LM358DR vs NCV2904DR2G 比較

詳細並排比較 LM358DR 由 Texas Instruments 與 NCV2904DR2G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 LM358DR NCV2904DR2G
品牌 Texas Instruments onsemi
類別 Amplifier ICs Amplifier ICs
生命週期狀態 啟用中 啟用中
Amplifier Type General Purpose Operational Amplifier General Purpose Operational Amplifier
Number of Circuits 2 2
Gain Bandwidth Product 700 kHz —
Slew Rate 0.3 V/µs —
Supply Voltage (Single) 3 V to 32 V —
Supply Voltage (Dual) ±1.5 V to ±16 V —
Supply Current (per channel) 0.7 mA (typ) —
Input Offset Voltage 2 mV (typ), 7 mV (max) —
Common-Mode Input Range Extends to ground (V-) —
Output Current 20 mA (typ, short-circuit protected) —
Minimum Load Resistance 2 kΩ —
工作溫度 0°C to +70°C —
封裝 SOIC-8 (D) SOIC-8 (Case 751, D suffix)
安裝類型 Surface Mount Surface Mount
Internal Compensation Yes (unity-gain stable) —
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
Supply Voltage (Single Supply) — 3.0 V to 26 V
Supply Voltage (Split Supply) — +/-1.5 V to +/-13 V
Common Mode Input Range — Extends to ground/VEE
Output — Short circuit protected
Input Stage — True differential input
Compensation — Internally compensated
ESD Protection — ESD clamps on inputs
Input Bias Current — Low input bias current
Power Drain — Low power drain
Qualification — NCV automotive grade
工作溫度範圍 — [DATA_NEEDED: operating temperature range]

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