K9HCG08U1M vs K9XXG08UXM 比較
詳細並排比較 K9HCG08U1M 由 Samsung Electronics 與 K9XXG08UXM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9HCG08U1M | K9XXG08UXM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | Obsolete |
| Memory Technology | MLC NAND Flash | — |
| Total Capacity | 64 Gbit | — |
| 組織 | 8G x 8 | — |
| 資料匯流排寬度 | 8 bit | — |
| 介面類型 | Asynchronous NAND (multiplexed address/data/command) | — |
| 供應電壓 | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Read Time (tR) | [DATA_NEEDED: read time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| 封裝 | TSOP-48 (PDSO48) | 48-pin TSOP |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40C to +105C (TA) | [DATA_NEEDED: Operating Temperature] |
| Ready/Busy Output | Yes (R/B#) | — |
| Die Technology | Samsung E-die (per datasheet family) | — |
| Full Ordering Code | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 | — |
| 記憶體容量 | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS Status] |