IRFB3207ZPBF vs IRFB4410PBF 比較
詳細並排比較 IRFB3207ZPBF 由 Infineon 與 IRFB4410PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFB3207ZPBF | IRFB4410PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | HEXFET |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | MOSFET (Metal Oxide) - HEXFET |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | TO-220AB (3-lead through-hole) | TO-220AB (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| MSL 等級 | N/A (through-hole) | 1 (unlimited) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C | — | 88 A (Tc) |
| Continuous Drain Current (Id) @ 100C | — | [DATA_NEEDED: Id @ 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm pulse] |
| Gate-to-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| RDS(on) max @ VGS=10V | — | 10 mOhm |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) | — | 200 W (Tc) |
| 工作溫度範圍 | — | -55C to +175C (Tj) |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| RoHS 狀態 | — | Compliant (Pb-free PBF suffix) |