K4B4G1646D-BCK00 vs H5TC4G63AFR-PBJ 比較
詳細並排比較 K4B4G1646D-BCK00 由 Samsung Electronics 與 H5TC4G63AFR-PBJ 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4B4G1646D-BCK00 | H5TC4G63AFR-PBJ |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Density | 4 Gb | — |
| 組織 | 256M x 16 | — |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| 資料速率 | 1600 Mbps/pin | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] |
| 供應電壓 | 1.35V (1.283V to 1.45V) | 1.35 V |
| I/O Voltage | 1.35V | — |
| 封裝 | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| 工作溫度 | 0°C to 95°C (Tcase) | — |
| Number of Banks | 8 | — |
| CAS 延遲 | 11 (at 1600 Mbps) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| 記憶體容量 | — | 4 Gb (256M x 16) |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Refresh Cycles | — | 8192 |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Access Time | — | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | — | Yes |
| Data Mask | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS Status] |