IRS21271STRPBF vs IR2117STRPBF 比較

詳細並排比較 IRS21271STRPBF 由 Infineon 與 IR2117STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS21271STRPBF IRS21271STRPBF - 600V High-Side Gate Driver IC | Infineon

IRS21271STRPBF - 600V High-Side Gate Driver IC | Infineon

IRS21271STRPBF ✓ 啟用中

規格比較

參數 IRS21271STRPBF IR2117STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 High-Side Gate Driver with Current Sense and Fault Output Gate Driver, Non-Inverting
Number of Channels 1 —
Input Type Non-Inverting —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Voltage Range 9 V to 20 V (automotive VBS range) —
VCC Supply Voltage 12 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility CMOS / LSTTL, down to 3.3 V —
Current Sense Comparator Integrated (CS pin with reference) —
Fault Output Yes (open-drain FAULT pin) —
Floating Channel Transient Immunity Negative VS transient tolerant, dV/dt immune —
工作溫度範圍 -40C to +125C -40 C to +125 C
封裝 8-SOIC (3.90 mm body width) —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL 3 MSL3 (per JEDEC J-STD-020)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Configuration — High-Side Single Channel
Input Logic Compatibility — CMOS / TTL
輸出數量 — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
上升時間 — 80 ns (typ)
下降時間 — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
Negative Transient Voltage Tolerance — Yes, dV/dt immune
封裝 / 外殼 — 8-SOIC (0.154 inch / 3.90 mm width)
RoHS 狀態 — Compliant
Lead-Free — Yes

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