K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
MPN： K4A8G165WC-BCPB ✓ 啟用中K4A8G165WC-BCPB 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, sitting within the broader hierarchy of volatile memory -> DRAM -> synchronous DRAM -> DDR SDRAM -> power-management-intensive main-memory ICs. Compared with DDR3, DDR4 lowers the operating voltage from 1.5 V to 1.2 V, doubles bank groups for higher bandwidth, and adds features such as bank group architecture, DLL-on/off modes, and per-DRAM addressability.
Key features of the K4A8G165WC-BCPB include the wide x16 data interface, which simplifies controller routing for embedded designs; auto precharge and asynchronous reset functions; CRC and parity support on critical signals; ZQ calibration for output driver impedance; dynamic on-chip termination (ODT); and a data mask (DM) function for partial writes. The 1.2 V rail reduces system power roughly 25% versus equivalent DDR3 solutions.
Technically, the device uses internal bank groups that allow interleaved accesses for higher effective bandwidth, a programmable DLL for output timing alignment, and programmable CAS latency appropriate to the 2133 Mbps/pin class. The 96-ball FBGA lead-free package measures approximately 7.5 mm x 10 mm x 0.8 mm and suits high-density soldered-down memory subsystems.
Typical applications include embedded industrial controllers, networking equipment line cards, set-top boxes, and FPGA-based processing systems that require soldered 8 Gb DDR4 with a 16-bit data bus, such as Xilinx Zynq UltraScale+ or AMD/Intel embedded platforms.
Design consideration: DDR4 fly-by routing requires proper on-die termination tuning, length-matched address/command groups, and VTT termination supply design; verify the controller supports the x16 organization, since x8 modules use a different 78-ball footprint.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Prices as of 2026-09-04.
直接替換替代品，適用於 K4A8G165WC-BCPB — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A8G165WC-BCPB （相同外形與佔位） — 差異在於 Package, Data Rate, Operating Temperature, Interface, Memory Type.
K4A8G165WB-BCPB
✅ 直接替換聯絡詢價
查看資料表 →K4A8G165WC-BCTD
✅ 直接替換✓ 有庫存
$41.2 / 單位
查看資料表 →K4A8G165WC-BCRC
✅ 直接替換聯絡詢價
查看資料表 →K4A8G165WC-BCWE
✅ 直接替換✗ 缺貨
$38 / 單位
查看資料表 →K4A8G165WB-BCTD
✅ 直接替換✗ 缺貨
$37 / 單位
查看資料表 →K4A8G165WB-BCRC
✅ 直接替換✗ 缺貨
$12.57 / 單位
查看資料表 →K4A8G165WB-BCWE
✅ 直接替換✓ 有庫存
$6.55 / 單位
查看資料表 →K4A8G165WC-BCPB 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM (volatile DRAM) |
| 記憶體容量 | 8 Gb |
| Memory Organization | 512M x 16 |
| 資料速率 | DDR4-2133 (2133 Mbps/pin) |
| 供應電壓 | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V |
| 介面 | DDR4 (16-bit data bus) |
| 封裝 | 96-ball FBGA (TFBGA) |
| Die Generation | C-die (1Y nm class) |
| 安裝類型 | Surface Mount |
| 工作溫度 | 0C to +95C |
| 功能特色 | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | On-die termination (ODT), dynamic |
| RoHS 狀態 | Compliant |
| Standard | JEDEC DDR4 SDRAM |
K4A8G165WC-BCPB 96-ball fbga (tfbga) 腳位配置指南
K4A8G165WC-BCPB（96-ball fbga (tfbga) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K4A8G165WC-BCPB.
請參閱 資料表 以查看完整腳位配置。
典型應用
K4A8G165WC-BCPB 適用於 6 應用s: Embedded Industrial Controllers, Networking Equipment Line Cards, FPGA-Based Processing Systems, Set-Top Boxes and Smart Home Gateways, Test and Measurement Instrumentation, Automotive-Adjacent Embedded Gateways (Industrial Grade).
Embedded Industrial Controllers
Industrial PLCs and edge controllers need soldered, high-density main memory with long-term availability. The K4A8G165WC-BCPB provides 8 Gb in a single 512M x16 chip at 1.2 V, cutting memory power versus DDR3 by roughly 25%, and its 96-ball FBGA package survives vibration better than SODIMM modules. Placed on a fly-by or matched-length DDR4 bus with dynamic ODT and ZQ calibration enabled, it sustains DDR4-2133 throughput for real-time control data logging. The 0C to +95C operating range covers typical industrial enclosure conditions, and the x16 bus halves component count versus x8, reducing BOM risk.
推薦
Networking Equipment Line Cards
Switch and router line cards use soldered DDR4 for packet buffers, routing tables, and control-plane memory. The K4A8G165WC-BCPB's 2133 Mbps/pin data rate delivers the bandwidth needed for queue management, while CRC support improves data integrity on high-availability links and the asynchronous reset function simplifies system-level fault recovery. Its 96-ball FBGA footprint allows multiple chips to be stacked on a matched-length bus for larger buffers. Dynamic ODT termination reduces signal-integrity tuning effort on multi-drop topologies common in networking backplane-adjacent designs.
推薦
FPGA-Based Processing Systems
FPGA image-processing and data-acquisition systems require large on-board frame buffers. The K4A8G165WC-BCPB's x16 organization lets a single chip provide a 16-bit DDR4 interface, simplifying FPGA bank placement versus two x8 devices. At DDR4-2133, one chip delivers roughly 4.2 GB/s of peak bandwidth, sufficient for multi-stream video line buffering. Enable the memory controller's ZQ calibration and train at board bring-up; use the data mask function for partial frame writes to avoid read-modify-write overhead on video payloads.
推薦
Set-Top Boxes and Smart Home Gateways
IPTV set-top boxes and home gateways run rich UI stacks and video pipelines that need gigabyte-class soldered memory. The K4A8G165WC-BCPB's 8 Gb density in one FBGA saves board area versus multiple lower-density chips, and its 1.2 V rail aligns with energy-efficiency targets for always-on consumer equipment. DDR4-2133 bandwidth supports simultaneous 4K decode buffering and network traffic. The device's auto precharge function improves page-hit efficiency for streaming access patterns, and RoHS compliance keeps consumer certification straightforward.
推薦
Test and Measurement Instrumentation
Oscilloscope, logic analyzer, and data-recorder front ends capture long acquisition records that overflow on-chip SRAM, so soldered DDR4 is used for deep capture memory. The K4A8G165WC-BCPB offers 8 Gb per chip at DDR4-2133, enabling multi-gigasample streaming architectures with sequential burst writes. ZQ calibration keeps output impedance accurate over temperature, protecting eye margins on long PCB traces typical of instrument backplanes. The asynchronous reset input allows the host to recover the memory subsystem without a full power cycle between captures.
推薦
Automotive-Adjacent Embedded Gateways (Industrial Grade)
Telematics gateways, fleet recorders, and off-highway equipment controllers use industrial-grade soldered DDR4 rather than AEC-Q100 memory. The K4A8G165WC-BCPB suits these designs where 0C to +95C operation is acceptable, providing 8 Gb for map, log, and communication buffering at DDR4-2133. The 96-ball FBGA's soldered attachment resists shock and vibration better than connectors, and the low 1.2 V rail reduces total power draw in battery-backed or energy-harvesting nodes. Verify the wider automotive temperature requirement before using it inside the passenger compartment ECU domain.
推薦
推薦產品摘要
工程參考資料，適用於 K4A8G165WC-BCPB — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A8G165WB-BCPB | K4A8G165WC-BCTD | K4A8G165WC-BCRC | K4A8G165WB-BCWE |
|---|---|---|---|---|---|
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V (1.14-1.26 V) | 1.2 V (1.14-1.26 V) | 1.2 V (1.14-1.26 V) | 1.2 V (1.14-1.26 V) | 1.2 V (1.14-1.26 V) |
| Die Generation | C-die | B-die | C-die | C-die | B-die |
| Speed Grade (suffix) | PB (DDR4-2133 class) | PB (DDR4-2133 class) | TD (higher grade) | RC (lower grade) | WE (higher grade) |
主要差異化特點
- Newer C-die silicon generation (對比K4A8G165WB-BCPB)
- Lowest quoted price among verified family members (對比K4A8G165WC-BCTD)
- x16 organization halves component count (對比K4A8G085WC-BCPB)
設計說明
Route DDR4 address/command/control as a fly-by topology with length-matched traces and tune write leveling and read training in the controller. The K4A8G165WC-BCPB's dynamic ODT and ZQ calibration help maintain eye margins at DDR4-2133, but you must still control trace impedance (40-50 ohm single-ended) and keep data-group skew within controller specifications. Run full DRAM training at board bring-up for every PCB stackup revision, since impedance changes shift the trained delays.
The device operates at 1.2 V nominal (1.14 V to 1.26 V) with separate VDD, VDDQ, and VPP rails per JEDEC DDR4 practice. Estimated: at DDR4-2133 with moderate utilization, a single 8 Gb x16 chip draws on the order of a few hundred milliwatts; use a dedicated buck regulator such as the TPS54218 for VDD/VDDQ and a proper VTT termination supply with bulk capacitance at the package. Keep rail ripple below the JEDEC DDR4 tolerance band to avoid refresh errors.
The most common substitution error is mixing organizations: the K4A8G085WC series (x8) uses a 78-ball FBGA that is physically incompatible with the 96-ball footprint of this x16 part. Also verify the speed-grade suffix (PB/RC/TD/WE) against your controller's validated timing table before BOM swaps, and do not assume B-die (WB family) timing settings carry over unchanged to C-die (WC family) silicon even when the footprint is identical.
Place the 96-ball FBGA within 50 mm of the controller where possible, keep the DRAM on a solid reference plane, and reserve space for series termination resistors on address/command nets. For multi-chip topologies, use fly-by routing of address/command with daisy-chained ODT, and length-match data groups per byte lane. Provide thermal relief via the PCB since FBGA packages dissipate heat through the ball field.
合規資訊
RoHS compliance and lead-free FBGA package per distributor listings (LCSC, JLCPCB). REACH, halogen-free, and conflict-minerals declarations should be confirmed via Samsung's official environmental documentation.
