IRF3710STRLPBF vs IRF640NSTRLPBF 比較
詳細並排比較 IRF3710STRLPBF 由 Infineon 與 IRF640NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF3710STRLPBF | IRF640NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET / IR MOSFET (planar) | HEXFET (5th generation, trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 57 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max | 23 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Total Gate Charge (Qg) | 86.7 nC | 44.7 nC |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc=25 C) | 200 W | — |
| 工作溫度範圍 | -55 C to +175 C | — |
| 封裝 | D2PAK (TO-263), surface mount | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| 安裝類型 | Surface Mount | Surface Mount (Tape and Reel) |
| RoHS 狀態 | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | — |
| Tape & Reel Orientation | TRL (left) | — |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | — | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.15 ohm |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| 工作接面溫度範圍 | — | -55C to +175C |
| Lead-Free (PbF) | — | Yes |