BSZ0901NSIATMA1 vs BSZ0904NSIATMA1 比較
詳細並排比較 BSZ0901NSIATMA1 由 Infineon 與 BSZ0904NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ0901NSIATMA1 | BSZ0904NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS (N-channel power MOSFET) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 25 A | 18 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 40 A |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| 封裝 | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th)] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| 工作溫度範圍 | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| RoHS 狀態 | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | — | 30 V |
| On-State Resistance RDS(on) max at VGS=4.5V | — | 4 mOhm |
| On-State Resistance RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Power Dissipation at Ta | — | 2.1 W |
| Power Dissipation at Tc | — | 37 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Integrated Schottky-like Diode | — | Yes (monolithic) |
| Avalanche Rated | — | 100% avalanche tested |
| Qualification | — | JEDEC qualified for target applications |
| Lead Plating | — | Pb-free |
| 無鹵素 | — | Yes |