H5TC4G63CFR-PBA vs H5TC4G63AFR-G7A 比較

詳細並排比較 H5TC4G63CFR-PBA 由 SK hynix 與 H5TC4G63AFR-G7A 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5TC4G63CFR-PBA H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA ✓ 啟用中
SK hynix
H5TC4G63AFR-G7A H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A ✓ 啟用中

規格比較

參數 H5TC4G63CFR-PBA H5TC4G63AFR-G7A
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
單價 (USD) $6.23 —
記憶體類型 DDR3L SDRAM DDR3L SDRAM
Density 4Gb 4Gb
組織 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V —
封裝 96-ball FBGA (PBGA96) 96-ball FBGA
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-chip DLL Yes —
Data Mask (DM) Yes —
Auto Precharge Yes —
Auto Self-Refresh Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
Write Leveling Yes —
Asynchronous Reset Yes —
RoHS Compliant Compliant
無鹵素 Yes Yes
Lead-Free Yes Yes
供應電壓 — 1.35V
資料速率 — 1600 Mbps (PC3-12800)
工作溫度 — 0°C to 95°C (case)
CAS 延遲 — Programmable (e.g., 11)
Burst Length — 8 and 4
Refresh Period — 7.8us at 85°C
On-Die Termination — Supported
Process Technology — CMOS

資料表與資源

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