IRFB4110PBF vs AUIRFB8409 比較
詳細並排比較 IRFB4110PBF 由 Infineon 與 AUIRFB8409 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFB4110PBF | AUIRFB8409 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $1.55 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| 工作接面溫度 | -55 °C to +175 °C | -55 °C to +175 °C |
| 封裝 | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| Technology | HEXFET (planar DMOS) | HEXFET (planar-trench MOSFET) |
| 安裝類型 | Through Hole | Through Hole |
| RoHS 狀態 | Compliant (Pb-free suffix) | [DATA_NEEDED: explicit RoHS statement in datasheet] |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 195 A |
| 脈衝汲極電流 | — | [DATA_NEEDED: pulsed ID value] |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) | — | 1.2 mΩ (Infineon page) / 0.97 mΩ (Mouser title) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th) typical] |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 375 W |
| Maximum Junction Temperature | — | 175 °C |
| Qualification | — | Automotive Grade (AEC-Q101 family) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |