M29W160ET70N3F vs M29W160EB70N3F 比較
詳細並排比較 M29W160ET70N3F 由 Micron Technology 與 M29W160EB70N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W160ET70N3F | M29W160EB70N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Parallel NOR Flash | FLASH - NOR |
| 記憶體容量 | 16 Mbit (2 M x 8 / 1 M x 16) | 16 Mbit (2M x8 / 1M x16) |
| Access Time | 70 ns | 70 ns |
| 供應電壓 | 3 V / 3.3 V | — |
| Technology | CMOS | — |
| Boot Block Architecture | Top boot | — |
| Bus Configuration | x8 / x16 selectable | x8 / x16 selectable (BYTE# pin) |
| 封裝 | 48-pin TSOP | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | Automotive (AEC-Q100) | — |
| Qualification | AEC-Q100 qualified | Automotive, AEC-Q100 |
| Packaging | Tape and Reel | Tape & Reel |
| RoHS 狀態 | RoHS-compliant package (F option) | — |
| Programming Interface | Parallel command set | — |
| Number of Terminals | 48 | — |
| 介面 | — | Parallel (Byte/Word-wide) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming Time | — | 10 us per byte/word (typical) |
| Boot Block Position | — | Bottom boot block |
| 封裝 / 外殼 | — | 48-TSOP (0.724 in, 18.40 mm width) |
| Erase Architecture | — | Block erase (boot block + main blocks) |
| Common Flash Interface | — | Yes (CFI compliant) |
| Reset Input | — | RESET# hardware reset pin |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |