JMTG100N06A vs DMN3190LDW-7 比較
詳細並排比較 JMTG100N06A 由 Jiejie Micro 與 DMN3190LDW-7 由 Diodes Incorporated. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ 啟用中規格比較
| 參數 | JMTG100N06A | DMN3190LDW-7 |
|---|---|---|
| 品牌 | Jiejie Micro | Diodes Incorporated |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Jiangsu JieJie Microelectronics Co., Ltd | — |
| 電晶體類型 | N-Channel Power Trench MOSFET | — |
| Drain-Source Voltage V(DSS) | 60 V | — |
| Continuous Drain Current I(D) | 55 A (at V(GS)=10 V, T(C)=25 °C) | — |
| R(DS(on)) Typ @ V(GS)=10 V | 7.7 mΩ | — |
| R(DS(on)) Typ @ V(GS)=4.5 V | 8.9 mΩ | — |
| Gate Threshold Voltage V(GS(th)) Typ | 1.5 V | — |
| 封裝 | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) | SOT-363 (SC-70-6) 6-pin |
| 安裝類型 | Surface Mount | Surface Mount |
| Plating | Pb-free | — |
| 無鹵素 | Yes | — |
| RoHS | Compliant | — |
| UIS (Avalanche) Tested | 100 % | — |
| V(DS) Tested | 100 % | — |
| EAS Test Condition | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A | — |
| Primary Applications | Load Switch, PWM, DC-DC, Motor Drive | — |
| FET Type | — | Dual N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate-Source Voltage (VGS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1 A |
| Power Dissipation (PD) | — | 320 mW |
| 工作溫度 | — | -55C to +150C |
| Configuration | — | Dual, independent drains |
| Technology | — | Silicon N-Channel MOSFET |
| Channel Mode | — | Enhancement |
| MSL 等級 | — | 1 (unlimited) |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Factory Pack Quantity | — | 3000 |