H5AN8G4NAFR-UHC vs H5AN8G6NAFR-UHC 比較

詳細並排比較 H5AN8G4NAFR-UHC 由 SK hynix 與 H5AN8G6NAFR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G4NAFR-UHC H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

H5AN8G4NAFR-UHC ✓ 啟用中
SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC ✓ 啟用中

規格比較

參數 H5AN8G4NAFR-UHC H5AN8G6NAFR-UHC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Manufacturer SK hynix (Hynix Semiconductor) —
記憶體類型 DDR4 SDRAM (CMOS) DDR4 SDRAM (CMOS)
Density 8 Gbit —
組織 2G x4 512M x 16
Supply Voltage (VDD) 1.2 V —
Speed Grade UHC —
介面 Synchronous, dual rising/falling clock edges —
Clock Input Differential CK_t / CK_c —
封裝 78-ball FBGA 96-ball FBGA (TFBGA)
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] 0C to +85C
RoHS 狀態 Compliant (Lead-Free & Halogen-Free) [DATA_NEEDED: RoHS status]
Family Variants H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Datasheet Revision Rev. 1.2 (Jul. 2017), 45 pages —
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Packaging [DATA_NEEDED: reel / tray quantity] —
Memory Density — 8 Gbit
供應電壓 — 1.2 V
資料速率 — 2400 MT/s
Clock Architecture — Differential clock (CK_t / CK_c), fully synchronous
Refresh — Auto self-refresh
Precharge — Auto precharge function
Reset — Asynchronous reset function
Data Mask — DM function supported
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration function
Error Checking — CRC function
Write Leveling — Write leveling function supported

資料表與資源

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