BSS308PEH6327XTSA1 vs BSL207SPH6327XTSA1 比較

詳細並排比較 BSS308PEH6327XTSA1 由 Infineon 與 BSL207SPH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS308PEH6327XTSA1 BSL207SPH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
電晶體類型 P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) 2 W (Ta)
工作溫度範圍 -55 °C to +150 °C —
封裝 / 外殼 PG-SOT23 (SOT-23-3) —
安裝類型 Surface Mount Surface Mount
腳位數 3 —
Qualification AEC-Q101 Automotive —
RoHS 狀態 Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical]
FET Type — P-Channel
Technology — MOSFET (Metal Oxide)
Drain to Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at 25C — 6 A (Ta)
RDS(on) Max @ VGS = -4.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-4.5V]
RDS(on) Max @ VGS = -2.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-2.5V]
Drive Voltage (Max RDS(on), Min RDS(on)) — 2.5 V, 4.5 V
封裝 — TSOP-6 (PG-TSOP6-6)
工作溫度 — -55C to +150C
Series — OptiMOS™
Automotive Qualification — AEC-Q101
腳位數 — 6

資料表與資源

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