IRFR9024NTRPBF vs IRF7309TRPBF 比較

詳細並排比較 IRFR9024NTRPBF 由 Infineon 與 IRF7309TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF ✓ 啟用中

規格比較

參數 IRFR9024NTRPBF IRF7309TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) $0.17 —
Polarity P-Channel N+P
VDS (Drain-Source Voltage) -55 V —
Continuous Drain Current (Tc=25C) -11 A —
脈衝汲極電流 [DATA_NEEDED: pulsed drain current] —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] —
RDS(on) Max at VGS=-10V 175 mOhm —
Total Gate Charge (Qg) 12.7 nC —
Maximum Power Dissipation (Tc=25C) 38 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK) 8-SO (SOIC-8)
安裝類型 Surface Mount Surface Mount
腳位數 3 —
Technology HEXFET (Gen 5) IR HEXFET Generation V
RoHS 狀態 Compliant Compliant
Configuration — Dual N-Channel + P-Channel (Complementary)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (N-channel, TA=25C) — 4 A
Continuous Drain Current (P-channel, TA=25C) — 3 A
On-Resistance (N-channel, max) — 50 mOhm
On-Resistance (P-channel, max) — [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) — 1.4 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
工作溫度範圍 — -55C to +150C (TJ)
MSL 等級 — MSL-1 (unlimited floor life per JEDEC J-STD-020)
Lead-Free Status — Yes (TRPBF suffix = Pb-free)
Packaging — Tape & Reel

資料表與資源

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