CSD18503Q5A vs CSD17303Q5 比較

詳細並排比較 CSD18503Q5A 由 Texas Instruments 與 CSD17303Q5 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
CSD18503Q5A CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A ✓ 啟用中
Texas Instruments
CSD17303Q5 CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI

CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI

CSD17303Q5 ✓ 啟用中

規格比較

參數 CSD18503Q5A CSD17303Q5
品牌 Texas Instruments Texas Instruments
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V —
On-Resistance (RDS(on)) 4.3 mOhm (3.4 mOhm typical) —
Continuous Drain Current (Ta) 19 A —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Ta) 3.1 W 3.2 W
Power Dissipation (Tc) 120 W —
Technology NexFET NexFET
封裝 8-VSONP (DQJ), 5 mm x 6 mm VSON-CLIP (DQH) 8-pin, 5x6 mm
安裝類型 Surface Mount Surface Mount
工作接面溫度 -55C to +150C —
Configuration Single —
Gate Charge [DATA_NEEDED: Qg] [DATA_NEEDED: Qg value]
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
腳位數 8 —
Vds Drain-Source Voltage — 30 V
Id Continuous Drain Current (Ta) — 32 A
Id Continuous Drain Current (Tc) — 100 A
Rds(on) On-Resistance — 2.6 mOhm
Gate Drive Optimization — 5 V
Avalanche Rated — Yes
工作溫度 — -55C to +150C
Terminal Plating — Pb-free
無鹵素 — Yes

資料表與資源

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