IAUCN08S7L018ATMA1 vs IAUC120N06S5L015ATMA1 比較
詳細並排比較 IAUCN08S7L018ATMA1 由 Infineon 與 IAUC120N06S5L015ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ 啟用中規格比較
| 參數 | IAUCN08S7L018ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Technology | N-Channel Trench MOSFET | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55C to +175C (Tj) |
| 封裝 | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-43 (Surface Mount) |
| 安裝類型 | Surface Mount | Surface Mount (exposed pad) |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS 狀態 | Compliant | Compliant |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |