H5AN4G8NBJR-VKI vs H5AN4G8NBJR-RDC 比較
詳細並排比較 H5AN4G8NBJR-VKI 由 SK hynix 與 H5AN4G8NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G8NBJR-VKI | H5AN4G8NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| 組織 | 512M x 8 | 512M x 8 |
| 資料速率 | 2666 Mbps | [DATA_NEEDED: speed grade Mbps] |
| 供應電壓 | 1.2 V | [DATA_NEEDED: VDD supply voltage] |
| I/O Voltage | 1.2 V (SSTL12) | — |
| 封裝 | FBGA-78 | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Speed Grade | V (2666) | — |
| Temperature Grade | Industrial (I suffix) | [DATA_NEEDED: operating temperature range] |
| Architecture | CMOS, 8n prefetch, bank groups | — |
| Termination | On-Die Termination (ODT) | On-Die Termination (ODT) |
| DBI Support | Yes (Data Bus Inversion / DM) | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Auto-refresh and self-refresh |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | Lead-Free & Halogen-Free (RoHS Compliant) |
| 介面 | — | DDR4 (Double Data Rate IV) |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |