K4AAG165WA-BCTD vs K4AAG165WM-BCRC 比較

詳細並排比較 K4AAG165WA-BCTD 由 Samsung Electronics 與 K4AAG165WM-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K4AAG165WA-BCTD K4AAG165WA-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung

K4AAG165WA-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung

K4AAG165WA-BCTD ✓ 啟用中
Samsung Electronics
K4AAG165WM-BCRC K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung

K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung

K4AAG165WM-BCRC ✓ 啟用中

規格比較

參數 K4AAG165WA-BCTD K4AAG165WM-BCRC
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
記憶體容量 16 Gb —
Memory Organization 1G x 16 —
資料速率 2666 Mbps 3200 Mbps
供應電壓 1.2 V —
介面 Synchronous, DDR4 DDR4 (SSTL-12)
工作溫度 0C to +85C [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC]
封裝 96-FBGA 96-ball FBGA
安裝類型 Surface Mount Surface Mount
Memory Format Volatile (DRAM) —
Bank Architecture DDR4 bank-group architecture —
Technology Family DDR4 SDRAM (Samsung K4AAG165WA series) —
Application Class Computing, embedded, consumer main memory —
Package Family FBGA -> fine-pitch BGA -> surface mount —
Temperature Grade Commercial (0C to +85C) —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Density — 16 Gb
組織 — 1G x 16
Supply Voltage (VDD) — 1.2 V
Auto Precharge — Yes
Asynchronous Reset — Yes
CRC Function — Yes
ZQ Calibration — Yes
Dynamic On-Chip Termination — Yes
Data Mask Function — Yes
CAS Latency (CL) — [DATA_NEEDED: CAS latency at 3200 Mbps]

資料表與資源

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