IPB60R040CFD7ATMA1 vs IPD50R399CPATMA1 比較

詳細並排比較 IPB60R040CFD7ATMA1 由 Infineon 與 IPD50R399CPATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中
Infineon
IPD50R399CPATMA1 IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon

IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon

IPD50R399CPATMA1 ✓ 啟用中

規格比較

參數 IPB60R040CFD7ATMA1 IPD50R399CPATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 CoolMOS CP
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CP (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功率耗散 (TC=25°C) 227 W —
工作溫度範圍 -55°C to +150°C —
封裝 PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK)
安裝類型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等級 1 —
RoHS 狀態 Compliant —
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 500 V
Continuous Drain Current (I_D, Tc) — 9 A
Power Dissipation (P_D, Tc) — 83 W
On-Resistance (R_DS(on), typ) — 0.399 ohm
腳位數 — 3 (Gate, Drain, Source)
Lead Free / RoHS — ROHS3 Compliant
Configuration — Single
Operating Mode — Enhancement-mode
Datasheet Series — IPD50R399CP

資料表與資源

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