M29W160FB70N3E vs M29W160EB80ZA3SE 比較
詳細並排比較 M29W160FB70N3E 由 Micron Technology 與 M29W160EB80ZA3SE 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W160FB70N3E | M29W160EB80ZA3SE |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | FLASH - NOR | NOR Flash (Parallel) |
| 記憶體容量 | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2M x8 / 1M x16) |
| Access Time | 70 ns | 80 ns |
| 介面 | Parallel | Parallel (Byte-wide / Word-wide) |
| Supply Voltage (VCC) | 3.0 V to 3.6 V | — |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Bus Configuration | x8 / x16 selectable (BYTE# pin) | — |
| Architecture | Boot block | — |
| 封裝 / 外殼 | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| Packaging | Tray | Tape & Reel (TR) |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Status Output | Data polling / toggle bit | — |
| Block Protection | Yes (boot block protection) | — |
| 供應電壓 | — | 2.7 V to 3.6 V |
| 組織 | — | 16 Mbit Boot Block, x8/x16 selectable |
| 封裝 | — | 48-TFBGA (6x8 mm, 0.8 mm ball pitch) |
| Qualification | — | AEC-Q100 (automotive grade per datasheets.com listing) |
| Programming Supply | — | Single 3V supply for program, erase and read |
| Technology Family | — | M29W160EB (3rd generation M29W series) |
| Erase Block Architecture | — | Boot block (parameter and main blocks) |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |
| RoHS 狀態 | — | Pb-free (SE suffix) |