IR2011STRPBF vs IRS2104STRPBF 比較

詳細並排比較 IR2011STRPBF 由 Infineon 與 IRS2104STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2104STRPBF IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF ✓ 啟用中

規格比較

參數 IR2011STRPBF IRS2104STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration High-Side and Low-Side (Independent) —
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL Standard CMOS / LSTTL
Propagation Delay (typ.) 80 ns 150 ns
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune —
工作溫度 -40 C to +125 C —
封裝 8-SOIC (3.90 mm body width) 8-Lead SOIC (SOIC-8)
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant —
Product Type — Half-Bridge Gate Driver IC
拓撲 — Half-Bridge (High-Side + Low-Side)
Number of Channels — 2 (HS + LS, dependent)
High-Side Offset Voltage (VS) — -5 V to +600 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.6 A
Rise Time (typ.) — 35 ns
Fall Time (typ.) — 70 ns
Quiescent Current (typ.) — 150 uA
Undervoltage Protection — Yes (VCC and VBS UVLO)
Shutdown Pin — Yes (SD, active-low per typical usage)
工作接面溫度 — -40C to +150C
MSL 等級 — 2 (1 year floor life per datasheet)
Qualification Level — Industrial
RoHS 狀態 — Compliant (PbF suffix)

資料表與資源

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