CSD17303Q5 vs CSD18503Q5A 比較

詳細並排比較 CSD17303Q5 由 Texas Instruments 與 CSD18503Q5A 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
CSD17303Q5 CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI

CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI

CSD17303Q5 ✓ 啟用中
Texas Instruments
CSD18503Q5A CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A ✓ 啟用中

規格比較

參數 CSD17303Q5 CSD18503Q5A
品牌 Texas Instruments Texas Instruments
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel N-Channel
Vds Drain-Source Voltage 30 V —
Id Continuous Drain Current (Ta) 32 A —
Id Continuous Drain Current (Tc) 100 A —
Rds(on) On-Resistance 2.6 mOhm —
Power Dissipation (Ta) 3.2 W 3.1 W
Gate Drive Optimization 5 V —
Gate Charge [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg]
Avalanche Rated Yes —
工作溫度 -55C to +150C —
封裝 VSON-CLIP (DQH) 8-pin, 5x6 mm 8-VSONP (DQJ), 5 mm x 6 mm
安裝類型 Surface Mount Surface Mount
Terminal Plating Pb-free —
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
無鹵素 Yes —
Technology NexFET NexFET
Drain-Source Voltage (VDS) — 40 V
On-Resistance (RDS(on)) — 4.3 mOhm (3.4 mOhm typical)
Continuous Drain Current (Ta) — 19 A
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 120 W
工作接面溫度 — -55C to +150C
Configuration — Single
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
腳位數 — 8

資料表與資源

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