K4AAG085WM-BCWE vs MT40A2G8AG-062E 比較
詳細並排比較 K4AAG085WM-BCWE 由 Samsung Electronics 與 MT40A2G8AG-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG085WM-BCWE | MT40A2G8AG-062E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 組織 | 2G x 8 | 2G x 8 |
| 資料速率 | 3200 Mbps (DDR4-3200) | — |
| 供應電壓 | 1.2 V | — |
| 工作溫度 | 0C to +85C | — |
| 封裝 | 78FBGA | 78-FBGA (7.5 x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (JEDEC-standard) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| Speed | — | DDR4-3200 (3200 MT/s) |
| Clock Frequency | — | 1600 MHz |
| Access Time (Clock Cycle Time) | — | 0.625 ns (tCK) |
| CAS 延遲 | — | CL22 (DDR4-3200) |
| Access Time | — | 19 ns |
| Supply Voltage VDD | — | 1.2 V |
| I/O Interface | — | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | — | 2.5 V |
| Number of Banks | — | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | — | -40C to +95C (per Micron grade table) |
| Die Revision | — | AG (current generation) |