] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |