EP3SE50F484I4G vs EP3SE50F484I3N 比較
詳細並排比較 EP3SE50F484I4G 由 Intel 與 EP3SE50F484I3N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE50F484I4G | EP3SE50F484I3N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | NRND | NRND |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 47,500 LE | 47,500 |
| Adaptive Logic Modules (ALMs) | 19,000 ALM | — |
| Embedded Memory | 5.49 Mbit | — |
| User I/Os | 296 I/O | — |
| 工作電源電壓 | 1.1 V (core) | — |
| 工作溫度 | -40C to +100C (industrial) | -40C to +100C (industrial) |
| Speed Grade | 4 | I3 (industrial, bin 3) |
| 安裝方式 | SMD/SMT | — |
| 封裝 | 484-Ball FCBGA (FineLine BGA) | 484-pin FC-FBGA (flip-chip BGA) |
| Process Technology | 40 nm low-power CMOS | 65 nm |
| RoHS 狀態 | Compliant (lead-free 'G' suffix) | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| Transceiver Count | Up to 12 (Stratix III E family) | [DATA_NEEDED: number of embedded transceivers] |
| External Memory Support | DDR3, DDR2, QDR II/II+ | — |
| Number of LABs | — | 1,900 |
| Total Memory Bits | — | 5,760,000 |
| Maximum User I/O | — | 296 |
| Number of I/O Banks | — | [DATA_NEEDED: number of I/O banks] |
| Core Voltage VCC | — | 0.9 V |
| Auxiliary Voltage VCCAUX | — | 1.1 V |
| Maximum Internal Frequency | — | 500 MHz |
| 安裝類型 | — | Surface Mount (BGA) |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Configuration Method | — | Active serial (AS), passive serial (PS), JTAG, fast passive parallel (FPP) |
| DSP Blocks | — | [DATA_NEEDED: number of DSP blocks] |
| Embedded Multipliers (18x18) | — | [DATA_NEEDED: number of 18x18 multipliers] |