K9HCG08U1M vs K9XXG08UXM Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9HCG08U1M sa pamamagitan ng Samsung Electronics at K9XXG08UXM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
K9HCG08U1M ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K9HCG08U1M | K9XXG08UXM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Obsolete |
| Memory Technology | MLC NAND Flash | — |
| Total Capacity | 64 Gbit | — |
| Organisasyon | 8G x 8 | — |
| Width ng Data Bus | 8 bit | — |
| Uri ng Interface | Asynchronous NAND (multiplexed address/data/command) | — |
| Volte ng Pagbibigay | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Read Time (tR) | [DATA_NEEDED: read time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Packhaging | TSOP-48 (PDSO48) | 48-pin TSOP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +105C (TA) | [DATA_NEEDED: Operating Temperature] |
| Ready/Busy Output | Yes (R/B#) | — |
| Die Technology | Samsung E-die (per datasheet family) | — |
| Full Ordering Code | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 | — |
| Laki ng Memory | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS Status] |