K4A8G165WB-BCPB vs K4A8G165WC-BCPB 比較
詳細並排比較 K4A8G165WB-BCPB 由 Samsung Electronics 與 K4A8G165WC-BCPB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G165WB-BCPB | K4A8G165WC-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gb | — |
| 組織 | 512M x 16 | — |
| 資料速率 | 2133 Mbps | DDR4-2133 (2133 Mbps/pin) |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 工作溫度 | 0C to +85C | 0C to +95C |
| 封裝 | 96FBGA (TFBGA) | 96-ball FBGA (TFBGA) |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | C-die (1Y nm class) |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (synchronous, double data rate) | DDR4 (16-bit data bus) |
| Bank Groups | DDR4 bank-group architecture | — |
| RoHS 狀態 | Compliant (per Lisleapex listing) | Compliant |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| 供應電壓 | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| 功能特色 | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| MSL 等級 | — | [DATA_NEEDED: MSL Level] |
| Standard | — | JEDEC DDR4 SDRAM |